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Zirconium adulterated lithium manganate anode film material and its making method

A technology of lithium zirconium manganese oxide and cathode thin film, which is applied in the field of all-solid-state thin-film lithium battery cathode material and its preparation, and can solve the problems of expensive cobalt, easy phase transition, and unfavorable practical application

Inactive Publication Date: 2007-09-12
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, cobalt element is toxic and cobalt is expensive, which limits the LiCoO 2 and LiNi x co 1-x o 2 Application in battery
LiMn 2 o 4 It is prone to phase transition in the 3V region, resulting in capacity attenuation; and LiMn 2 o 4 The potential jump between 3V and 4V electrochemical platforms is not conducive to its practical application

Method used

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  • Zirconium adulterated lithium manganate anode film material and its making method
  • Zirconium adulterated lithium manganate anode film material and its making method
  • Zirconium adulterated lithium manganate anode film material and its making method

Examples

Experimental program
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Effect test

Embodiment 1

[0014] Pure lithium manganese oxide (LMO) cathode thin films were prepared by radio frequency magnetron sputtering deposition method. First, use a molecular pump to pump the air pressure of the vacuum chamber to 1.0×10 -3 Pa, then the flow ratio of the argon gas and oxygen gas that is passed into the vacuum chamber is controlled by two needle valves to be 3:1, the direction of the inlet is facing the deposition substrate, and the flow rate of the mixed gas is adjusted to keep the pressure of the vacuum chamber at 1.0Pa; , the RF output power was 35 watts, the distance between the substrate and the lithium manganese oxide target was 5 cm, the deposition rate was 25 nm per hour, and the substrate temperature was room temperature. In the experiment, a Pt sheet was used as the substrate, and the lithium manganate target was synthesized by a high-temperature solid-state reaction.

[0015] As determined by X-ray diffraction, the deposited film has a spinel structure. The scanning ...

Embodiment 2

[0018] In the present invention, a radio frequency magnetron sputtering deposition method is used to prepare a lithium zirconium manganese oxide (LMZO) anode thin film. It was carried out in a vacuum system for magnetron sputtering deposition. First, use a molecular pump to pump the air pressure of the vacuum chamber to 1.0×10 -3 Pa, then the volumetric flow rate of argon gas and oxygen gas that is passed into the vacuum chamber is controlled by a needle valve, the flow ratio of argon gas and oxygen gas is 2:1, the direction of the inlet is facing the deposition substrate, and the mixed gas flow rate is adjusted to make the air pressure of the vacuum chamber Keep it at 1.0Pa; during deposition, the RF output power is 40 watts, the distance between the substrate and the zirconium-doped lithium manganese oxide target is 5 cm, the deposition rate is 40 nm per hour, the substrate temperature is room temperature, and the deposited film is heated at 500 ° C in air Annealed for 2 ho...

Embodiment 3

[0022] In the present invention, a radio frequency magnetron sputtering deposition method is used to prepare a lithium zirconium manganese oxide (LMZO) anode thin film. It was carried out in a vacuum system for magnetron sputtering deposition. First, use a molecular pump to pump the air pressure of the vacuum chamber to 1.0×10 -3 Pa, then the volume flow rate of argon gas and oxygen gas that is passed into the vacuum chamber is controlled by a needle valve, the flow ratio of argon gas and oxygen gas is 3:1, the direction of the inlet is facing the deposition substrate, and the mixed gas flow rate is adjusted so that the air pressure of the vacuum chamber Keep it at 1.2Pa; during deposition, the RF output power is 40 watts, the distance between the substrate and the zirconium-doped lithium manganese oxide target is 5 cm, the deposition rate is 35 nm per hour, the substrate temperature is room temperature, and the deposited film is heated at 500 ° C in air Annealed for 2 hours....

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Abstract

The invention belongs to the lithium ion film battery technology area, specifically relates to a positive electrode material mix with the zirconium lithium manganate film (LMZO) which applies to the entire solid film lithium battery and its preparation method, the invention uses the radio frequency magnetron sputtering sedimentation method prepare the mix zirconium lithium manganate film. Combined the lithium phosphorus oxygen nitrogen (LiPON) solidstate electrolyte film by radio frequency magnetron sputtering preparation and the metal lithium negative film by the vacuum hotly evaporate preparation, composing the solid state film lithium battery. The battery specific capacity can reach 53mAh / cm2-u m; the cycle-index can reach 300 times. These results indicated that, the radio frequency magnetron sputtering method prepare LMZO positive electrodes films, can apply to the entire solid state film lithium battery.

Description

technical field [0001] The invention belongs to the technical field of lithium-ion thin-film batteries, and in particular relates to a positive electrode material for an all-solid-state thin-film lithium battery and a preparation method thereof. The invention relates to the first preparation of zirconium-doped lithium manganate film (LMZO) by radio frequency magnetron sputtering. This technology has successfully prepared a thin film with nanocrystalline characteristics. Its main feature is that the film particles are small, which changes the electrochemical behavior of pure lithium manganese oxide (LMO), and shows oblique charge and discharge in a large potential range. The curve overcomes the adverse effect of the potential jump in the LMO charge-discharge curve, has high electronic conductivity, and can be applied to all-solid-state thin-film lithium batteries. Background technique [0002] With the miniaturization of microelectronic devices, it is urgent to develop a mat...

Claims

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Application Information

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IPC IPC(8): H01M4/02H01M4/04C23C14/35C23C14/54C23C14/06C01G45/12C01D15/00
CPCY02E60/10
Inventor 李驰麟傅正文
Owner FUDAN UNIV
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