Method for forming sn-ag-cu three-element alloy thin film on base

A ternary alloy and thin film technology, applied in the direction of electrodes, etc., can solve problems such as the inability to obtain electroplated thin films, and achieve the effects of preventing whiskers, uniform thickness, and good solderability

Active Publication Date: 2007-10-03
FCM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even in this proposal, sulfides such as thioamide compounds and sulfur compounds are used, and there is a problem that a plating film with the same low melting point as above cannot be obtained.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0111] First, punch the strip-shaped phosphor bronze with a thickness of 0.3 mm and a width of 30 mm, which is a conductive substrate as the substrate, and punch it into the shape of a connector, and cut the continuous connector in the shape of a connector terminal into After a length of 100m, it is wound into rolls. And the coil is sent out to a continuous plating device, mounted on a shaft.

[0112] Then, by continuously immersing the above-mentioned base material in the above-mentioned continuous electroplating apparatus with a filling liquid temperature of 48° C. and an aqueous solution containing sodium hydroxide (using 50 g / l of Escri-n 30 (manufactured by Okuno Pharmaceutical Co., Ltd.), pH 12.5) In the immersion solution for 1 minute, the first washing treatment is performed. Thereafter, washing with water was performed several times.

[0113] Next, in an electrolytic tank (using 100 g / l of NC Raster-L (manufactured by Okuno Pharmaceutical Co., Ltd.), pH 13.2 as an a...

Embodiment 2

[0121] Except that the electroplating solution used for the formation of the Sn-Ag-Cu ternary alloy film used in Example 1 is replaced by an electrolytic solution containing the following components, the other is completely the same as in Example 1 to obtain the formation of Sn-Ag-Cu on the substrate. The article of the present invention of ternary alloy film; The composition of this plating solution is: the Sn compound (p-toluenesulfonic acid Sn salt) of 250g / l, the Ag compound (p-toluenesulfonic acid Ag salt) of 24g / l, 9g / l Cu compound (Cu salt of p-toluenesulfonate), 240g / l polymeric phosphate-based chelating agent (sodium polyphosphate (Na 5 o 10 P 3 )) (10 parts by mass relative to 1 part by mass of the above-mentioned Ag compound), 90 g / l as organic chelating agent porphyrins (sodium copper-chlorophyllin (C 34 h 31 CuN 4 Na 3 o 6 )) (10 parts by mass relative to 1 part by mass of the above-mentioned Cu compound), 30 cc / l additive (polyethylene glycol).

[0122] Ca...

Embodiment 3

[0126] Except that the electroplating solution used for the formation of the Sn-Ag-Cu ternary alloy film used in Example 1 is replaced by an electrolytic solution containing the following components, the other is completely the same as in Example 1 to obtain the formation of Sn-Ag-Cu on the substrate. The article of the present invention of ternary alloy thin film; The composition of this plating solution is: the Sn compound (p-phenolsulfonic acid Sn salt) of 260g / l, the Ag compound (p-phenolsulfonic acid Ag salt) of 10g / l, 2.5g / l 1 Cu compound (Cu salt of p-phenolsulfonic acid), 100g / l as inorganic chelating agent polymeric phosphate-based chelating agent (potassium metaphosphate (KO 3 P)) (10 parts by mass relative to 1 part by mass of the above-mentioned Ag compound), 25 g / l as an organic system chelating agent porphyrins (tetraphenylporphyrin (C 44 h 30 N 4 )) (10 parts by mass relative to 1 part by mass of the above-mentioned Cu compound), 30 cc / l additive (polyethylene...

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Abstract

A method of forming an Sn-Ag-Cu ternary alloy thin-film of the present invention forms the ternary alloy thin-film by electroplating. A plating bath contains an Sn compound, an Ag compound, a Cu compound, an inorganic chelating agent and an organic chelating agent. The inorganic chelating agent is one of a polymerized phosphate-based chelating agent and a chelating agent represented by a chemical formula (I): MF X (X-Y)- ... (I) where M is an arbitrary metal, X is an arbitrary natural number and Y is an oxidation number of M. The organic chelating agent is one of porphyrins, dipivaloylmethane, phthalocyanines and a compound represented by a chemical formula (II): R-(CH 2 CH 2 O) n -A ... (II) where R is an alkyl group having a carbon number of 8 to 30, A is CH 2 COONa or CH 2 SO 4 Na and n is a natural number.

Description

technical field [0001] The invention relates to a method for forming a Sn-Ag-Cu ternary alloy thin film on a substrate. More specifically, it relates to terminals (such as connectors, relays, slide switches, terminals for soldering joints, etc.) A method for forming a Sn-Ag-Cu ternary alloy thin film on articles such as . Background technique [0002] Examples include methods of using a terminal made of a conductive substrate as a method of conducting electricity in various products such as semiconductor products, electric products, electronic products, solar cells, and automobiles, and performing soldering and contacting. [0003] The purpose of such terminals is to improve solderability or corrosion resistance, and the surface of the conductive substrate is usually coated with metals such as Au, Ag, Pd, Cu, Ni, In, Sn, and Sn-Pb alloys (such as JP-A-1-298617 (Patent Document 1)). Among these metals, Sn and Sn-Pn alloys are most commonly used in consideration of cost, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/60C25D7/00C25D17/10
Inventor 三浦茂纪
Owner FCM CO LTD
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