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Method for preparing proton crystal

A photonic crystal and single crystal technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of low efficiency and high production cost, achieve the effects of less process steps, save resources, and improve production efficiency

Inactive Publication Date: 2008-06-18
INST OF MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the method for preparing photonic crystals is mainly traditional EBL, which has high production cost and low efficiency. In addition, factors that will affect the environment will also occur during the photolithography process: (1) Waste water: including fluorine-containing waste water, ammonia-containing waste water Wastewater, acid-base wastewater, CMP wastewater; (2) waste gas: including acid waste gas, alkaline waste gas, organic waste gas and process tail gas; (3) solid waste and waste liquid: including waste water treatment sludge, photoresist waste liquid, organic Solvent waste liquid, waste acid, etc.

Method used

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Examples

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Effect test

Embodiment 1

[0020] Example 1 Preparation of ZnO two-dimensional photonic crystal

[0021] Specific steps are as follows:

[0022] 1) First, the preparation of single-layer colloidal microspheres: the particle size of the colloidal microspheres used is 90nm-10μm, and the substrate used is a silicon wafer or a sapphire substrate with a ZnO single crystal substrate;

[0023] Method 1 (spin coating method) prepare colloidal microsphere aqueous solution (0.5% to 20% by volume) and methanol in an appropriate volume ratio (1:1 to 20), then drop this solution on the substrate, At a suitable rotating speed (100-3000 rpm), a regularly arranged single-layer colloidal microsphere film can be produced; or

[0024] Method 2 (self-assembly method) prepare colloidal microsphere aqueous solution (volume percent concentration 0.5%~20%) and ethanol by appropriate volume ratio (1: 1~20), then add the solution dropwise in the container filled with high-purity water, A single layer of colloidal microspheres ...

Embodiment 2

[0034] Example 2 Preparation of ZnO three-dimensional photonic crystal

[0035] Specific steps are as follows:

[0036] 1) Preparation of multilayer colloidal microspheres: the particle size of the colloidal microspheres used is 90nm to 10 μm, and the substrate used is a silicon wafer or a sapphire substrate with a ZnO single crystal substrate;

[0037]Method one (spin-coating method) is the same as method one in Example 1, but it is necessary to repeatedly repeat the single-layer preparation method to prepare multilayer colloidal microspheres, and the number of repetitions is proportional to the number of layers; or

[0038] Method 2 (self-assembly method) fill a container with a certain volume percentage of colloidal microsphere aqueous solution or ethanol (volume percentage concentration of 0.01% to 10%), then place the substrate vertically in the solution, and place the entire container on In a constant temperature and humidity environment, the temperature is 20-60 degree...

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Abstract

The invention discloses a method to make photon crystal that includes the following steps: adopting LB film method, self-assembly method or rotating coating method to form single layer or multilayer of colloid film, which would be used as template, using hydrothermal or solvent thermal method to make 2D or 3D photon crystal on semiconductor single crystal basal piece. The invention has the advantages of simple technology, and high product making efficiency.

Description

technical field [0001] The invention relates to a micro-nano processing method, in particular to a method for preparing photonic crystals. Background technique [0002] At present, the methods of micro-nano processing technology mainly include "top-down" high-resolution technology and "bottom-up" direct assembly process ["Summary of Micro-Nano Processing Technology and Its Application", Cui Zheng, Physics 2006, 1, 34-37]. The "top-down" method originated from the conventional photolithography technology in microelectronics technology. This method is to prepare the required functional structure on the surface of the substrate material by photolithography, mainly including optical and electron beam exposure (EBL) [[Pease, R.F.W.J.Vac.Sci.Technol.B 1992, 10, 278-285], [Pease, R.F.Patterning Techniques for sub-100nm Devices, Circuits and Systems.In Nanostructures and Mesoscopic Systems; Kirk, W.P., Reed, M.A., Eds.; Academic Press: Boston, 1992; pp 37-50], [McCord, M.A.J.Vac.S...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B7/10C30B29/16C30B29/64
Inventor 蓝鼎王育人张荫民
Owner INST OF MECHANICS CHINESE ACAD OF SCI