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Method for preparing light absorption layer for CuInGaSe thin film solar cell

A thin-film solar cell and copper indium gallium selenide technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of flammability, large consumption of reactants, and difficulty in control, and achieve improved film performance, simple equipment, and responsive The effect of low material consumption

Inactive Publication Date: 2010-07-07
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

where H 2 Se or H 2 The CIGS compound semiconductor thin film prepared by S gas has a high conversion efficiency of the CIGS thin film solar cell, but the H 2 Se or H 2 S is a highly toxic gas and is flammable, which has very high requirements for storage and operation, which seriously affects the practical application of this method.
Chinese patent CN1719625 discloses the use of solid source selenization or sulfuration method to pre-evaporate selenium or sulfuration, that is, first evaporate a layer of selenium or sulfur on the surface of the metal prefabricated layer, and then heat the metal prefabricated layer by irradiating the halogen tungsten lamp to prepare the CIGS absorbing layer , the method consumes a lot of reactants and is not easy to control

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Magnetron sputtering is used to deposit 1 μm thick metal Mo on ordinary soda-lime glass, and then a double target consisting of a CuIn alloy target with an atomic ratio of 0.9:1 and a CuGa alloy target with an atomic ratio of 0.6:1 is used on the Mo film to sputter separately. Spray deposition of 0.6μm-1.0μm copper indium gallium metal prefabricated layer. Put the prefabricated layer and solid selenium Se reactants in a high-temperature glass tube, and when the mechanical pump is used to evacuate to below 10Pa, the container is sealed with a flame of liquefied petroleum gas or acetylene and oxygen. Put the sealed tube into a temperature-controlled furnace, first raise the temperature to 250°C at a constant speed of 50°C / min, and keep it for 5 minutes, then raise the temperature to above 430°C at a speed of 100°C / min, and react after the temperature reaches 555°C, and keep it for 13 minutes As above, after the reaction is completed, the temperature is lowered to 250°C at...

Embodiment 2

[0021] Metal Mo with a thickness of 1 μm was deposited on the titanium thin film by magnetron sputtering, and then a double target consisting of a CuIn alloy target with an atomic ratio of 0.9:1 and a CuGa alloy target with an atomic ratio of 0.6:1 was used for sputtering deposition on the Mo thin film. 0.6μm-1.0μm copper indium gallium metal prefabricated layer. Put the prefabricated layer and solid selenium Se reactants in a high-temperature glass tube, and when the mechanical pump is used to evacuate to below 10Pa, the container is sealed with a flame of liquefied petroleum gas or acetylene and oxygen. Put the sealed tube into a temperature-controlled furnace, first raise the temperature to 250°C at a constant speed of 50°C / min, and keep it for 5 minutes, then raise the temperature to above 430°C at a speed of 100°C / min, and react after the temperature reaches 555°C, and keep it for 13 minutes As above, after the reaction is completed, the temperature is lowered to 250°C at...

Embodiment 3

[0023] The solid-state sulfur reactant was used to replace the solid-state selenium in Example 1, and the others were the same as in Example 1, and finally a light-absorbing layer for copper indium gallium sulfur solar cells was obtained.

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Abstract

The invention relates to a method for preparing a light absorption layer for a CuInGaSe thin film solar cell. A Cu, In and Ga precast layer is sputtered on an Mo-plated substrate by adopting a vacuum magnetron sputtering method of the known technology. The method is characterized by comprising the preparation processes of packing, heating and cooling so as to prepare the absorption layer for the CuInCaSe thin film solar cell. Because of the adoption of a closed vacuum selenylation or vulcanization method, the solid selenium source or sulfur source is thoroughly, fully and uniformly selenylated or vulcanized; and the precast layer is transformed into the CuInGaSe or CuInGaS light absorption layer so as to effectively improve the thin film performance of the absorption layer, meet the requirement of the thin film solar cell, avoid using toxic gas such as H2Se or H2S and the like and facilitate environmental protection. The photoelectric conversion efficiency of the thin film solar cell prepared by adopting the absorption layer can reach 10.5 percent; and the equipment is simple, the consumption of reaction substances is low and the method is suitable for industrialized production.

Description

technical field [0001] The invention belongs to the technical field of preparation of thin-film solar cell materials, and in particular relates to a method for preparing a light-absorbing layer for a copper indium gallium selenide thin-film solar cell. Background technique [0002] The basic structure of copper indium gallium selenide series (including copper indium gallium selenide CIGS, copper indium gallium sulfide CIGS, copper indium gallium selenide sulfide CIGSS) thin film solar cells is: substrate / metal back electrode / light absorbing layer / buffer layer / window layer / Transparent electrode layer / metal grid electrode / anti-reflection layer, among which the light absorption layer plays a decisive role in the performance of solar cells. [0003] The compound semiconductor copper indium gallium selenide series of chalcopyrite structure is used as the thin-film solar cell of the light absorbing layer, which is considered to be one of the very promising compound cells. Copper...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 赵彦民方小红王庆华李巍
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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