Gate dielectric material cubical phase HfO2 film and preparation method thereof

Abstract

The invention relates to a gate dielectric material cubical phase HfO2 film and a preparation method thereof. A stable cubical phase HfO2 film is obtained by doping Y2O3, and the molar percentage of the doping amount of the Y2O3 is between 0 and 28. The HfO2 is in a cubical phase at normal temperature, and the dielectric constant is 27.2. The gate dielectric material cubical phase HfO2 film is prepared by using the cubical phase HfO2 ceramic target material stabilized by the Y2O3 by a pulse laser deposition technique under the conditions of high vacuum and low partial pressure of oxygen. The invention uses the method of pulse laser deposition, uses the metal oxide Y2O3 and the HfO2 as raw materials and uses the binary phase diagram of the two materials as a basis to obtain the cubical phase HfO2 which is stable at normal temperature by the high-temperature solid phase reaction at normal temperature, thereby remarkably improving the dielectric constant of the HfO2 at normal temperatureand preparing and obtaining a YSH film, the EOT value of which is less than 1.5 nm. The invention provides new vitality for the application of the HfO2 which is the most potential gate dielectric material in the future.

Description

technical field [0001] The invention belongs to the field of microelectronic materials, in particular to hafnium oxide HfO, a high dielectric constant gate dielectric material used in metal-oxide-semiconductor field effect transistor MOSFETs 2 Thin film, a gate dielectric material cubic phase HfO 2 Thin films and methods for their preparation. Background technique [0002] In 1947, Bardeen, Brattain, and Shockley invented solid-state components to replace electronic vacuum tubes, which marked the emergence of the microelectronics industry. Since the birth of solid components, the microelectronics industry has experienced four decades of unprecedented explosive growth, driven by two factors - the planar integrated circuits invented by Noyce and Kilby and the excellent performance of solid components due to scale reduction (size shrinkage). performance. Scaling down solid state components offers the rare combination of reduced cost, improved performance and power that gives...

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Problems solved by technology

In order to reduce the leakage current, the actual thickness of the gate dielectric layer should be increased, but the corresponding EOT will also increase

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