Method for preparing copper barrier layer-seed crystal layer film

Abstract

The invention discloses a method for preparing a copper barrier layer-seed crystal layer film, which includes the steps of forming a through hole and a groove on a substrate at first, and performing deaeration treatment on the through hole and the groove; then depositing a tantalum nitride film and an antalum film; performing ion sputtering and finally depositing a seed crystal layer. The pre-cleaning step and re-sputtering step can be omitted through the ion sputtering step, which simplifies process and equipment and cannot generate pollution to the substrate. The method for preparing the copper barrier layer-seed crystal layer film can be applied to an interconnection process between copper and dual damascene with technical nodes below 45nm to expand the technical nodes below 32nm and avoid the expenses for updating ship manufacturing equipment when expanding to smaller technical nodes.

Description

technical field [0001] The invention relates to a semiconductor processing technology, in particular to a method for preparing a copper barrier layer-seed layer thin film. Background technique [0002] As the dimensions of CMOS transistors continue to shrink to the sub-micron level, the number of transistors in high-efficiency, high-density integrated circuits rises to tens of millions. The signal integration of these large number of active components requires high-density metal wiring, but the resistance and parasitic capacitance brought by these metal interconnections have become the main factors limiting the speed of this efficient integrated circuit. [0003] At present, the semiconductor industry uses metal copper interconnection wires, which reduces the resistance between metal wiring layers and enhances circuit stability; at the same time, low dielectric constant dielectric materials are used instead of silicon dioxide as the insulating medium between metal layers, re...

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Problems solved by technology

[0014] The barrier layer deposition chamber technology is complex and expensive. At the same time, the increase in particles caused by the addition of tantalum heavy sputtering coils reduces the production yield of the system; the equipment for realizing the reactive pre-cleaning technology has a complex structure and high prices; reaction, the possibility of contamination of the substrate is relatively high

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