Nanometer mesoporous silicon based xerogel hemostatic material and its preparing method and use

一种纳米介孔、止血材料的技术,应用在化学仪器和方法、氧化硅、血液疾病等方向,能够解决覆盖、止血效果欠佳、使用过程复杂、组织热灼伤等问题,达到止血效果好、提高效果、加速愈合的效果
CN1970090AInactive Publication Date: 2007-05-30EAST CHINA UNIV OF SCI & TECH

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
EAST CHINA UNIV OF SCI & TECH
Publication Date
2007-05-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a making method and application of nanometer dielectric-hole silicon based dried gel styptic material, which is characterized by the following: the material possesses nanometer hole (1-50nm) and high specific surface area (100-1400m2 / g), whose chemical composition is adjustable with excellent biological decomposition.
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Description

technical field

[0001] The invention relates to a hemostatic material and its preparation method and application, in particular to a silicon-based xerogel hemostatic material with a nano-mesoporous structure and its preparation method and application. technical background

[0002] Hemorrhage is a complication that can occur in any trauma, and is one of the main causes of threatening human life. At the same time, rapid and effective hemostasis is also an important part of clinical operations and first aid for war wounds. According to incomplete statistics, at present, about 500 tons of various hemostatic drugs are used clinically in my country every year. Therefore, finding effective hemostatic materials suitable for wound healing in various surgical operations and wound healing in field first aid has always been a hot spot of research at home and abroad.

[0003] Traditional wound hemostatic materials are mainly first aid kits, four-head bands, tourniquets and bandages, as...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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