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A kind of infrared detector and its manufacturing method

A technology for infrared detectors and manufacturing methods, which is applied in the direction of electric radiation detectors, manufacturing microstructure devices, semiconductor/solid-state device components, etc., and can solve the problems of metal electrode short circuit, uniformity, sensitivity reduction, and infrared detector quality. To avoid short circuit, reduce etching damage and pollution, and improve performance

Active Publication Date: 2015-08-12
ZHEJIANG DALI TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above-mentioned process of directly depositing a metal layer on the detector sensitive material layer and forming a metal electrode through photolithography and etching processes will cause etching on the detector sensitive material layer due to the direct etching on the detector sensitive material layer. Damage or pollution, which will have adverse effects on the quality of the infrared detector, such as its uniformity, sensitivity will be greatly reduced, and short circuits between metal electrodes

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  • A kind of infrared detector and its manufacturing method
  • A kind of infrared detector and its manufacturing method
  • A kind of infrared detector and its manufacturing method

Examples

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no. 1 example

[0016] figure 1 It is a sectional view of the infrared detector of the present invention. The infrared detector includes: a silicon substrate 1 , a detector sacrificial layer 2 laminated on the silicon substrate 1 in sequence, a release protection and support layer 3 , a metal electrode 40 , and a sensitive material detection layer 5 . Wherein detector sacrificial layer 2 is porous silicon or amorphous silicon sacrificial layer or silicon dioxide (SiO2); Detector sensitive material layer 5 is amorphous silicon or vanadium oxide or other materials; Release protection and support layer 3 can be dioxide Silicon (SiO2), silicon oxynitride (SiON), silicon nitride (SiN), silicon carbide (SiC) or other silicon (Si), oxygen (O), carbon (C), nitrogen (N) or other components Dielectric film, also can be the above-mentioned film of non-stoichiometric ratio, such as oxygen-rich or silicon-rich silicon dioxide, can also be the above-mentioned film doped with boron (B), phosphorus (P), car...

no. 2 example

[0026] The difference between the manufacturing method of this embodiment and the first embodiment is that after step S5, that is, figure 1 On the basis of the shown structure of the infrared detector, a step is added: remove part of the detector sensitive material layer to expose the metal electrode 40 or release the protection and supporting layer 3 or the sacrificial layer 2 .

[0027] How much the detector sensitive material layer is removed depends on the needs of the process, if only the metal electrode 40 needs to be exposed, then only the figure 1 On the basis of the shown infrared detector structure, the detector sensitive material layer covered on the metal electrode 40 can be etched away and planarized. The structure diagram of the infrared detector after fabrication is shown as Figure 5 As shown, the detector sensitive material layer 5' covers the surface of the release protection and support layer 3 and fills between adjacent metal electrodes 40. If it is necess...

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Abstract

The invention discloses an infrared detector and a preparation method thereof, which relate to the technical field of fabrication process of the infrared detector. The structure of the infrared detector of the invention comprises a silicon substrate, a detector sacrificial layer, a release guard and supporting layer, metallic electrodes and detector sensitive material layers which are sequentially laminated on the silicon substrate, wherein, the detector sensitive material layers are formed on the surfaces of the metallic electrodes and the surface of the release guard and supporting layer which is not covered by the metallic electrodes, or the detector sensitive material layers cover the surface of the release guard and supporting layer and are filled between two adjacent metallic electrodes. Compared with the prior art, the infrared detector and the preparation method thereof of the invention has the advantage that after the fabrication of the metallic electrodes, the detector sensitive material layers are deposited; therefore, damage caused by following processes to the detector sensitive material layers is reduced, short circuit between the metallic electrodes can be avoided, and the performance, the rate of finished products and the reliability of the infrared detector can be relatively improved.

Description

technical field [0001] The invention relates to a manufacturing process of an infrared detector, in particular to an infrared detector and a manufacturing method thereof. Background technique [0002] Micro-Electro-Mechanical System (MEMS) technology has many advantages such as small, intelligent, executable, integrable, good process compatibility, low cost, etc., so it has begun to be widely used in the field of infrared detection technology. Many fields. Infrared detector is a MEMS product widely used in the field of infrared detection technology. It uses the detector sensitive material layer (usually amorphous silicon or vanadium oxide) to absorb infrared rays and convert them into electrical signals, thereby realizing thermal Imaging function, which can be used for safety detection of power network, forest fire detection, detection of human body temperature and other places. [0003] The quality of the detector sensitive material layer and metal electrodes in the infra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02G01J5/10B81C1/00
Inventor 康晓旭姜利军
Owner ZHEJIANG DALI TECH