Method of manufacture of damascene reticle

Abstract

A method for manufacturing an optical projection reticle employs a damascene process. First feature recesses are etched into a projection reticle mask plate which is transmissive or transparent. Then feature recesses are tilled with a radiation transmissivity modifying material comprising a partially transmissive material and / or a radiation absorber for absorbing actinic radiation. Sacrificial materials may be added to the recess temporarily prior to filling the recess to provide gaps juxtaposed with the material filling the recess. Thereafter, the sacrificial materials are removed. Then the projection mask is planarized leaving feature recesses filled with transmissivity modifying material, and any gaps desired. The projection mask is planarized while retained in a fixture holding it in place during polishing with a polishing tool and a slurry.

Description

BACKGROUND OF THE INVENTION[0001]The present invention relates to methods of manufacture of photolithographic reticles, i.e. masks, and reticles produced thereby. More particularly this invention relates to methods for fabrication of reticles for exposure of microelectronic integrated circuits and other micro-scale devices and to the reticles produced thereby.[0002]During the process of manufacturing of microelectronic integrated circuits on a substrate comprising a workpiece such as a semiconductor wafer or the like, layers of material on the workpiece are patterned photolithographically. A layer of a radiation sensitive resist (hereinafter resist) is deposited on the workpiece. The resist (e.g. photoresist) comprises a radiation sensitive material which can be exposed to a master image projected as patterns of radiation, e.g. light, ultraviolet light, x-ray, electron beam, or other forms of radiation. The resist is later exposed using an exposure tool, and a reticle. The reticle c...

AI Technical Summary

Benefits of technology

[0028]This invention leaves the top surface of a reticle which is completely planar, improving the imaging performance by reducing the scattering of light between features. Such a fully planar surface also allows the sealing of the top surface of the reticle without adverse effects, eliminating growth of defects on the features of the reticle.

[0029]One aspect of this invention allows the difficult process of absorber etching to be replaced by a silicon dioxide etch into the quartz of a COG plate to form an etched pattern, followed by the process of filling the etched pattern with an actinic absorber.

[0042]Preferably, a liner is juxtaposed with the radiation transmissivity modifying material as a lens for focusing the exposure rays at the edge of the pattern to increase signal to noise levels, whereby scattering from the projected pattern is minimized.

Problems solved by technology

There is a serious problem with the process of etching through the chrome of a COG reticle mask plate down to the quartz therebelow which is that the etching process for the chrome also consumes the photoresist mask very quickly which forces certain restrictions in the mask making process (e.g. resist thickness.)

There are other serious problems with etched COG reticles.

One such problem with etched COG reticles is that Electro-Static Discharge (ESD) can cause damage to the metal (chrome) pattern on a substrate composed of quartz as the insulating material.

The problem is that unwanted Electro-Static Discharge (ESD), involving rapid dissipation of electric charge in a short amount of time, often causes delamination of the chrome pattern from the quartz substrate.

That renders the mask defective so that it is not useful for the fabrication of devices on semiconductor substrates.

Another serious problem with COG reticles is that they grow defects over the lifetime of the mask which limits the useful lifetime of such reticles and forces regular cleaning.

The AltPSM mask has limitations in that the termination of features can be difficult and a second mask called a block out has to be used in conjunction therewith to terminate the features that are desired on the substrate.

However the cost of fabrication of a mask set has increased dramatically by introducing those extra processing steps required for AltPSM reticle processing.

This non-planar outer surface presents a problem for the integrated circuit manufacturer as a non-planar surface can prevent proper focusing of the photolithography apparatus.

Images