Cleaning liquid of semiconductor chip after chemical mechanical grind

Abstract

A kind of cleaning solution for semiconductor chip after chemo-mechanical grind. Contents of it are as follow, water, 100 part by weight; chelator, 0.01-4 part by weight; brightener, 0.001-2 part by weight; conserving agent,0.0005-0.1 part by weight; buffering agent,0.001-4 part by weight; surface active agent,0.001-1 part by weight. And pH is 1-7.

Description

technical field [0001] The invention relates to a cleaning liquid, in particular to a cleaning liquid for cleaning the chip after the copper chemical mechanical polishing process in the semiconductor chip processing and manufacturing process. Background technique [0002] With the design of semiconductor chips becoming smaller and smaller, copper materials are widely used as chip wire materials in the design standards of 0.13 μm and below because of their good electrical conductivity and good electron migration resistance. Since copper cannot form volatile compounds, it is easy to form copper interconnection wires and through-hole wires on the surface of silicon wafers. During the manufacturing process of semiconductor chips, chemical mechanical grinding technology must be used to remove them. In summary, the copper chemical mechanical polishing process is to polish the surface of the silicon wafer in contact with the polishing pad, using the abrasive as a lubricant. Abrasi...

AI Technical Summary

Problems solved by technology

In order to achieve better chip performance, with the increasing application of Low K materials as media in chip processing, new challenges have arisen for cleaning fluids after chemical mechanical polishing of copper. Most Low K materials are hydrophobic, similar to carbon dioxide Compared with silicon, the wettability is greatly reduced, and the traditional water-based cleaning solution after chemical mechanical polishing cannot clean the Low K material well.