Preparation method of zinc oxide varister

A technology of zinc oxide and varistors, applied in the direction of resistors, resistance manufacturing, varistor cores, etc., can solve the inability to create more ideal or more economical process conditions, limitations, inability to select high-impedance grain boundary layer components and Dosage and other issues

Active Publication Date: 2010-01-20
SFI ELECTRONICS TECH
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Problems solved by technology

[0005] However, in the same sintering process, the zinc oxide varistor preparation method that achieves the doping of zinc oxide grains and the formation of a high-resistance grain boundary layer between the grains has disadvantages in addition to the need for high-temperature sintering to complete the varistor with a crystalline phase. In addition to sintering the high-impedance grain boundary layer, it also brings various limitations to the performance control of zinc oxide varistors.
For example, in the sintering process, the conditions for doping ions in zinc oxide grains are limited, and the type and quantity of doping ions cannot be selected in a wider range. Therefore, the performance of zinc oxide varistors, including breakdown voltage, nonlinear coefficient , C value, leakage current, surge absorption capacity and ESD absorption capacity, etc., cannot be adjusted in a wider range
In the same way, during the sintering process, the conditions for forming a high-impedance grain boundary layer with a crystalline phase between zinc oxide grains are also limited, and in addition to creating more ideal or economical process conditions, it cannot be in a wider range. The composition and dosage of the high-impedance grain boundary layer are selected, so the performance of the zinc oxide varistor cannot be adjusted in a wider range.

Method used

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  • Preparation method of zinc oxide varister
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  • Preparation method of zinc oxide varister

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preparation example Construction

[0030] The preparation method of the zinc oxide varistor of the present invention includes the following steps:

[0031] a. Prefabricated zinc oxide crystal grains containing doped ions;

[0032] According to the principle of crystallography, a solution containing zinc ions and a solution containing doped ions are prepared, and then nanotechnologies such as coprecipitation method or sol-gel process are used to obtain the precipitate, which is then heated Decompose to prepare zinc oxide crystal grains containing doped ion components.

[0033] Zinc oxide crystal grains can be doped with one or more ionic components, wherein the doping amount of ionic components is less than 15 mol% of the zinc oxide content, but less than 10 mol% is a preferred embodiment, and less than 2 mol% is the best Examples.

[0034] The doping ion component of zinc oxide crystal grains is selected from silver (Ag), lithium (Li), copper (Cu), aluminum (Al), cerium (Ce), cobalt (Co), chromium (Cr), indium (In) ,...

Embodiment 1

[0059] A chemical co-precipitation method was used to prepare the zinc oxide crystal grain samples listed in Table 1 doped with a single ion component of 1 mol%. The sintering material code-named G1-00 is prepared by chemical co-precipitation method, and its composition and weight are as follows:

[0060]

[0061]

[0062] According to the zinc oxide grain sample: G1-00 sintered material, the weight ratio is 100:10 or 100:15 or 100:30, and then the mixture is uniformly mixed at 1000kg / cm 2 The pressure is pressed into a wafer, and then sintered at a sintering temperature of 1065°C for 2 hours, and then the silver electrode is completed at 800°C, and a wafer-type zinc oxide surge absorber is made. The pressure-sensitive properties of various zinc oxide varistors were measured, and the results are shown in Table 1.

[0063] It can be seen from Table 1 that when the same sintering material is used, the pressure-sensitive characteristics of the zinc oxide varistor will vary with the ty...

Embodiment 2

[0069] The chemical co-precipitation method was used to prepare the zinc oxide crystal grain samples listed in Table 2 doped with different mol% single ion components. The G1-00 sintered material prepared in Example 1 was used.

[0070] According to the zinc oxide crystal grain sample: G1-00 sintered material, the weight ratio is 100:10, and the wafer-type zinc oxide varistor is prepared under the same conditions as in Example 1, and then the pressure of various zinc oxide varistors is measured. Sensitive performance, the results are shown in Table 2.

[0071] It can be seen from Table 2 that when the zinc oxide crystal grains contain a single doping ion component and the same sintering material is used, the pressure-sensitive characteristics of the zinc oxide varistor will vary with the use of the doping ion component of the zinc oxide crystal grains. .

[0072] Therefore, the pressure-sensitive characteristics of the zinc oxide varistor can be adjusted by controlling the type and...

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Abstract

The invention relates to a preparation method of a zinc oxide varister, comprising two independent steps: preparing zinc oxide granules with doping ion components; and preparing a sintering material for coating the zinc oxide granules. According to the performance requirement of the varister, the doping components of the zinc oxide granules, the components of the high-impedance sintering material and preparation conditions are prepared in advance; finally, the zinc oxide granules and the high-impedance sintering material are evenly mixed according to a certain proportion, and the zinc oxide varister is prepared according to the conventional technology. The zinc oxide varister prepared by the preparation method not only has voltage-sensitive performance, but also has one or more functions of heat sensitivity, capacitance, inductance, piezoelectricity or magnetic characteristic, and the like, can sinter at low temperature (lower than 900 DEG C) and can use fine silver as an inner electrode.

Description

Technical field [0001] The invention relates to a method for preparing a zinc oxide varistor, in particular to a method for preparing a zinc oxide varistor in which the doping of zinc oxide and the high-resistance sintered material covering zinc oxide crystal grains are divided into two independent processes. Background technique [0002] The zinc oxide varistor (ZnO varistor) is based on zinc oxide, and adds bismuth (Bi), antimony (Sb), silicon (Si), cobalt (Co), manganese (Mn) and chromium (Cr) and other oxides. It is formed after high temperature sintering above 1000℃. Among them, during the high-temperature sintering process, the zinc oxide crystal grains will increase the semiconductivity due to the doping of bismuth (Bi), antimony (Sb), silicon (Si), cobalt (Co), manganese (Mn) and chromium (Cr) plasma. In addition, a high-resistance grain boundary layer with crystalline phase will be formed between zinc oxide crystal grains. [0003] Therefore, in the known preparation met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C17/00H01C17/30H01C7/112C04B35/453C04B35/622
CPCH01C7/112
Inventor 连清宏朱颉安郭政宗林居南徐至贤许鸿宗方廷毅黄兴祥
Owner SFI ELECTRONICS TECH
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