Nano-composite phase change material, preparation method thereof and application thereof as phase change memory

Abstract

The invention provides a nano-composite phase change material, a preparation method thereof and application thereof as a phase change memory. The nano-composite phase change material comprises the following components in percentage by weight: 8 to 36 percent of Ta2O5 and 64 to 92 percent of phase change material. Due to the uniform composition of the phase change material and the Ta2O5 in nanometer scales, on one hand, the growth of the phase change material crystalline grains is inhibited in the existence of Ta2O5 so that the resistivity is improved and the crystallizing temperature of the material is increased and the heat stability of the material is improved; and on the other hand, the heat conductivity of the material is reduced due to the increment of crystal boundary density, and the dielectric constant of the material is increased due to the introduce of Ta2O5, which is favorable for reducing the threshold voltage of appliances. A novel nano-composite phase change film is applied to the memory so as to reduce the RESET voltage of the phase change memory device, contribute to realizing high-density storage, improve the heating efficiency of the phase change memory in the programming process, reduce the power consumption, improve data maintaining property, fatigue property and anti-irradiation capacity and the like.

Description

Technical field [0001] The invention relates to a nanocomposite phase change material, a preparation method thereof, and its use as a phase change memory. Background technique [0002] Phase change memory (C-RAM) is a new type of semiconductor memory. Compared with a variety of existing semiconductor memory technologies, including conventional volatile technologies, such as static random access memory (SRAM), dynamic random access memory (DRAM) ), etc., and non-volatile technologies, such as dielectric random access memory (FeRAM), electrically erasable programmable read-only memory (EEPROM), flash memory (FLASH), etc., which are nonvolatile and have long cycle life >10 13 Times), small component size, low power consumption, multi-level storage, high-speed reading, anti-radiation, high and low temperature resistance (-55-125℃), anti-vibration, anti-electronic interference and simple manufacturing process (can be compared with existing The integrated circuit technology matches...

AI Technical Summary

Problems solved by technology

At present, in the research of phase change materials, SiO has been reported 2 with Ge 2 Sb 2 Te 5 composite of phase change materials, but due to the SiO 2 Smaller dielectric constant and lower carrier mobility of the composite, SiO 2 with Ge 2 Sb 2 Te 5 Composite phase change materials have higher threshold voltages

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