Method for enhancing luminescence intensity of nano silicon/silicon dioxide luminescence component
A light-emitting device, silicon dioxide technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as poor controllability, damage to the active layer film, and difficulty in artificially modulating the size of the pyramid and its uniformity, and achieves injection efficiency. Improve, improve light extraction efficiency, enhance the effect of field emission effect
Inactive Publication Date: 2010-03-10
NANJING UNIV
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The above two methods improve the luminous efficiency of the device to a certain extent from the perspective of improving carrier injection and light extraction efficiency. The first method is to use PECVD technology to form a pyramidal rough surface on the substrate surface, which is compatible with the growth of the film. The method is consistent, so it is simple and easy to implement, but the controllability of this method is poor, and it is not easy to artificially modulate the distribution, size and uniformity of the pyramid
The second method prepares periodic amorphous silicon nitride columns above the electrodes, which effectively improves the light extraction efficiency, but this method is carried out after the film is prepared, and the photolithography and plasma etching used and other steps may damage the active layer film
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Embodiment 1
[0033] The specific steps of the method for improving the luminous intensity of nano-silicon / silicon dioxide light-emitting devices in this embodiment are as follows:
[0034] 1) Put the silicon substrate into the plasma etching equipment (SAMCO company, model RIN-10), use polystyrene beads with a micropore diameter of less than 200nm as a mask, and pass through CF 4 An etching gas source is used to perform plasma etching on the surface of the silicon substrate to obtain a nano-silicon substrate with an array-like distributed nano-silicon cone structure surface. The surface morphology of the arrayed nano-silicon cones is as follows: figure 1 shown. The specific equipment control parameters are: power source frequency: 13.56MHz, power: 30W, DC bias voltage: 40V, CF4 flow rate: 30±10sccm (standard-state cubic centimeterper minute), etching temperature: room temperature.
[0035] 2) After cleaning the nano-silicon substrate, put it between the electrodes of the plasma chemical ...
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Abstract
The invention relates to a method for enhancing the luminescence intensity of a nano silicon / silicon dioxide luminescence component, belonging to the technical field of semiconductor luminescence components. The method mainly comprises the following steps: taking a polystyrene pellet as a mask and carrying out plasma etching on the surface of a silicon substrate; depositing a plurality of layers of a-Si:H / SiO2 films on the surface of a silicon cone structure of the nano silicon substrate; and then, putting into an annealing furnace, completing dehydrogenation annealing, quick thermal annealingand stable-state high-temperature annealing sequentially to obtain an nc-Si / SiO2 film with a preset period. The invention has the following main advantages: the rough surface of a silicon cone in anarray type enhances the field emission effect, thereby the injection efficiency of a current carrier is enhanced, the light extraction efficiency of the component is enhanced, the leakage current andthe power consumption of the component are restricted, the quality of the film can not be influenced, the operation is simple, the technique is reliable, parameters can be accurately regulated, and the invention has very good controllability and repeatability.
Description
technical field [0001] The invention relates to a method for increasing the luminous intensity of a nano-silicon / silicon dioxide light-emitting device, especially a method for improving the luminous intensity of a nano-silicon / silicon dioxide multilayer film light-emitting device by using an ordered nano-pattern substrate, which belongs to semiconductor light-emitting device technology field. Background technique [0002] Silicon-based semiconductors are the cornerstone of the modern microelectronics industry. With the continuous development of microelectronics technology, the size of devices has been reduced day by day, and has now entered the nanometer level. Therefore, the research on the preparation, performance and device application of silicon-based nanomaterials has become a frontier and hot topic in the world. On the other hand, with the continuous shrinking of the size, although the logic switching speed has been increased by an order of magnitude, it is limited by...
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IPC IPC(8): H01L33/00
Inventor 徐骏陈德媛刘宇徐岭陈坤基李伟黄信凡马忠元韦德远孙红程戴明
Owner NANJING UNIV