Groove insulated gate type gate-leakage composite field plate power device and preparation method thereof

A technology of insulated gate and power devices, which is applied in the field of microelectronics, can solve the problems of reducing device yield, complex manufacturing process, and cumbersome process debugging, etc., and achieve the effects of reducing electric field, increasing breakdown voltage, and enhancing reliability

Inactive Publication Date: 2009-04-22
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the manufacturing process of the high electron mobility transistor using the stacked field plate structure is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material depositi

Method used

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  • Groove insulated gate type gate-leakage composite field plate power device and preparation method thereof
  • Groove insulated gate type gate-leakage composite field plate power device and preparation method thereof
  • Groove insulated gate type gate-leakage composite field plate power device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] The production substrate is sapphire, and the insulating dielectric layer is SiO 2 , the passivation layer is SiN, the protective layer is SiN, and the grid field plate, drain field plate and each floating field plate are Ti / Au metal composite gate-drain composite field plate power devices, and the process is:

[0057] 1. Epitaxial undoped transition layer 2 with a thickness of 1 μm on the sapphire substrate 1 by metal organic chemical vapor deposition technology, the transition layer is composed of GaN materials with thicknesses of 50 nm and 0.95 μm from bottom to top. The process conditions used for the epitaxial lower layer GaN material are: temperature 550°C, pressure 155 Torr, hydrogen gas flow rate 5500 sccm, ammonia gas flow rate 5500 sccm, gallium source flow rate 50 μmol / min; the process conditions for the epitaxial upper layer GaN material are: temperature 1090°C, pressure 155 Torr, hydrogen flow rate 5500 sccm, ammonia gas flow rate 5500 sccm, gallium source ...

Embodiment 2

[0067] The production substrate is silicon carbide, the insulating dielectric layer is SiN, and the passivation layer is SiO 2 , the protective layer is SiO 2 , the grid field plate, the drain field plate and each floating field plate are Ni / Au metal composite gate-drain composite field plate power devices, and the process is:

[0068] 1. An undoped transition layer 2 with a thickness of 2.8 μm is epitaxially formed on a silicon carbide substrate 1 by metal-organic chemical vapor deposition technology. Made of GaN material. The process conditions used for the epitaxial lower layer AlN material are: temperature 1020°C, pressure 160 Torr, hydrogen gas flow rate 4700 sccm, ammonia gas flow rate 4700 sccm, aluminum source flow rate 11 μmol / min; the process conditions for the epitaxial upper layer GaN material are: temperature 1020°C, pressure 160 Torr, hydrogen flow rate 4700 sccm, ammonia gas flow rate 4700 sccm, gallium source flow rate 150 μmol / min.

[0069] 2. Deposit undop...

Embodiment 3

[0078] The production substrate is silicon, and the insulating dielectric layer is Al 2 o 3 , the passivation layer is SiN, the protective layer is SiN, the gate field plate, the drain field plate and each floating field plate are a gate-drain composite field plate power device composed of Pt / Au metal, and the process is:

[0079] 1. Using metal organic chemical vapor deposition technology to epitaxially undoped transition layer 2 with a thickness of 5 μm on the silicon substrate 1, the transition layer is composed of AlN material with a thickness of 120 nm and GaN material with a thickness of 4.88 μm from bottom to top constitute. The process conditions used for the epitaxial lower layer AlN material are: temperature 850 ° C, pressure 158 Torr, hydrogen gas flow rate 4800 sccm, ammonia gas flow rate 4800 sccm, aluminum source flow rate 33 μmol / min; the process conditions used for the epitaxial upper layer GaN material are: temperature 1040°C, pressure 158 Torr, hydrogen flo...

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Abstract

The invention discloses a groove-insulated gate type gate-drain composite source field plate power device and a fabrication method thereof. The device comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), an insulation medium layer (7), an insulated groove gate (8), a passivation layer (9), a gate field plate (10), a drain field plate (12) and a protection layer (13); the drain field plate (12) is electrically connected with the drain electrode (5), and the gate field plate (10) is electrically connected with the insulated groove gate (8), wherein, a groove (6) is opened on the barrier layer; and n floating field plates (11) are deposited on the passivation layer arranged between the gate field plate and the drain field plate. All the floating field plates have the same size and are mutually independent, and the floating field plates are equidistantly distributed between the gate field plate and the drain field plate. The n floating field plates, the gate field plate and the drain field plate are completed on the passivation layer by one-time process. The power device has the advantages of simple process, strong reliability and high output power, and the power device and the fabrication method can be used for fabricating high power devices.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to semiconductor devices, in particular to a grooved insulating gate type gate-drain compound field plate power device based on a heterojunction structure of a wide bandgap compound semiconductor material, which can be used as a basic device of a power system. technical background [0002] In today's world, power semiconductor devices such as power rectifiers and power switches have been widely used in many power fields such as switching power supplies, automotive electronics, industrial control, radio communications, and motor control. Power semiconductor devices must have the following two important parameters, namely high breakdown voltage and low on-resistance. The Baliga figure of merit reflects the compromise relationship between breakdown voltage and on-resistance in power semiconductor devices. In order to meet the needs of high breakdown voltage and low on-resistance,...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 毛维杨翠郝跃过润秋
Owner XIDIAN UNIV
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