Unlock instant, AI-driven research and patent intelligence for your innovation.

Dielectric and compound and method for forming same

A dielectric layer and composition technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of poor surface flatness, leakage path, high leakage current, etc., and achieve high aperture ratio, high breakdown voltage, The effect of high dielectric constant

Inactive Publication Date: 2007-08-01
IND TECH RES INST
View PDF1 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the surface of the dielectric layer manufactured by this method will form stripes and its surface flatness is not good, which is easy to cause leakage paths, resulting in high leakage current

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dielectric and compound and method for forming same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0038] Please refer to Figure 1, at the speed of 400rpm / 10s and 1000rpm / 30s, 20wt.% Ta(OC 2 H 5 ) 4 , 6 wt. % polyimide and N-methyl-2-pyrrolidone or γ-butyrolactone are stirred and mixed to form the composition by spin coating on the glass substrate on which the bottom electrode of indium tin oxide has been formed to form a thin film . Then, soft bake on a hot plate at 80 degrees Celsius, and then hard bake in an oven at 150 degrees Celsius to complete the fabrication of the gate dielectric layer. After that, a patterned semiconductor layer, source and drain electrodes are formed to complete a transistor with a top contact structure. After that, the I-V and C-V electrical properties were measured, and the dielectric constant could reach 5.7; the mobility μ was 0.047cm 2 / Vs; on / off ratio is 10 4 to 10 5 .

example 2

[0040] A transistor with a top contact structure was formed according to the above method, but the composition was changed to 30 wt. % penta(acetylacetonate) ditantalum (Ta 2 (acac) 5 ), 6 wt.% polyimide and a mixture of N-methyl-2-pyrrolidone or γ-butyrolactone. The I-V and C-V electrical properties of the transistor forming the top contact structure were measured, and its dielectric constant could reach 6.7; the mobility μ was 0.059cm 2 / Vs; on / off ratio of 10 4 .

[0041] The metal alkoxides in the above compositions are exemplified by tantalum alkoxides. Other metal alkoxides of the present invention, such as Al, Ti, Zr, Ta, Si, Ba, Ge or Hf alkoxides, can also be formed into compositions in a manner similar to the above-mentioned Examples 1 and 2, and then calcined. A dielectric layer is formed after baking the formed composition.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A combination which is used to produce dielectric layer includes liquid organometallic compound which is used as high dielectric herald object, a kind of sensitive or insensitive macromolecule medium and solvent, thereinto the liquid organometallic compound are metallic alkylated oxide such as Al,Ti,Zr,Ta,Si,Ba,Ge or Hf. The dielectric layer formed by the combination not only includes sensitive or insensitive macromolecule medium, but also amorphous phase metal oxide.

Description

technical field [0001] The present invention relates to a material layer for field effect transistors and a composition and method for forming the material layer, and particularly to a dielectric layer and the composition and method for forming the dielectric layer. Background technique [0002] In the semiconductor carrier transport of field effect transistors, a voltage is applied to the gate to form sufficient induced charges at the interface between the semiconductors and the gate dielectric to facilitate electron transport. In order to make the field effect transistor have a high current value I under low voltage operation D , in addition to the carrier mobility and the channel length ratio of the semiconductor, it is still related to the capacitance. The thinner the film thickness of the gate dielectric layer and the higher the dielectric constant, the higher the capacitance. [0003] 3M Company proposed a high-k dielectric layer in US Patent No. 6,586,791, which is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/288H01L21/312H01L29/51H01L51/30
Inventor 林蔚伶林鹏胡堂祥陈良湘
Owner IND TECH RES INST