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Tin dioxide thin film and silicon heterojunction solar battery

A tin dioxide and silicon heterojunction technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low efficiency, the problem of passivation of the back electrode of the battery is not well solved, and the cost of indium oxide films is high. Achieve the effects of low industrialization cost, improved electrical output performance, and improved stability

Inactive Publication Date: 2008-07-02
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

However, this solar cell has the following disadvantages: first, indium is a noble metal, and the cost of the indium oxide thin film formed therefrom is high; second, because the back electrode passivation problem of the battery is not well resolved, the efficiency is not high

Method used

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  • Tin dioxide thin film and silicon heterojunction solar battery

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[0030] The n-type silicon substrate 4 selects n-type Czochralski monocrystalline silicon wafers with a resistivity of 1 Ωcm. The silicon wafers are (100) oriented, polished on one side, and have a thickness of 250 μm. The effective area of ​​the solar cell obtained is 2×2 cm 2 , the thickness of the fluorine-doped tin dioxide layer 2 is 76nm, the thicknesses of the intrinsic amorphous silicon film 5 and the phosphorus-doped amorphous silicon film 6 are 3nm and 30nm respectively, and the thickness of the silicon dioxide layer 3 is 2nm. The performance test results of the battery are: AM1.5, 100mW / cm 2 Under the irradiation of standard light intensity, the efficiency of the heterojunction solar cell prepared by this process reaches 14.2%, the open circuit voltage reaches 590mV, the short circuit current reaches 36mA, and the fill factor reaches 67%.

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Abstract

This invention is tin dioxide membrane and silicon heterojuncion solar battery in the field of semiconductor technology. It concludes: battery counter-light side grating electrode, fluorine-doped tin dioxide layer, silicon dioxide layer, n type silicon base, intrinsic non-crystalline silicon membrane, phosphor- doped non-crystalline silicon membrane and aluminium back electrode. The battery counter-light side grating electrode is on the top of the tin dioxide layer which is mixed into fluorine. A layer of silicon dioxide is interlaid between the tin dioxide layer which is mixed into fluorine and n type silicon base. At the back of n type silicon base deposit the intrinsic non-crystalline silicon membrane, phosphor mixing with non-crystalline silicon membrane and aluminium back electrode in turn. This invention reduces membrane series-wound resistance. The intrinsic non-crystalline silicon membrane, phosphor mixing with non-crystalline silicon membrane and silicon slice form high-low junction and improve battery electricity exporting ability. The efficiency of solar battery can reach 13% under 100mW / cm standard light intensity.

Description

technical field [0001] The invention relates to a battery in the technical field of semiconductors, in particular to a tin dioxide / silicon heterojunction solar battery. Background technique [0002] Since the first practical silicon solar cell was born in Bell Laboratories in the United States, crystalline silicon (including monocrystalline silicon and polycrystalline silicon) solar cells have been developed for more than half a century, and their shortcomings have also been highlighted in the development. First, the material The loss is large, the available silicon thickness is only 1% of the thickness of the silicon wafer, and the silicon material also increases the weight of the battery; second, the energy consumption is high, and the preparation of silicon ingots and the processing of bulk silicon batteries must be at a high temperature close to 1000 degrees The cost of crystalline silicon solar cells is still high. People have been discussing the technical route of thi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/042H01L31/072H01L31/077
CPCY02E10/50Y02E10/547
Inventor 周之斌李友杰
Owner SHANGHAI JIAO TONG UNIV
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