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Nano cerium oxide slurry for chemical mechanical polishing and preparation method thereof

A nano-cerium oxide and chemical mechanical technology, which is applied in the field of chemical mechanical polishing slurry for semiconductors and its preparation, can solve problems such as inapplicability, and achieve the effects of high wear resistance, narrow particle size distribution range, and high polishing selectivity

Active Publication Date: 2011-12-21
上海华明高纳稀土新材料有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

CN 1919949A also announces high-precision composite polishing liquid and its production method and application, but these slurries are not suitable for STI CMP process

Method used

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  • Nano cerium oxide slurry for chemical mechanical polishing and preparation method thereof
  • Nano cerium oxide slurry for chemical mechanical polishing and preparation method thereof
  • Nano cerium oxide slurry for chemical mechanical polishing and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Preparation of the 1st step nanometer cerium oxide powder

[0044] (1) Preparation of seed crystals: Heat 1L of oxalic acid solution with a concentration of 20g / L to a temperature of 70°C, add ammonia water with a weight concentration of 12.5% ​​until the pH is 5.5, and then add 0.2L of a cerium chloride solution with a concentration of 50g / L , react at 70°C for 0.5h, age for 2h, filter and wash to obtain cerium oxalate crystal seeds;

[0045] (2) Precipitation: Add 2.5g of cerium oxalate seed crystals and 17.5g of cetyltrimethylammonium bromide to 1L of cerium chloride aqueous solution with a concentration of 50g / L, and add the weight concentration while stirring at 50°C. Be 25% ammonium bicarbonate aqueous solution, until the pH value is 6, obtain the cerium carbonate of precipitation;

[0046] (3) Roasting: filter and wash the cerium carbonate with a centrifuge, dry in an oven at 70° C. for 6 hours, and bake the dried cerium carbonate at 600° C. for 4 hours.

[004...

Embodiment 2

[0053] Preparation of the 1st step nanometer cerium oxide powder

[0054] (1) Preparation of seed crystals: Heat 1 L of oxalic acid solution with a concentration of 50 g / L to a temperature of 70° C., add ammonia water with a mass concentration of 12.5% ​​until the pH is 4.5, and slowly add 0.15 L of cerium chloride with a concentration of 100 g / L Solution, react at 70°C for 1.5h, crystallize for 4h, filter and wash to obtain cerium oxalate crystal seeds;

[0055] (2) Precipitation: Add 22.5g cerium oxalate seed crystals in 1L concentration of 150g / L cerium nitrate aqueous solution, 15g polyethylene glycol 20000, under 70 ℃, add mass concentration while stirring and be 30% sodium bicarbonate and The mixed aqueous solution of sodium carbonate (the mass ratio of sodium bicarbonate and sodium carbonate is 5: 1), until pH value is 7, obtains the cerium carbonate of precipitation;

[0056] (3) Roasting: filter and wash the completed cerium carbonate with a centrifuge, dry at 120° C...

Embodiment 3

[0063] Preparation of the 1st step nanometer cerium oxide powder

[0064] (1) Preparation of seed crystals: Heat 1L of oxalic acid solution with a concentration of 20g / L to a temperature of 70°C, add ammonia water with a weight concentration of 12.5% ​​until the pH is 5.5, and then add 0.2L of a cerium chloride solution with a concentration of 50g / L , react at 70°C for 0.5h, age for 2h, filter and wash to obtain cerium oxalate crystal seeds;

[0065] (2) Precipitation: Add 2.5 g of cerium oxalate seed crystals, 15.5 g of cetyltrimethylammonium bromide, and 5 g of polyvinyl alcohol 20000 in 1 L of 50 g / L cerium acetate aqueous solution, at 50 ° C, While stirring, adding an aqueous ammonium bicarbonate solution with a weight concentration of 25% until the pH value is 6 to obtain precipitated cerium carbonate;

[0066] (3) Roasting: filter and wash cerium carbonate with a centrifuge, dry in an oven at 90° C. for 4 hours, and bake the dried cerium carbonate at 500° C. for 5 hours...

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Abstract

The invention discloses a nano-cerium oxide slurry for chemical mechanical polishing and a preparation method thereof. The nano-cerium oxide slurry contains the following components in parts by weight: 10-25 parts of an acidic pH regulator, 0.1-0.8 parts of a dispersant, Nano cerium oxide powder 74.2-89.8 parts. Compared with the prior art, the nano-cerium oxide polishing solution provided by the present invention has the advantages of small cerium oxide median particle size, narrow particle size distribution range, high wear resistance, high polishing selectivity, and high product precision.

Description

technical field [0001] The invention relates to a chemical mechanical polishing slurry for semiconductors and a preparation method thereof, in particular to a nano-cerium oxide polishing slurry suitable for STI CMP technology and a preparation method thereof. Background technique [0002] Chemical Mechanical Polishing (CMP) technology is a new technology developed by IBM in the mid-1980s. This method can truly flatten the entire silicon wafer surface. CMP technology is mainly used in the final processing of silicon wafers and the manufacture of precision optical systems in the semiconductor industry. Different from traditional pure mechanical or pure chemical polishing methods, CMP avoids the surface damage caused by pure mechanical polishing and the slow polishing speed, surface flatness and Disadvantages such as poor polishing consistency are widely accepted by the world's top ten IC (Integrate Circuit) manufacturers. [0003] In CMP technology, chemical mechanical polis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
Inventor 赵月昌吴秋芳高玮陈曦杨筱琼顾捐永张鹏李冉
Owner 上海华明高纳稀土新材料有限公司
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