Metal complex solution, photosensitive metal complex solution and method for forming metallic oxide films

a technology of complex solution and metal, applied in the direction of chemical vapor deposition coating, solid-state device, group 3/13 element organic compounds, etc., can solve the problems of insufficient quality of metallic oxide films, complex and expensive film deposition system used in this process, disadvantageous production cost and mass-productivity of conventional sputtering process, etc., to achieve low electrical resistance and high transparency

Inactive Publication Date: 2002-07-04
DAI NIPPON PRINTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution enables the formation of high-quality, low-resistance, and transparent metallic oxide films, specifically ITO films, with enhanced electrical conductivity and transparency, comparable to those produced by vacuum deposition methods, while simplifying the process and reducing costs.

Problems solved by technology

The above-described conventional sputtering process is disadvantageous from production cost and mass-productivity because the film deposition system for use in this process is complicated and also expensive.
However, those metallic oxide films, especially transparent conducting films which are formed by these methods of application are still insufficient in their qualities.
Namely, there are such practical problems that the qualities of the metallic oxide films are unsatisfactory and that, since the transparent conducting films formed have high electrical resistance, they cannot be used for electrodes or the like to be used for display elements, etc. when electrical conductivity is taken into consideration.
The above-described conventional method for forming patterned metallic oxide films or transparent conducting films is a complicated and long process consisting of two film-forming steps of forming a metallic oxide film or transparent conducting film and a resist layer, one step of exposure, and three wet chemical conversion treatment steps of developing the resist layer, removing the same, and etching the metallic oxide film or transparent conducting film.
This method is thus disadvantageous from production cost and non-defective rate.

Method used

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  • Metal complex solution, photosensitive metal complex solution and method for forming metallic oxide films
  • Metal complex solution, photosensitive metal complex solution and method for forming metallic oxide films

Examples

Experimental program
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Effect test

example 1

[0057] 1. Preparation of In--Sn Complex Solution

[0058] A 1,000 ml three-necked flask equipped with a mechanical stirrer, a Dimroth condenser, a thermometer, and silicone rubber stoppers was prepared. The flask was unstoppered, and 3.2 mol of acetic acid was placed in the flask.

[0059] 0.04 mol of indium oxide (purity: 99.999%) was added to the flask with stirring the acetic acid in the flask, and the temperature of the mixture was raised, with stirring, to 100.degree. C. over a period of 30 minutes by using an oil bath. The mixture was heated under reflux at the temperature for 5 hours, and then cooled to room temperature.

[0060] The solution contained in the above flask was transferred to a 500 ml egg-plant type flask, and concentrated to 50.1 g by using a rotary evaporator at a temperature of 70.degree. C. under a pressure of 30 mmHg.

[0061] This concentrate was transferred to a 1,000 ml three-necked flask equipped with a mechanical stirrer, a Dimroth condenser, a thermometer and sil...

example 2

[0069] A photosensitive In--Sn complex solution of the present invention was prepared in the same manner as in Example 1 except that 0.08 mol of triethanolamine used in Example 1 was replaced with 0.24 mol of acetylacetone. By the use of this complex solution, the substrate with a finely-patterned transparent conducting film was obtained in the same manner as in Example 1.

example 3

[0070] A photosensitive In--Sn complex solution of the present invention was prepared in the same manner as in Example 1 except that 0.08 mol of triethanolamine used in Example 1 was replaced with 0.16 mol of diethanolamine. By the use of this complex solution, the substrate with a finely-patterned transparent conducting film was obtained in the same manner as in Example 1.

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Abstract

A metal complex solution comprising an organic solvent, and a complex composed of an organic acid salt of at least one metal and an organic amine or organic ketone compound, dissolved in the organic solvent; a photosensitive metal complex solution comprising the metal complex solution, and a photosensitive resin added to the solution; and a method for forming metallic oxide films, using these solutions.

Description

[0001] 1. Field of the Invention[0002] The present invention relates to a metal complex solution, to a photosensitive metal complex solution, and to a method for forming metallic oxide films (including patterned metallic oxide films).[0003] 2. Background Art[0004] Metallic oxides have attracted attention from old times due to their thermal, optical, electrical, magnetic and mechanical properties, and conventionally been applied to various uses in the field of industry. Especially in the field of recent electronic materials, transparent conducting films are used as antistatic materials, materials for heat ray cut-off filters, materials for ultraviolet light cut-off filters, magnetic-wave-shielding materials, materials for transparent electrodes to be used for liquid crystal displays, plasma displays, etc., and materials for producing deicing heaters to be used for window glasses, etc. Further, a variety of metallic oxide films are utilized for those uses which require neither transpa...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): C04B35/26G03F7/004C04B35/457C04B35/472C07F5/00C07F7/22G02F1/1343G03F7/40H01F41/24H01L31/18H01L51/52
CPCC04B35/2658C04B35/457C04B35/472C04B35/6264C04B2235/3232C04B2235/3272C04B2235/3284C04B2235/3286C04B2235/3293C04B2235/3296C04B2235/441C04B2235/449C04B2235/768C04B2235/96C04B2235/9653G02F1/13439G03F7/0047H01F41/24H01L31/1884H01L51/5206Y02E10/50C03C17/27C03C2217/212C03C2217/217C03C2217/231C03C2217/24C03C2217/948H10K50/81
InventorMITAMURA, SATOSHI
OwnerDAI NIPPON PRINTING CO LTD