Preparation method of rare earth ion-doped Lu2O3 light-emitting film

A technology of rare earth ions and light-emitting films, applied in light-emitting materials, chemical instruments and methods, etc., can solve problems such as non-uniform capillary stress, uneven pore size distribution, and film cracking

Inactive Publication Date: 2010-08-11
SHANGHAI UNIV
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AI Technical Summary

Problems solved by technology

[0005] The preparation of thin films by sol-gel method requires at least three stages: sol film formation, drying to form a gel film, and sintering to form an oxide film. If a film with a certain thickness is required, it needs to be repeatedly spin-coated to form a film. The oxide film is obtained, and the drying process of the film is accompanied by the volatilization of the solvent, forming a large number of capillaries with uneven pore size distribution, resulting in non-uniform capillary stress, and the stress between the film and the substrate due to shrinkage, which makes the film easy to crack. Cracking is more likely to occur if the film formed in one pass is too thick

Method used

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  • Preparation method of rare earth ion-doped Lu2O3 light-emitting film
  • Preparation method of rare earth ion-doped Lu2O3 light-emitting film
  • Preparation method of rare earth ion-doped Lu2O3 light-emitting film

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Embodiment 1

[0031] 5g LuCl 3 ·6H 2 O powder was added into 50ml of absolute ethanol, and stirred at 100°C for 2h to completely dissolve the powder to obtain a transparent solution. Thereafter, 2.5 g of polyethylene glycol (molecular weight 6000), 6.5 g of citric acid and 6 ml of water were added and stirred at room temperature for 2 h to obtain a transparent sol. According to the concentration requirement, add 0.7ml Eu(NO 3 ) 3 The solution (0.916mol / L) was added to the sol and stirred for about half an hour to obtain the required precursor sol.

[0032] The Si single wafer used to grow thin films needs to be ultrasonically cleaned with ethanol and deionized water for 20 minutes, and then soaked in a mixture of concentrated sulfuric acid and concentrated phosphoric acid (volume ratio: 3:1) for 24 hours to remove impurities on the surface of the silicon wafer. . The pre-configured sol was dropped onto the surface of the Si substrate, and the colloid was evenly coated on the substrate ...

Embodiment 2

[0042] 5g LuCl 3 ·6H 2 O powder was added into 40ml of absolute ethanol, and stirred at 100°C for 2h to completely dissolve the powder to obtain a transparent solution. Thereafter, 2.5 g of polyethylene glycol (molecular weight 6000), 6.5 g of citric acid and 5 ml of water were added and stirred at room temperature for 2 h to obtain a transparent sol. According to the concentration requirement, add 2.6ml Tb(NO 3 ) 3 The solution (0.048mol / L) was added to the sol and stirred for about half an hour to obtain the required precursor sol.

[0043] The Si single wafer used to grow thin films needs to be ultrasonically cleaned with ethanol and deionized water for 20 minutes, and then soaked in a mixture of concentrated sulfuric acid and concentrated phosphoric acid (volume ratio: 3:1) for 24 hours to remove impurities on the surface of the silicon wafer. . The pre-configured sol was dropped onto the surface of the Si substrate, and the colloid was evenly coated on the substrate ...

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Abstract

The invention relates to a preparation method of a rare earth ion-doped Lu2O3 light-emitting film, which adopts a Pechini sol-gel method and the spin coating technology to prepare a Lu2O3 film, and takes LuCl3.6H2O as the raw material, citric acid (C6H8O7) as the chelating agent and polyethylene glycol (PEG) as the cross-linking agent. The precursor sol film is heat-treated by a one-step pre-heating treatment method, so the method effectively prevents the film from crazing. A uniform and compact polycrystalline lutetium oxide light-emitting film can be obtained by repeating the spin coating-drying process for 3-30 times and calcining at 550-1000 DEG C for 1 hour, wherein the thickness of the film is 120nm-2mu m, the grain size is 15-50nm, and the emission wavelength changes along with the doped ion components.

Description

technical field [0001] The invention relates to a uniform and crack-free rare earth ion doped Lu 2 o 3 The invention discloses a method for preparing a luminescent film, belonging to the technical field of luminescent film preparation. Background technique [0002] Lu 2 o 3 It is a new type of scintillator matrix material, which has a cubic ferromanganese structure, belongs to the Ia3 space group, and has stable physical and chemical properties. Due to the extremely high atomic number Z(71) of lutetium and Lu 2 o 3 Extremely high density (~9.4g / cm 3 ), which makes its ability to stop ionizing radiation unusually high, and the energy band gap between the valence band and the conduction band is very wide (6.5ev), which can accommodate the emission of many activator ions such as Eu, Tb, Tm, Dy, Er, etc. energy level. Based on these advantages, in recent years, Lu 2 o 3 Scintillation and lasing materials for substrates have attracted widespread attention. [0003] Cur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/78
Inventor 施鹰谢杰谢建军邱华军王剑
Owner SHANGHAI UNIV
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