Diamond reinforced metal-base composite material for electronic packaging and preparation method thereof

A technology of diamond reinforced and composite materials, which is applied in the field of diamond reinforced metal matrix composite materials for electronic packaging and its preparation, can solve the problems of expensive preparation, high cost, poor mechanical properties of materials, etc., and achieves reduced thermal expansion coefficient and simple process operation. , the effect of improving thermal conductivity

Active Publication Date: 2010-02-17
WENZHOU HONGFENG ELECTRICAL ALLOY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its preparation methods are hot pressing, hot isostatic pressing and electric spark sintering and other compact methods. Its advantage is that it can obtain high density and good thermophysical properties. The disadvantage is that the above preparation methods are all High-cost preparation, difficult for large-scale application
At the same time, due to the lack of a good solution to the interface bonding problem, the mechanical properties of the material are poor.
[0009] In summary, the main difficulties in the research of diamond-reinforced metal matrix composites at home and abroad are: it is difficult to obtain high-density materials, the preparation cost is expensive, and the preparation methods are difficult to achieve industrial production

Method used

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  • Diamond reinforced metal-base composite material for electronic packaging and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Take the preparation of Ag-30% diamond with a thickness of 0.5mm as an example

[0033] First, 30% Ag powder, 30% diamond powder (150 μm in particle size) and 0.1% Cr powder are mixed and ball-milled, the ball-to-material ratio is 1:1, and the ball-milling time is 20 h;

[0034] Then the ball-milled powder is pressed into a green body under a pressure of 50 MPa;

[0035] The compact is infiltrated together with 39% Ag metal in an infiltration furnace, the infiltration temperature is 1250°C, the infiltration time is 5min / mm×0.5mm=2.5 minutes, and the atmosphere is a hydrogen atmosphere;

[0036]After the infiltration is completed, the sample is repressed on a four-column press at 500MPa for 1 minute to obtain a 30% diamond-reinforced silver-based composite material with a thermal conductivity of 550W / m.K and a thermal expansion coefficient of 8.5×10 -6 / K, the bending strength is 300MPa.

Embodiment 2

[0038] Take the preparation of Ag-90% diamond with a thickness of 200mm as an example

[0039] First, 5% Ag powder, 90% diamond powder (with a particle size of 1 μm) and 5% B powder are mixed and ball-milled, the ball-to-material ratio is 20:1, and the ball-milling time is 1 h;

[0040] Then the ball-milled powder is pressed into a green body under a pressure of 150MPa;

[0041] The compact is infiltrated together with 4% Ag metal in an infiltration furnace, the infiltration temperature is 1000°C, the infiltration time=2min / mm×200mm=400 minutes, and the atmosphere is a hydrogen atmosphere;

[0042] After the infiltration is completed, the sample is repressed on a four-column press at 100MPa for 10 seconds to obtain a 90% diamond-reinforced silver-based composite material with a thermal conductivity of 700W / m.k and a thermal expansion coefficient of 4.5×10 -6 / K, the bending strength is 450MPa.

Embodiment 3

[0044] Taking the preparation of Cu-30% diamond with a thickness of 0.5mm as an example

[0045] Firstly, 30% Cu powder, 30% diamond powder (with a particle size of 150 μm) and 0.1% Zr powder are mixed and ball-milled, the ball-to-material ratio is 1:1, and the ball-milling time is 20 h;

[0046] Then the ball-milled powder is pressed into a green body under a pressure of 50 MPa;

[0047] The compact is infiltrated together with 39% Cu metal in an infiltration furnace, the infiltration temperature is 1350°C, the infiltration time=5min / mm×0.5mm=2.5 minutes, and the atmosphere is a hydrogen atmosphere;

[0048] After the infiltration is completed, the sample is repressed on a four-column press at 500MPa for 1 minute to obtain a 30% diamond-reinforced copper-based composite material. The thermal conductivity of the material is 450W / m.K and the thermal expansion coefficient is 9.0×10 -6 / K, the bending strength is 350MPa.

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Abstract

The invention discloses a diamond reinforced metal-base composite material for electronic packaging and a preparation method thereof. The material comprises the following components by volume percent:30%-90% of diamond, 0.1%-5% of addition element and 10%-70% of metal substrate, wherein the addition element comprises one or more of Zr, Cr, Ti and B and the metal substrate comprises one metal of Ag, Cu and the like. The preparation method of the material comprises the following steps: mixing powder, pressing, infiltrating and pressing again. Owning to the adopted alloy element addition method,the wettability among phases is greatly improved. Therefore the material prepared by the method of the invention has better thermal conductivity, thermal expansion coefficient and mechanical properties compared with the former electronic packaging material and the adopted liquid phase infiltration method has the advantages of simple operation, low cost and capability of mass production.

Description

technical field [0001] The invention relates to the technical field of metal-matrix composite materials, in particular to a diamond-reinforced metal-matrix composite material for electronic packaging and a preparation method thereof. Background technique [0002] Electronic packaging is an operation process that rationally arranges, assembles, bonds, connects, isolates and protects the various components that constitute electronic devices or integrated circuits according to the specified requirements. It requires the packaging materials used to have high thermal conductivity. , and has a low thermal expansion rate, and plays the role of mechanical support, electrical connection, physical protection, external field shielding, stress relaxation, heat dissipation and moisture resistance, size transition and stable component parameters. Today, with the rapid development of microelectronics technology, the packaging density of semiconductor integrated circuits is increasing. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/10C22C1/05C22C32/00C22C29/02H01L21/50
Inventor 甘可可祁更新陈晓陈乐生
Owner WENZHOU HONGFENG ELECTRICAL ALLOY
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