Novel electroluminescent device and method for producing the same
An electroluminescent device, an organic technology, applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as difficult to repeat device performance, high manufacturing costs, and applicability, and achieve light weight, chemical The effect of mature technology and fast response
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Embodiment 1
[0062] As shown in FIG. 2 , the light-emitting layer 3 in the structure of the device includes a blue light-emitting layer 31 , an electron transport layer 7 , and a compound control layer 4 . Devices that do not include the compound control layer 4 are conventional devices.
[0063] The material of the blue light-emitting layer of the device is NPB, and the material of the electron transport layer is Alq 3 , Composite control layer BCP, cathode layer with Mg:Ag alloy. The entire device structure is described as:
[0064] Glass substrate / ITO / NPB(20nm) / BCP(0nm or 0.3nm) / Alq 3 (50nm) / Mg:Ag(200nm)
[0065] The preparation method is as follows:
[0066] ①Use detergent, ethanol solution, acetone solution and deionized water to ultrasonically clean the conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. Wherein the ITO film on the glass substrate is used as the anode layer of the device, the square resistance of the ITO film is 10Ω / □, and the film thickn...
Embodiment 2
[0074] As shown in FIG. 3 , the light-emitting layer 3 in the structure of the device includes a blue light-emitting layer 32 , a green light-emitting layer 33 , and a composite control layer 4 .
[0075] The material of the blue light-emitting layer of the device is NPB, and the material of the green light-emitting layer is Alq 3 , Composite control layer BCP, cathode layer with Mg:Ag alloy. The entire device structure is described as:
[0076] Glass substrate / ITO / NPB(20nm) / BCP(1.5nm) / Alq 3 (50nm) / Mg:Ag(200nm)
[0077] The fabrication process of the device is similar to that of Example 1.
[0078] The luminescence spectrum of the device at a forward voltage of 10V is shown in FIG. 7 .
Embodiment 3
[0080] As shown in FIG. 4 , the light-emitting layer 3 in the structure of the device includes a blue light-emitting layer 34 , a red light-emitting layer 35 and a composite control layer 4 .
[0081] The material of the blue light-emitting layer of the device is NPB, and the material of the red light-emitting layer is Alq 3 : DCJTB, composite control layer BCP, cathode layer with Mg:Ag alloy. The entire device structure is described as:
[0082] Glass substrate / ITO / NPB(20nm) / BCP(0.3nm) / Alq 3 :DCJTB(50nm) / Mg:Ag(200nm)
[0083] The fabrication process of the device is similar to that of Example 1.
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