Conductive, plasma-resistant member
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHIN ETSU CHEM CO LTD
- Publication Date
- 2008-03-05
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The present invention relates to an electrically conductive, plasma-resistant component capable of resisting attack by a halogen-based plasma and having a coating providing electrical conductivity, wherein at least a part of the component to be exposed to the plasma has a coating formed by thermal spraying thereon, The coating is made from metal yttrium, a mixture of metal yttrium and yttrium oxide, a mixture of metal yttrium and yttrium fluoride, or a mixture of metal yttrium and yttrium oxide and yttrium fluoride. Such members may be suitable for use, for example, in semiconductor manufacturing equipment or in flat panel display manufacturing equipment (for example, equipment used to manufacture liquid crystal displays, organic electroluminescent devices, or inorganic electroluminescent devices) exposed to plasma components or parts. Background technique
[0002] In order to prevent workpieces from being contaminated by impurities, semiconductor man...