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Conductive polymer composition, coated article having antistatic film formed from the composition, and patterning process using the composition

a technology of antistatic film and composition, which is applied in the direction of non-metal conductors, instruments, conductors, etc., can solve the problems of not being able to prevent damage of resist film, and thin thickness of resist film, etc., to achieve good pattern profile, high sensitivity, and high resolution

Active Publication Date: 2017-01-31
SHIN ETSU CHEM CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The composition achieves high sensitivity, resolution, and pattern profile with improved wetting properties and conductivity, preventing electrification and maintaining resist film integrity during the lithography process.

Problems solved by technology

However, a method described in Patent Document 1 requires further purification of a conductive polymer in an organic solvent, and therefore is not preferred in terms of process.
Further, the thickness of a resist film may be slightly thin, and therefore is not sufficient to prevent damage of the resist film.
However, depending on the kind of surfactant to be used, the thickness of a resist film may be slightly thin, and therefore is not sufficient to prevent damage of the resist film.

Method used

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  • Conductive polymer composition, coated article having antistatic film formed from the composition, and patterning process using the composition
  • Conductive polymer composition, coated article having antistatic film formed from the composition, and patterning process using the composition
  • Conductive polymer composition, coated article having antistatic film formed from the composition, and patterning process using the composition

Examples

Experimental program
Comparison scheme
Effect test

production example 1

Preparation of Polystyrene Sulfonic Acid

[0119]206 g of sodium styrene sulfonate was dissolved in 1,000 mL of ion-exchanged water. An oxidizing agent solution in which 1.14 g of ammonium persulfate was dissolved in 10 mL of water in advance was added dropwise at 80° C. with stirring for 20 minutes, and the solution was stirred for 2 hours. To the obtained sodium styrene sulfonate-containing solution, 1,000 mL of sulfuric acid diluted to 10% by mass and 10,000 mL of ion-exchanged water were added, and about 10,000 mL of polystyrene sulfonic acid-containing solution was removed by ultrafiltration. To the residue, 10,000 mL of ion-exchanged water was added, and about 10,000 mL of the solution was removed by ultrafiltration. This ultrafiltration operation was repeated 3 times.

[0120]To the obtained filtrate, about 10,000 mL of ion-exchanged water was added, and about 10,000 mL of the solution was removed by ultrafiltration. This ultrafiltration operation was repeated 3 times.

[0121]Water i...

production example 2

Preparation of Dispersion Liquid of poly(3,4-ethylenedioxythiophene) Doped with polystyrene sulfonic Acid

[0127]14.2 g of 3,4-ethylenedioxythiophene and a solution of 36.7 g of polystyrene sulfonic acid obtained in Production Example 1 in 2,000 mL of ion-exchanged water were mixed at 20° C.

[0128]The obtained mixed solution was held at 20° C. 29.64 g of ammonium persulfate dissolved in 200 mL of ion-exchanged water and an oxidation catalyst solution of 8.0 g of ferric sulfate were slowly added with stirring, and stirred for 3 hours, to cause a reaction.

[0129]To the obtained reaction solution, 2,000 mL of ion-exchanged water was added, and about 2,000 mL of the solution was removed by ultrafiltration. This operation was repeated 3 times.

[0130]To the treatment liquid after the ultrafiltration, 200 mL of sulfuric acid that was diluted to 10% by mass and 2,000 mL of ion-exchanged water were added, and about 2,000 mL of the treatment liquid was removed by ultrafiltration. To this liquid, 2...

production example 3

Synthesis of polysulfoethyl methacrylate

[0132]216 g of sodium sulfoethyl methacrylate was dissolved in 1,000 mL of ion-exchanged water. An oxidizing agent solution in which 1.14 g of ammonium persulfate was dissolved in 10 mL of water in advance was added dropwise at 80° C. with stirring for 20 minutes, and the solution was stirred for 12 hours. To the obtained polysulfoethyl methacrylate-containing solution, 1,000 mL of sulfuric acid diluted to 10% by mass and 10,000 mL of ion-exchanged water were added, and about 10,000 mL of polystyrene sulfonic acid-containing solution was removed by ultrafiltration. To the residue, 10,000 mL of ion-exchanged water was added, and about 10,000 mL of the solution was removed by ultrafiltration. This ultrafiltration operation was repeated 3 times.

[0133]To the obtained filtrate, about 10,000 mL of ion-exchanged water was added, and about 10,000 mL of the solution was removed by ultrafiltration. This ultrafiltration operation was repeated 3 times. Wa...

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Abstract

The present invention is a conductive polymer composition containing a π-conjugated conductive polymer, a polyanion, and a gemini surfactant. There can be provided a conductive polymer composition that has excellent antistatic performance and excellent application properties, does not adversely affect a resist, and can be suitably used in lithography using electron beam or the like.

Description

BACKGROUND OF THE INVENTION[0001]Field of the Invention[0002]The present invention relates to a conductive polymer composition containing a π-conjugated conductive polymer, a coated article using the same, and a patterning process. In particular, the present invention relates to a conductive polymer composition that is suitably used for prevention of electrification of a resist in lithography using ultraviolet light, electron beam, or the like, an article having an antistatic film formed by using the same, and a patterning process using the composition.[0003]Description of the Related Art[0004]Conventionally, in a process of producing a semiconductor device such as IC and LSI, microprocessing by a lithography process using a photoresist has been carried out. This is a method of etching a substrate using as a mask a resist pattern that is obtained by a development treatment using a solvent or the like, the development treatment in which light irradiation induces bridging or a decompo...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G03F7/11H01B1/12G03F7/20G03F7/09C08K5/16C08K5/20
CPCH01B1/127C08K5/20G03F7/093G03F7/20G03F7/2059G03F7/2061C08K2201/017
Inventor SAWAI, TOSHIYANAGASAWA, TAKAYUKIWATANABE, SATOSHIMASUNAGA, KEIICHI
Owner SHIN ETSU CHEM CO LTD