Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of multilayer order polymer matrix nanometer metal sulphide composite membrane

A technology of metal sulfide and composite thin film, which is applied in metal material coating process, coating, photovoltaic power generation, etc.

Inactive Publication Date: 2009-10-21
徐国财
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The above-mentioned thin film preparation method is a layer of single thin film, or although it is a multi-layer thin film, there is a defect of the isolation layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of multilayer order polymer matrix nanometer metal sulphide composite membrane
  • Preparation method of multilayer order polymer matrix nanometer metal sulphide composite membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Preparation of Polyvinyl Alcohol-Based Nano Silver Sulfide Composite Films

[0025] Immerse the clean single crystal silicon wafer in the mixed solution of macromolecular polymer polyvinyl alcohol and silver nitrate, the mass concentration of polyvinyl alcohol is 20g / L, the mass concentration of silver nitrate is 0.2g / L, soak for 30s. Take it out, fix the monocrystalline silicon wafer on the rotor of the centrifuge, spin at 2000r / min, and spin coat for 30s; take it out and let it stand, and dry it naturally to obtain the first layer of thin film single crystal silicon wafer.

[0026] Then, immerse the dry first layer of thin film monocrystalline silicon wafer into 2g / L sodium sulfide (Na 2 S) in the solution for 5 minutes, take it out, fix it on a spin coater, and rotate it at 2000r / min for 30s; take it out and let it stand, and dry it naturally to obtain the second layer of thin film single crystal silicon wafer.

[0027] Finally, immerse the dried second-layer thin-f...

Embodiment 2

[0030] Preparation of Nano-molybdenum Sulfide Composite Thin Films Based on Polyethylene Oxide-Polypropylene Oxide Block Copolymer

[0031] With the molybdenum nitrate mixed solution of polyethylene oxide-polypropylene oxide block copolymer, wherein the mass concentration of polyethylene oxide-polypropylene oxide block copolymer is 10g / L, is 0.8g with mass concentration The molybdenum nitrate block copolymer solution of / L replaces the silver nitrate polyvinyl alcohol solution in the example 1, and other operation steps are with implementing 1. The above-mentioned steps were repeated four times, and finally four layers of polyethylene oxide-polypropylene oxide block copolymer-based nanomolybdenum sulfide composite films were obtained.

Embodiment 3

[0033] Preparation of poly(hydroxypropyl acrylate)-based nano-sulfurized copper sulfide barrier hybrid composite film

[0034] Immerse the clean glass sheet into the mixed solution of macromolecular polymer polyhydroxypropyl acrylate, nitric acid septum and copper nitrate, wherein the mass concentration of polyhydroxypropyl acrylate is 50g / L, and the mass concentration of nitric acid septum and copper nitrate is 50g / L. 0.15g / L, soaking time 20s. Take it out, fix it on a spin coater, rotate it at 2000r / min for 30s, take it out and let it stand, and dry it naturally;

[0035] Then, immerse into the prepared mass concentration 5g / L sodium sulfide (Na 2 S) in the solution for 8 minutes, take it out, fix it on a spin coater, rotate it at 2000r / min for 30s, take it out and let it stand, and let it dry naturally;

[0036] Finally, immerse in warm water at 30°C for 50 seconds, take it out, remove unreacted metal salts and sulfides, and dry naturally; finally, the first layer of poly...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of multilayer order polymer matrix nanometer metal sulphide composite membrane. The method comprises the following steps of: 1. dipping a clean carrier pellet in the mixed solution of highpolymer and more than one nitrate, then soaking, taking out and drying the mixed solution, thus obtaining a highpolymer matrix nitrate membrane carrier pellet; 2. dipping the dried nitrate membrane carrier pellet in a sulphide solution again, soaking, taking out and drying, thus obtaining a layer of highpolymer matrix polycrystal membrane carrier pellet; and 3. dipping the dried highpolymer matrix polycrystal membrane carrier pellet in mild water; then soaking, taking out and drying, thus obtaining a first layer of highpolymer matrix nanometer metal sulphide composite membrane; and repeating the steps for N times to obtain an N layers of composite membrane. The continuous phases among layers of the nanometer metal sulphide composite membranes are the matrixes of nanometer particles, the thickness of nanometer composite layers is between dozens and hundreds of nanometers. Due to the attribute and the structure of nanometer particles, the nanometer composite membrane has adjustable optical properties.

Description

technical field [0001] The invention relates to a nano-sulfide composite film, in particular to a preparation method of a polymer-based multilayer ordered nano-sulfide metal composite film. Background technique [0002] Metal chalcogenides (sulfides, selenides, tellurides), as important direct bandgap semiconductor materials, are widely used in various fields such as light-emitting diodes, nonlinear optical materials, photosensitive sensor materials, solar cells, and photochemical catalytic materials. attention of physicists and chemists. Due to their special optoelectronic properties, they are expected to be materials for preparing a new generation of solid-state electronic and optoelectronic devices. Researchers have developed a series of methods to prepare nano-sized metal chalcogenide semiconductor materials. [0003] Nano-thin films have many unique properties, such as giant conductance, giant magnetoresistance effect, giant Hall effect, visible light emission and oth...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C26/00H01L31/0392H01L31/0296H01L49/00H01L33/00
CPCY02E10/50
Inventor 徐国财方杨萍姚宝慧甘颖张晓梅
Owner 徐国财
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com