New method for realizing efficient electrofluorescence and low threshold laser

Abstract

The invention belongs to the field of semiconductor optoelectronic materials and device technology, and relates to a new method for realizing efficient electrofluorescence and low threshold laser. The method comprises the following steps: utilizing a p-type material and an n-type material which have the same crystal structure and similar lattice constants, and taking the p-type material as a hole source of the n-type material; through the design of an energy band, regulating an energy band structure between the p-type material and the n-type material by adopting a dielectric layer to control the transport property of a current carrier, and accumulating electrons in an n-type material layer to form a hole and injecting electrons to the n-type material layer from the p-type material so as to realize the efficient electrofluorescence and low-threshold later emission in the n-type material. The new method for realizing the efficient electrofluorescence and the low threshold laser is suitable for heterojunction growth and device preparation of II-VI group semiconductor material, III-V group semiconductor material and other semiconductor materials with wide band gap, is a simple and practicable method for realizing semiconductor luminescence, expands the range for preparing high-efficiency luminescent devices greatly, and opens a new way for the research and the preparation of the luminescent devices.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor optoelectronic materials and device technology, and relates to a new method for realizing high-efficiency electroluminescence and low-threshold laser. Background technique

[0002] Zinc oxide is an important wide-bandgap semiconductor material with an energy gap width of about 3.37 eV at room temperature and an exciton binding energy as high as 60 meV. Due to its large exciton binding energy, it is expected to achieve high-efficiency blue-violet emission and low-threshold lasing at room temperature or even higher temperatures. Therefore, ZnO has become the frontier and hotspot of international optoelectronics research. In addition, compared with other wide-bandgap materials such as ZnSe, GaN, and SiC, ZnO has the advantages of high chemical and thermal stability, better resistance to radiation damage, lower growth temperature, and suitability for long-life devices. .

[0003] At present, a...