Preparation method of ammonia-sensitive material for detecting ammonia concentration in air

An ammonia concentration and ammonia sensitivity technology, applied in the field of ammonia sensitive materials, can solve problems such as unsatisfactory stability, dispersion of component parameters, and product performance differences, and achieve the effect of fast signal response and recovery speed, miniaturization, and small size.

Inactive Publication Date: 2009-10-28
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages are that it must work at high temperature, poor selectivity to odor or gas, scattered component parameters, unsatisfactory stability, high power requirements, and easy poisoning
The current materials mainly include phthalocyanine polymer, LB film, po

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] A method for preparing an ammonia-sensitive material for detecting ammonia concentration in air, characterized in that the following steps are adopted:

[0015] A) The N-type silicon chip is fixed in the electrolytic cell, and hydrofluoric acid and dimethyl sulfoxide with a weight concentration of 40% are added as the electrolyte in a ratio of 1:1 by volume, with the silicon chip as the anode and the platinum electrode as the electrolytic solution. Cathode, for electrolytic etching, set the fluctuation range of current intensity to 35-100mA, each fluctuation period is 5 seconds, and the number of repeated fluctuations is 75 times. After the etching is completed, the silicon wafer is cleaned with ethanol for many times, and then dried with nitrogen ;

[0016] B) reacting the etched silicon wafer with undecylenic acid for 1 hour at 210° C. to form a porous silicon wafer;

[0017] C) Soak the porous silicon wafer obtained in step B for 30 minutes in a bromophenol blue sol...

Embodiment 2

[0019] A method for preparing an ammonia-sensitive material for detecting ammonia concentration in air, characterized in that the following steps are adopted:

[0020] A) N-type silicon wafers are fixed in the electrolytic cell, and hydrofluoric acid and dimethyl sulfoxide with a weight concentration of 40% are added as electrolytes in a volume ratio of 2:1, with the silicon wafers as the anode and the platinum electrode as the electrolytic solution. Cathode, for electrolytic etching, set the fluctuation range of current intensity to 35-100mA, each fluctuation period is 5 seconds, and the number of repeated fluctuations is 60 times. After the etching is completed, the silicon wafer is cleaned with ethanol several times, and then dried with nitrogen ;

[0021] B) reacting the etched silicon wafer with undecylenic acid for 1 hour at 210° C. to form a porous silicon wafer;

[0022] C) Soak the porous silicon wafer obtained in step B for 20 minutes in a bromothymol solution with ...

Embodiment 3

[0024] A method for preparing an ammonia-sensitive material for detecting ammonia concentration in air, characterized in that the following steps are adopted:

[0025] A) N-type silicon wafers are fixed in the electrolytic cell, and hydrofluoric acid and dimethyl sulfoxide with a weight concentration of 40% are added as electrolytes in a ratio of 4:1 by volume, with the silicon wafers as the anode and the platinum electrode as the electrolytic solution. Cathode, for electrolytic etching, set the fluctuation range of current intensity to 35-100mA, each fluctuation period is 5 seconds, and the number of repeated fluctuations is 30 times. After the etching is completed, the silicon wafer is cleaned with ethanol several times, and then dried with nitrogen ;

[0026] B) reacting the etched silicon wafer with undecylenic acid for 1 hour at 210° C. to form a porous silicon wafer;

[0027] C) Soak the porous silicon wafer obtained in step B in bromocresol green solution with a concen...

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Abstract

Preparation method of ammonia-sensitive material for detecting ammonia concentration in air comprises the following steps: fixing the N type silicon slice in the electrolytic cell using dimethyl sulfoxide and hydrofluoric acid as electrolyte, silicon slice as anode, platinum electrode as cathode and performing electrolysis etching after setting a certain current intensity; making the etched silicon slice with undecenoic acid at 210 DEG C for 1 hour; steeping the porous silicon slice in the acid-base sensitive dye solution and then taking out and drying the steeped silicon slice to produce the ammonia-sensitive material. Compared with the prior technique, the preparation method has features of: 1) large specific surface area of porous material and high sensitivity; 2) normal temperature as operating temperature; 3) response time 40s, recovery time of not more than 1 min, quick signal response and recovery speed; 4) half-peak width of the ammonia-sensitive material within 10 nm and high resolution; 5) service life of 4 year; 6) compactness and facilitation for microminaturization and integration of the sensor.

Description

technical field [0001] The invention relates to an ammonia-sensitive material for detecting ammonia concentration, in particular to a preparation method of the ammonia-sensitive material for detecting ammonia concentration in air. Background technique [0002] At present, the detection principles of various sensors commonly used in the field of industrial environmental protection are different, and are mainly divided into three categories: (1) gas sensors using physical and chemical properties: such as semiconductor type (including surface control type, volume control type, surface potential type ), catalytic combustion type, solid thermal conduction type, etc.; (2) gas sensors using physical properties: such as heat conduction type, light interference type, infrared absorption type, etc.; (3) gas sensors using electrochemical properties: such as constant potential electrolysis Type, Galvanic battery type, diaphragm ion electrode type, fixed electrolyte type, etc. The appli...

Claims

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Application Information

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IPC IPC(8): G01N27/406
Inventor 邬建敏商云岭
Owner ZHEJIANG UNIV
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