Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal nitride and method for producing metal nitride

A manufacturing method and technology of nitrides, applied in nitrogen compounds, nitrogen-metal/silicon/boron binary compounds, chemical instruments and methods, etc., can solve gallium nitride lattice defects, difficult to obtain high-quality, h-GaN Purity reduction and other problems, to achieve high yield, eliminate the mixing of oxygen, and avoid the effect of residual

Active Publication Date: 2007-07-04
MITSUBISHI RAYON CO LTD
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this method uses heteroepitaxial growth in which the lattice constant and thermal expansion coefficient are different between the substrate and GaN, there is a problem that the resulting GaN is prone to lattice defects, and it is difficult to obtain applicable High quality for blue laser etc.
Also, in this case, a considerable amount of metal components including Ga is contained, so that the purity of h-GaN decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0089] The 6N metal gallium of 1.50g is loaded into the vessel (volume is 13cm 3 ). At this time, the ratio of the volume of the raw material metal to the volume of the container is 0.05 or less; the ratio of the area of ​​the bottom and wall of the container contacting the raw material metal to the total area of ​​the bottom and wall of the container is 0.05 or less. In addition, at this time, the metal gallium filled in the vessel can contact the gas with an area of ​​1 cm 2 / g or more. Quickly install the container in the center of a container consisting of a horizontally placed cylindrical quartz tube with an inner diameter of 32mm and a length of 700mm, circulate high-purity nitrogen (5N) at a flow rate of 200Nml / min, and clean the inside of the container and the piping components Replace fully.

[0090] Then, while passing high-purity (5N) nitrogen at 50Nml / min, use the equipped heater to raise the temperature to 300°C, and change the nitrogen gas to a mixture of 5N a...

Embodiment 2

[0094] Fill 4.00g of 6N gallium metal into a cylindrical vessel made of pBN with a length of 100mm and a diameter of 30mm (volume is 70cm 3 ). At this time, the ratio of the volume of the raw material metal to the volume of the vessel is 0.02 or less; the ratio of the area of ​​the bottom and wall of the vessel contacting the raw metal to the total area of ​​the bottom and walls of the vessel is 0.02 or less. In addition, at this time, the metal gallium filled in the vessel can contact the gas with an area of ​​0.7cm 2 / g or more. Then, the flow rate of the mixed gas is set to 5N ammonia 500Nml / min and 5N nitrogen 50Nml / min; relative to the total volume of the raw material metal at this time, the volume per second of the supplied ammonia gas is more than 12 times; the raw material metal Except that the gas flow rate near the upper side was set to 1 cm / s or more, gallium nitride polycrystalline powder crushed to a size of 100 mesh or less was obtained in the same manner as in...

Embodiment 3

[0097] 2.00g of 6N gallium metal is filled into a graphite vessel (capacity of 12cm 3 ). At this time, the ratio of the volume of the raw material metal to the volume of the vessel is 0.03 or less; the ratio of the area of ​​the bottom and wall of the vessel contacting the raw metal to the total area of ​​the bottom and walls of the vessel is 0.03 or less. In addition, at this time, the gallium metal filled in the vessel can contact the gas with an area of ​​0.9 cm 2 / g or more. Then, the flow rate of the mixed gas is set to 5N ammonia 500Nml / min and 5N nitrogen 50Nml / min; relative to the total volume of the raw material metal at this time, the volume per second of the supplied ammonia gas is more than 25 times; the raw material metal Except that the gas flow rate near the upper side was set to 1 cm / s or more, gallium nitride polycrystalline powder pulverized to a size of 100 mesh or less was obtained in the same manner as in Example 1. In addition, if calculated based on t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
specific surface areaaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a process for producing efficiently high-quality metal nitrides (such as gallium nitride) which little contain impurities, particularly, a process for the production of metal nitrides which is characterized by using a container made of a nonoxide material. The employment of a nonoxide material as the material of the container to come into contact with a starting metal or a product metal nitride makes it possible to inhibit the reaction of the container with the starting metal or the product metal nitride, the adhesion of the metal or the metal nitride to the container, and the contamination of the metal nitride with oxygen resulting from the material of the container, thus permitting the production of highly crystalline high-quality metal nitrides. Further, the feeding of a nitrogen source gas in an amount larger than a certain level at a flow velocity higher than a certain level makes it possible to convert a starting metal into a nitride at an extremely high degree of conversion, thus enabling the production of a metal nitride having a theoretical metal / nitrogen ratio in a high yield with little unreacted starting metal. The obtained metal nitrides are little contaminated with oxygen and have theoretical metal / nitrogen ratios, thus being useful as the raw material for bulk crystal growth.

Description

technical field [0001] This invention relates to metal nitrides. Specifically, the present invention relates to nitrides of Group IIIA metal elements of the periodic table represented by gallium nitride and a method for producing the metal nitrides. Background technique [0002] Gallium Nitride (GaN) can be used as a substance suitable for electronic devices such as light emitting diodes or laser diodes. The most common method for producing gallium nitride crystals is a method of performing vapor phase epitaxy growth by MOCVD (Metal Organic Chemical Vapor Deposition) on a substrate such as sapphire or silicon carbide. However, since this method uses heteroepitaxial growth in which the lattice constant and thermal expansion coefficient are different between the substrate and GaN, there is a problem that the resulting GaN is prone to lattice defects, and it is difficult to obtain applicable High quality for blue laser etc. [0003] Therefore, in recent years, there has been...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/06H01L33/00C30B29/38H01S5/323
CPCC01P2006/12C01P2006/63C09K11/621C01P2006/64C01P2002/76C30B29/403C30B29/406C01P2006/62C01P2002/74C30B7/00C01B21/0632C01P2006/60C01P2004/62C30B28/06C01P2006/80C01P2004/61
Inventor 辻秀人
Owner MITSUBISHI RAYON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products