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50results about How to "Improved CDU" patented technology

Resist composition and patterning process

A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

ActiveUS20170369616A1Highly effective for suppressing acid diffusionHigh sensitivityLaser detailsOrganic chemistryResistSulfonium
A resist composition comprising a base polymer and a sulfonium or iodonium salt of iodized benzoyloxy-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

ActiveUS20180039173A1Highly effective for suppressing acid diffusionHigh sensitivitySulfonic acids salts preparationPhotomechanical coating apparatusResistSulfonium
A resist composition comprising a base polymer and a sulfonium or iodonium salt of iodinated phenoxy or iodinated phenylalkoxy-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating fluorobenzenesulfonic acid bonded to iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a sulfonium or iodonium salt of brominated benzene-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition contains a polymer-bound acid generator, specifically a polymer comprising recurring units derived from a sulfonium or iodonium salt having a polymerizable unsaturated bond and containing iodine in the linker between the polymerizable unsaturated bond and a fluorosulfonic acid. The resist composition offers a high sensitivity and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Sulfonium salt, polymer, resist composition, and patterning process

ActiveUS20190033716A1Satisfactory profileImprove CDUOrganic chemistryPhotosensitive material processingResistChemistry
A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.
Owner:SHIN ETSU CHEM CO LTD

Monomer, polymer, resist composition, and patterning process

A monomer having formula (A) is provided. RA is H, methyl or trifluoromethyl, X1 is a single bond, ether, ester or amide bond, Ra is a C1-C20 monovalent hydrocarbon group, Rb is H or an acid labile group, X is halogen, n is an integer of 1 to 4, m is an integer of 0 to 3, and 1≤n+m≤4. A resist composition comprising a polymer derived from the monomer has a high sensitivity to high-energy radiation, especially EUV.
Owner:SHIN ETSU CHEM CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Monomer, polymer, resist composition, and patterning process

A monomer having formula (A) is provided. RA is H, methyl or trifluoromethyl, X1 is a single bond, ether, ester or amide bond, Ra is a C1-C20 monovalent hydrocarbon group, Rb is H or an acid labile group, X is halogen, n is an integer of 1 to 4, m is an integer of 0 to 3, and 1≤n+m≤4. A resist composition comprising a polymer derived from the monomer has a high sensitivity to high-energy radiation, especially EUV.
Owner:SHIN ETSU CHEM IND CO LTD

Lithographic apparatus and device manufacturing method

ActiveUS7259829B2CDU for a given substrate can be improvedImproved CDUPhotomechanical apparatusPhotographic printingEngineeringCritical dimension
A lithographic apparatus is provided that uses an array of individually controllable elements to pattern the beam of radiation. The critical dimension uniformity of a substrate patterned using the apparatus is improved by adjusting the pattern data provided to the array of individually controllable elements to compensate for process variation.
Owner:ASML NETHERLANDS BV +1

Resist composition and patterning process

A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating a brominated benzene-containing sulfonic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

ActiveUS20210033970A1Suppressing acid diffusionHigh ability to control acid diffusionPhotosensitive material processingCoatingsPolymer scienceEther
A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbylene group which may contain an ester bond or ether bond and a carboxylate anion having an iodized or brominated hydrocarbyl group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating fluorobenzenesulfonic acid bonded to iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and an acid generator containing a sulfonium salt which is structured such that an iodized or brominated hydrocarbyl group (exclusive of iodized or brominated aromatic ring) is bonded to a benzene ring via an ester bond-containing group offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a quencher containing a sulfonium salt having an iodized benzene ring offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a compound containing an iodized benzene ring and an aromatic ring-containing group having a phenolic hydroxyl group is improved in sensitivity, LWR and CDU.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a quencher in the form of an ammonium salt compound having an iodized aromatic ring and a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a quencher in the form of a salt of a cyclic ammonium cation with a carboxylate, sulfonamide, halogenated phenoxide or halide anion offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition contains a polymer-bound acid generator, specifically a polymer comprising recurring units derived from a sulfonium or iodonium salt having a polymerizable unsaturated bond and containing iodine in the linker between the polymerizable unsaturated bond and a fluorosulfonic acid. The resist composition offers a high sensitivity and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

ActiveUS20210048748A1Suppressing acid diffusionHigh ability to control acid diffusionPhotomechanical exposure apparatusPhotosensitive material processingPolymer sciencePhenol
A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbylene group and an anion derived from an iodized or brominated phenol offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring and a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring and a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition is provided comprising a base polymer containing an iodized polymer, and an acid generator containing a sulfonium salt and / or iodonium salt of iodized benzene ring-containing fluorosulfonic acid. When processed by lithography, the resist composition exhibits a high sensitivity, low LWR and improved CDU independent of whether it is of positive tone or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

ActiveUS20200050105A1Suppressing acid diffusionHigh ability to control acid diffusionOrganic chemistryPhotomechanical exposure apparatusPolymer chemistryPhotochemistry
A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring bonded to the nitrogen atom via a divalent hydrocarbon group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a compound containing an iodized benzene ring and an aromatic ring-containing group having a phenolic hydroxyl group is improved in sensitivity, LWR and CDU.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring bonded to the nitrogen atom via a divalent hydrocarbon group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD

Resist composition and patterning process

A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a divalent hydrocarbon group and a carboxylate, fluorine-free sulfonamide, sulfonamide or halide anion offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
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