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Sputtering, depositing split cavity type vacuum film deposition apparatus and working method thereof

A technology of vacuum thin film and deposition device, applied in sputtering coating, vacuum evaporation coating, ion implantation coating and other directions, can solve the problems of large pressure difference, easy deformation, unsuitable for sputtering deposition, etc., to prevent pollution, Conducive to contact and improve the effect of parameter controllability

Inactive Publication Date: 2010-02-03
ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are deficiencies in this material evaporation chamber. First, it is only suitable for preventing the pollution of the gas generated during the vacuum evaporation deposition process, and is not suitable for the implementation of sputtering deposition; It is easy to deform when it is in a different vacuum than the deposition chamber, especially when the pressure difference between the two is large

Method used

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  • Sputtering, depositing split cavity type vacuum film deposition apparatus and working method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Embodiment 1: the sputtering source 2 selects the high-energy electron beam source, the vacuum atmosphere of the sputtering chamber 18 is air (or oxygen or nitrogen or argon or other gases), and the atmosphere of the deposition chamber 19 is air of different pressures and different types. Now it is oxygen (or nitrogen or argon or other gases). The high-energy electron beam bombards the target 3 to generate a sputtering product 4—plasma plume. The plume reaches the substrate 9 through the through hole 5 on the hemispherical isolation plate 6, and nucleates and grows on the substrate 9 to form a thin film. Simultaneously can be installed in the sputtering chamber 18 as other auxiliary devices such as enhanced charge-coupled device (ICCD), be used for studying the composition and other kinetic behaviors of plume; ) and so on to study the behavior of thin film deposition process.

Embodiment 2

[0015] Embodiment 2: the sputtering source 2 selects the pulse laser light source for use, the vacuum atmosphere of the sputtering chamber 18 is air (or oxygen or nitrogen or argon or other gases), and the atmosphere of the deposition chamber 19 is air of different pressures and different types. Oxygen (or nitrogen or argon or other gases). The laser irradiates the target material 3 to generate a sputtering product 4—plasma plume. The plume reaches the substrate 9 through the through hole 5 on the hemispherical isolation plate 6, and nucleates and grows on the substrate 9 to form a thin film. Simultaneously can be installed in the sputtering chamber 18 as other auxiliary devices such as enhanced charge-coupled device (ICCD), be used for studying the composition and other kinetic behaviors of plume; ) and so on to study the behavior of thin film deposition process.

Embodiment 3

[0016] Embodiment 3: the sputtering source 2 selects the ion beam source, the vacuum atmosphere of the sputtering chamber 18 is air (or oxygen or nitrogen or argon or other gases), and the atmosphere of the deposition chamber 19 is different pressures and different types of air. Now Oxygen (or nitrogen or argon or other gases). The ion beam bombards the target material 3 to produce sputtering products 4, which reach the substrate 9 through the through holes 5 on the hemispherical isolation plate 6, and nucleate and grow on the substrate 9 to form a thin film. At the same time, other auxiliary devices such as a secondary ion mass spectrometer (SIMS) can be installed in the sputtering chamber 18 to study the composition changes of secondary ions; researches such as a high energy electron diffraction device (RHEED) can also be installed in the deposition chamber 19. Behavior during thin film deposition.

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Abstract

The invention discloses a sputtering, depositing separation cavity type deposition device for a vacuum thin-film and a working method for the same. The device comprises a sputtering cavity (18) and adeposition cavity (19) which are separated by a division board (6) with a through hole (5) and connected to a vacuum system respectively, as well as a target (3) and a substrate (6) arranged in the sputtering cavity (18) and the deposition cavity (19) respectively, wherein the through hole (5) is positioned on a deposition passage, the target (3) is arranged on a sputtering passage, particularlythe division board (6) has a ball shape or cone shape the projection part of which stretches into the sputtering cavity (18); and the method comprises the steps of: extracting vacuum of the sputteringcavity and the deposition cavity, and heating the target and the substrate as well as providing working gas and bombarding the sputtering source, particularly comprises the steps of: (a) determiningthe vacuum degree of the puttering cavity and the deposition cavity respectively according to the types of film forming, (b) determining the atmospheres in the puttering cavity and the deposition cavity respectively according to the requirements of film forming, and (c) starting the selected sputtering source to sputter and form film. The method can be used not only for vacuum evaporation deposition, but also for sputtering deposition to prepare the thin-film.

Description

technical field [0001] The invention relates to a thin film deposition device and a working method, in particular to a sputtering, deposition separation chamber type vacuum thin film deposition device and a working method thereof. Background technique [0002] At present, with the development of modern high-tech industries, thin film science and technology have become the basis of technologies such as microelectronics, information, sensors, optics, and solar energy utilization. Thin-film film-forming technologies are mainly represented by physical vapor deposition (PVD) and chemical vapor deposition (CVD). Generalized physical vapor deposition includes vacuum evaporation, molecular beam epitaxy (MBE), sputtering, pulsed laser deposition, and pulsed electron beam deposition. The process of physical vapor deposition thin film mainly includes the evaporation / sputtering of the target material, the transport of gas phase substances in space, and the deposition, nucleation and gr...

Claims

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Application Information

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IPC IPC(8): C23C14/34
Inventor 陶汝华董伟伟邓赞红李达方晓东
Owner ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI