Low-temperature solvent hot preparation method of indium tin oxide monodisperse nano powder

An indium tin oxide single and nano-powder technology, applied in the fields of nanostructure manufacturing, chemical instruments and methods, nanotechnology, etc., can solve the problems of product particle agglomeration, complex process flow, unfavorable application, etc., and achieves safe operation and simple equipment. , the effect of less pollution

Inactive Publication Date: 2010-01-13
JINAN UNIVERSITY
View PDF2 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] From the above-mentioned documents or patents, we can understand that various existing methods for preparing ITO powders have common disadvantages: whether it is chemical co-precipitation or hydrothermal method, two-step reactions are required, first at low temperature The precursor indium tin hydroxide is precipitated, and then calcined at 300-500°C to obtain ITO powder
The technological process is complicated; due to the need for calcination, the required temperature is very high; high-temperature calcination will inevitably cause serious particle agglomeration of the product, which is not conducive to the next application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) put 38g InCl 3 4H 2 O and 4.65 g SnCl 4 ·5H 2 O was first dissolved with 100mL hydrochloric acid to obtain a mixed solution;

[0026] (2) Add 4L ethylene glycol to the mixed solution obtained in step (1) as a solvent, and mix well;

[0027] (3) Under stirring, slowly add NH with a concentration of 25% by mass 3 ·H 2 0, adjust the pH value to 7.0, stir well, obtain the ethylene glycol suspension of indium tin hydroxide;

[0028] (4) Move the ethylene glycol suspension of indium tin hydroxide obtained in step (3) into a reaction kettle, and react for 2 hours at 200°C; After vacuum drying for 24 hours, the indium tin oxide monodisperse nano-powder product is obtained, which contains tin oxide with a concentration of 10% by mass. The prepared nano-ITO powder is observed under a scanning electron microscope with an average particle size of <100nm, and the particle size range measured by a nanometer particle size analyzer is 10-200nm.

Embodiment 2

[0030] (1) Put 49.5g In(NO 3 ) 3 4H 2 O, and 6.0g Sn(NO 3 ) 4 ·5H 2 O was first dissolved with 100mL nitric acid to obtain a mixed solution;

[0031] (2) Add 10L ethylene glycol to the mixed solution obtained in step (1) as a solvent, and mix well;

[0032] (3) In a stirring state, slowly drop sodium hydroxide to adjust the pH value to 7.0, and stir evenly to obtain an ethylene glycol suspension of indium tin hydroxide;

[0033] (4) Move the ethylene glycol suspension of indium tin hydroxide obtained in step (3) into a reaction kettle, and react for 4 hours at 200°C; After vacuum drying for 48 hours, the indium tin oxide monodisperse nano-powder product is obtained, which contains tin oxide with a concentration of 10% by mass.

Embodiment 3

[0035] (1) Dissolve 23.16g metal indium and 5.51g metal tin with 100mL sulfuric acid to obtain a mixed solution;

[0036](2) Add 2L ethylene glycol to the mixed solution obtained in step (1) as a solvent, and mix well;

[0037] (3) In a stirring state, adjust the pH value to 11.0 with potassium hydroxide, and stir evenly to obtain an ethylene glycol suspension of indium tin hydroxide;

[0038] (4) Move the ethylene glycol suspension of indium tin hydroxide obtained in step (3) into a reaction kettle, and react for 20 hours at 180°C; After vacuum drying for 48 hours, the indium tin oxide monodisperse nano-powder product is obtained, which contains tin oxide with a concentration of 20% by mass.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a low-temperature solvent hot preparation method of indium tin oxide monodisperse nano powder, comprising the following steps: the glycol suspension of indium tin hydroxide is put into a reaction kettle for low-temperature solvent hot reaction; after reaction ends, the obtained precipitate is centrifugated for separation, cleaned and dried to obtain indium oxide or indium tin oxide monodisperse nano powder; the low-temperature solvent hot reaction is carried out at the temperature of 180-300 DEG C for 0.5-20h. The invention uses simple low-temperature solvent thermosynthesis method to finish the reaction in one step, which has simple procedure and easy operation; in addition, the invention has low reaction temperature, no calcination, simple device, low cost, safe operation and little pollution; the average grain diameter of the prepared indium tin and ITO powder is smaller than 100nm, grain diameter distribution range is narrow and dispersity is favourable.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a low-temperature solvothermal preparation method of indium tin oxide (ITO) monodisperse nanometer powder. Background technique [0002] With the development of liquid crystal display, the demand for indium tin oxide (ITO) used for transparent electrodes has increased sharply. At present, developed countries in the world such as Japan, the United States, France, etc., use 90% of indium for the preparation of ITO materials. They generally use indium tin oxide to make the target, and then use the DC magnetron sputtering method to make the target into an ITO film. This film is transparent to visible light, can strongly reflect infrared light, and has low film resistance, so it has been increasingly widely used in liquid crystal displays, heat insulating glass, solar cells and collectors, and vehicle window defogging and anti-frost. For the ITO powder used in the pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00C01G19/00B82B1/00G02F1/1333G02F1/1343H01L31/18H01L31/0224F24J2/00C09K3/18
CPCY02E10/40Y02P70/50
Inventor 孟建新邓小玲
Owner JINAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products