2 results about "PHENOLSULFONIC ACID" patented technology

This invention discloses an etching solution composition for inhibiting etching blackening and precipitation, belonging to the field of electronic chemical technology. The etching solution composition, by weight percentage, includes: 10-25% hydrogen peroxide, 3-15% organic acid, 2-10% alkanolamine organic base, 0.01-1.5% resist, 0.1-1% stabilizer, 0.1-3% phenolsulfonic acid, 0.1-3% ethylene oxide polymerized diol, 0.1-3% organic butyl ether, with the balance being deionized water. This invention introduces ethylene oxide polymerized diol and organic butyl ether, forming a synergistic system with alkanolamine organic base and stabilizer. This significantly improves the solubility of the stabilizer and copper ion complex, slows down its aggregation rate, and reduces its adsorption capacity on the substrate surface. Therefore, even at high copper ion concentrations, it can effectively prevent precipitation and substrate blackening, significantly extending the solution life. It is suitable for copper etching processes such as printed circuit boards and lead frames.

This invention belongs to the field of chemical product synthesis technology and discloses a method for alkylating methylphenolic compounds. Under normal pressure, methylphenolic compounds are added to a catalyst, cresolsulfonic acid, and an auxiliary agent, a ferrous salt. Isobutylene is then introduced into the reaction solution at a certain gas rate under stirring. After the reaction is complete, an alkylated compound is obtained. The phenol in the methylphenolic compound is the raw phenol, and the amount of isobutylene introduced into the reaction is 0.5-1.1 times the amount of the raw phenol. The catalyst, cresolsulfonic acid, accounts for 0.1%-1% of the amount of the raw phenol. The auxiliary agent, the ferrous salt, accounts for 0.5%-5% of the amount of the cresolsulfonic acid. This method uses a small amount of catalyst, has a short and mild reaction time, and achieves a high conversion rate.