Method for preparing diamond-like film by liquid-phase electro-deposition technology

A diamond thin film and electrodeposition technology, applied in the direction of electrolytic inorganic material coating, etc., can solve the problems of low deposition rate and difficult experimental operation, and achieve the effects of low deposition temperature, simple preparation equipment, and expanded selection range

Inactive Publication Date: 2007-05-16
HENAN UNIVERSITY
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these deposition processes need to be carried out at a relatively high voltage (1000-3000V), and there may be discharge during the electrolysis process, which makes the experimental operation more difficult.
[0005] At the same time, Novikov (V.P.Novikov, V.P.Dymont, Appl.Phys.Lett., 70 (1997) 200) and Shevchenko (E.Shevchenko, E.Matiushenkov, D.Kochubey, D.Sviridov, A.Kokorin, A. Kulak, Chem.Commun., (2001) 317) deposit DLC film from the liquid ammonia solution of acetylene and the dimethyl sulfoxide solution of acetylene lithium respectively under the voltage of less than 5V, but these methods need to use liquid ammonia or acetylene Gas, and the deposition rate is low, so it is necessary to find a more gentle way to deposit diamond-like films, avoid the use of dangerous gases, and at the same time can be carried out at a lower voltage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing diamond-like film by liquid-phase electro-deposition technology
  • Method for preparing diamond-like film by liquid-phase electro-deposition technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Example 1. Using high-purity dimethyl sulfoxide as the electrolyte, polished high-purity graphite and substrate silicon as the anode and cathode, the distance between the electrodes is 7mm, the reaction temperature is 50°C, and a 500V high-frequency pulse direct current is applied between the two poles Voltage. Before deposition, the silicon wafer used as the substrate was ultrasonically treated in acetone for 10 minutes to remove surface impurities, and then soaked in hydrofluoric acid solution for 5 minutes to remove surface oxides.

[0018] The preparation device is shown in Figure 1. High-purity graphite 3 is used as the anode, the substrate silicon wafer 4 is the cathode, the 0-3000V high-frequency pulsed DC voltage power supply 2 is the external power supply, and high-purity dimethyl sulfoxide is used as the electrolyte. 7 and the magnetic heating stirrer 6 stir the electrolytic solution and control the temperature of the water bath 9, the thermometer 5 inserted i...

Embodiment 2

[0019] Embodiment 2. In this embodiment, the reaction temperature is 70° C., and a high-frequency pulsed DC voltage of 300 V is applied between the two poles. Others are the same as embodiment 1.

Embodiment 3

[0020] Embodiment 3. In this embodiment, the reaction temperature is 90° C., and a high-frequency pulsed DC voltage of 50 V is applied between the two poles. Others are the same as embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparing method of diamond film through liquid-phase electric sedimenting method in the diamond similar film preparing technical domain, which is characterized by the following: adopting demeso as electrolyte; setting the electrolyzing pressure at 50-500V high-frequency pulse DC pressure; sedimenting at 50-90 Deg C; refluxing vaporized electrolyte to sediment pond through condensing; selecting silica as base before sedimenting; disposing the silica in the acetone through ultrasound; immersing in the fluohydric acid solution; adopting high-purity graphite as anode in the sedimenting course; making disposed silica as cathode with the distance between two electrodes at 7mm; adopting demeso with high-dielectric constant and big dipole distance as electrolyte to prepare the product under lower pressure.

Description

technical field [0001] The invention belongs to the technical field of diamond-like film preparation, and in particular relates to a method for preparing a diamond-like film by liquid-phase electrodeposition. Background technique [0002] Diamond-like Carbon Films (DLC films for short) have a series of characteristics similar to diamond, such as high hardness, low friction coefficient, high resistivity, good biocompatibility, and high transparency from infrared to ultraviolet. It has a good application prospect in the fields of machinery, electronics, medicine, optics, etc. Therefore, the research on it has attracted more and more attention. [0003] The methods for preparing DLC ​​films mainly include physical vapor deposition (PVD) and chemical vapor deposition (CVP), such as ion beam deposition, cathodic arc deposition, sputtering deposition and plasma enhanced chemical vapor deposition, etc., although most of the methods can deposit Films with better quality can be prod...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/08
Inventor 张治军黄丽娜江河清张记升张平余吴志申
Owner HENAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products