Integrated circuit resisting NMOS element total dose radiation based on materials with high dielectric constants

Abstract

The invention discloses an integrated circuit resisting NMOS element total dose radiation based on materials with high dielectric constants, belonging to the technical field of electronics. The integrated circuit resisting NMOS element total dose radiation comprises an NMOS element and can also comprise a PMOS element, wherein the elements are insulated by a groove on a substrate. The integrated circuit resisting NMOS element total dose radiation is characterized in that an interface material with a high dielectric constant exists between a groove filling material and a substrate material in the groove adjacent to the NMOS element. The dielectric constant of the interface material is preferably larger than 3.9. The interface material can be one or more selected from nickel oxide, zirconiumoxide, lead oxide, aluminum oxide, nitrogen oxide, lanthanum oxide, hafnium oxide and tantalum oxide. The invention can be applied to spaceflight, military, nuclear power, high energy physics and other industries relevant to total dose radiation.

Description

technical field [0001] The present invention relates to integrated circuits, in particular to a new type of integrated circuit based on high dielectric constant materials, which can greatly reduce the off-state leakage current of NMOS devices prepared by shallow trench isolation technology after total dose irradiation, and belongs to The field of electronic technology. Background technique [0002] Integrated circuit technology is being more and more widely used in industries related to total dose radiation, such as aerospace, military, nuclear power and high-energy physics. Moreover, with the continuous improvement of the integration level of integrated circuits, the size of semiconductor devices is decreasing day by day. Shallow trench isolation technology is becoming the mainstream technology for electrical isolation between devices in integrated circuits due to its excellent device isolation performance. However, due to the damage of the silicon dioxide oxide layer in t...

AI Technical Summary

Problems solved by technology

Before the main tube of the device is turned on, the main tube is in the off state, but at this time the parasitic tube has been turned on, and because the contact quality at the interface between the shallow trench isolation material silicon dioxide and the substrate is very good at this time, there are few interface states , the channel mobility of the parasitic tube is relatively large, and the electron movement speed is relatively fast, which will form a large off-state leakage current

This off-state leakage current will greatly increase the power consumption of the integrated circuit, and have a relatively large negative impact on the reliability of the integrated circuit, which has become a total dose radiation reliability problem that needs to be solved urgently at this stage.

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