Preparation method of ammonia-sensitive material for detecting ammonia concentration in air
An ammonia concentration and ammonia sensitivity technology, applied in the field of ammonia sensitive materials, can solve problems such as unsatisfactory stability, dispersion of component parameters, and product performance differences, and achieve the effect of fast signal response and recovery speed, miniaturization, and small size.
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Embodiment 1
[0014] A method for preparing an ammonia-sensitive material for detecting ammonia concentration in air, characterized in that the following steps are adopted:
[0015] A) The N-type silicon chip is fixed in the electrolytic cell, and hydrofluoric acid and dimethyl sulfoxide with a weight concentration of 40% are added as the electrolyte in a ratio of 1:1 by volume, with the silicon chip as the anode and the platinum electrode as the electrolytic solution. Cathode, for electrolytic etching, set the fluctuation range of current intensity to 35-100mA, each fluctuation period is 5 seconds, and the number of repeated fluctuations is 75 times. After the etching is completed, the silicon wafer is cleaned with ethanol for many times, and then dried with nitrogen ;
[0016] B) reacting the etched silicon wafer with undecylenic acid for 1 hour at 210° C. to form a porous silicon wafer;
[0017] C) Soak the porous silicon wafer obtained in step B for 30 minutes in a bromophenol blue sol...
Embodiment 2
[0019] A method for preparing an ammonia-sensitive material for detecting ammonia concentration in air, characterized in that the following steps are adopted:
[0020] A) N-type silicon wafers are fixed in the electrolytic cell, and hydrofluoric acid and dimethyl sulfoxide with a weight concentration of 40% are added as electrolytes in a volume ratio of 2:1, with the silicon wafers as the anode and the platinum electrode as the electrolytic solution. Cathode, for electrolytic etching, set the fluctuation range of current intensity to 35-100mA, each fluctuation period is 5 seconds, and the number of repeated fluctuations is 60 times. After the etching is completed, the silicon wafer is cleaned with ethanol several times, and then dried with nitrogen ;
[0021] B) reacting the etched silicon wafer with undecylenic acid for 1 hour at 210° C. to form a porous silicon wafer;
[0022] C) Soak the porous silicon wafer obtained in step B for 20 minutes in a bromothymol solution with ...
Embodiment 3
[0024] A method for preparing an ammonia-sensitive material for detecting ammonia concentration in air, characterized in that the following steps are adopted:
[0025] A) N-type silicon wafers are fixed in the electrolytic cell, and hydrofluoric acid and dimethyl sulfoxide with a weight concentration of 40% are added as electrolytes in a ratio of 4:1 by volume, with the silicon wafers as the anode and the platinum electrode as the electrolytic solution. Cathode, for electrolytic etching, set the fluctuation range of current intensity to 35-100mA, each fluctuation period is 5 seconds, and the number of repeated fluctuations is 30 times. After the etching is completed, the silicon wafer is cleaned with ethanol several times, and then dried with nitrogen ;
[0026] B) reacting the etched silicon wafer with undecylenic acid for 1 hour at 210° C. to form a porous silicon wafer;
[0027] C) Soak the porous silicon wafer obtained in step B in bromocresol green solution with a concen...
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