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Silicon thin-film photocell with light trapping structure

A technology of light trapping structure and silicon thin film, which is applied in the field of solar energy utilization, can solve the problems of small trapping effect and large undulating lateral size, and achieves the effect of good effect and low cost.

Inactive Publication Date: 2008-09-03
李德杰
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are also reports of undulating surfaces formed by photolithography and etching methods, but due to the large lateral size of the undulations, the light trapping effect is very small

Method used

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  • Silicon thin-film photocell with light trapping structure
  • Silicon thin-film photocell with light trapping structure
  • Silicon thin-film photocell with light trapping structure

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Embodiment 1: take borosilicate glass as the substrate, deposit a layer of silicon dioxide with a thickness of 150 nanometers as an isolation layer, and then deposit a layer of aluminum-doped zinc oxide with a thickness of 60 nanometers as a transparent electrode and sunlight reduction reflective layer. The amorphous silicon film is deposited by magnetron sputtering, and then P-type silicon, I-type silicon and N-type silicon are prepared by metal-induced combined solid-phase crystallization method, with thicknesses of 30 nanometers, 400 nanometers and 50 nanometers respectively. A tin film with a thickness of 30 nanometers is deposited on the obtained substrate, and the substrate is heated to 100 degrees during deposition. Using the tin film as a mask, perform plasma etching with an etching depth of 30 nanometers, and then etch the tin film in nitric acid. After conventional N-type contact layer treatment on the resulting substrate, a 50 nm silver reflective electrode ...

Embodiment 2

[0027]Example 2: Using borosilicate glass as the substrate, a layer of silicon dioxide with a thickness of 150 nanometers is deposited as an isolation layer by reactive sputtering, and then a layer of indium tin oxide with a thickness of 60 nanometers is deposited as a transparent electrode and sunlight anti-reflection Floor. The amorphous silicon film is deposited by magnetron sputtering, and then P-type silicon, I-type silicon and N-type silicon are prepared by metal-induced combined solid-phase crystallization method, and the thicknesses are 30 nanometers, 800 nanometers and 50 nanometers respectively. A bismuth thin film with a thickness of 30 nanometers is deposited on the obtained substrate, and the substrate is heated to 200 degrees during deposition. Using the bismuth film as a mask, plasma etching is performed with an etching depth of 25 nanometers, and then the bismuth film is etched away in nitric acid. After conventional N-type contact layer treatment on the resul...

Embodiment 3

[0028] Example 3: Using borosilicate glass as the substrate, deposit a layer of silicon dioxide with a thickness of 150 nanometers as a barrier layer by reactive sputtering, and then deposit a layer of indium tin oxide with a thickness of 60 nanometers as a transparent electrode and sunlight anti-reflection Floor. The amorphous silicon film is deposited by magnetron sputtering, and then P-type silicon, I-type silicon and N-type silicon are prepared by metal-induced combined solid-phase crystallization method, and the thicknesses are 30 nanometers, 800 nanometers and 50 nanometers respectively. An indium film with a thickness of 20 nanometers is deposited on the obtained substrate, and the substrate is heated to 200 degrees during deposition. The indium film is used as a mask to perform plasma etching with an etching depth of 25 nanometers, and then the indium film is etched away in hydrochloric acid. After conventional N-type contact layer treatment on the resulting substrate...

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Abstract

A silicon thin-film photocell with light trapping scheme belongs to solar energy utilization field. The elementary structure is glass substrate, silicon dioxide layer, transparent conductive film, P type semi-conductor silicon layer, I type semi- insulation silicon layer, N type semi-conductor silicon layer, silver and compound film reflection electric pole combined by antioxidation metal from top to bottom. The silicon layer under the reflection electric pole etching forms heave surface in which the dimension of the lateral dimension and the thickness direction of the island shape is smaller than 300 nano under the protecting of the low-melting point metal non- continuous island shape thin film. The present invention has simple structure, good effect, suitable for large-scale producing, and suitable for the application of large area silicon thin-film photocell.

Description

Technical field: [0001] The invention is a novel silicon thin-film photovoltaic cell, which belongs to the technical field of solar energy utilization. technical background: [0002] The gradual depletion of fossil energy and environmental protection issues make the development of renewable energy more and more important and become an important direction of industrial development. Renewable energy mainly includes wind energy, tidal energy, biomass energy, water energy and solar energy, among which the utilization of solar energy includes two directions: photothermal and photoelectric. The utilization of light and heat is developing very fast in China, and solar water heaters can be seen everywhere, but the development of the photovoltaic industry is not very optimistic. The main body of current photovoltaic cells is crystalline silicon cells. Due to the large amount of monocrystalline or polycrystalline silicon materials required, the cost of power generation is dozens of t...

Claims

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Application Information

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IPC IPC(8): H01L31/075H01L31/042H01L31/18H01L31/0445H01L31/077
CPCY02E10/547Y02P70/50
Inventor 李德杰
Owner 李德杰
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