Photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector

A composite medium and detector technology, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as high dark current noise, extremely high process control requirements, and difficulty in further shrinking pixels.
CN101807547AActive Publication Date: 2010-08-18NANJING UNIV +1
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
NANJING UNIV
Publication Date
2010-08-18

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Abstract

The invention relates to an arrangement method of a photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector. Each unit detector has a structure that N-shaped semiconductor regions are respectively arranged at both upper sides of a P-shaped semiconductor material of a substrate, two insulated dielectric material layers and a control grid electrode are respectively arranged over the substrate, a photoelectron storage layer is arranged between the two insulated dielectric material layers, the second insulated dielectric in contact with the control grid is made of a material preventing charges stored in the photoelectron storage layer from flowing into the grid electrode, a source electrode and a drain electrode are in suspended structures when photoelectrons are collected and stored to the photoelectron storage layer, the first insulated dielectric is a bottom dielectric and adopts silica, SiON or other dielectric materials with high dielectric constants, the second insulated dielectric layer is made from a top dielectric and adopts silica / silicon nitride / silica, silica, alumina or other dielectric materials with high dielectric constants, and the substrate layer or the grid electrode surface is provided with at least one transparent or semi-transparent window for detecting the wavelength of the detector.
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Description

1. Technical field

[0001] The invention relates to an imaging detection device, especially the structure, working mechanism, setting and operation method of an imaging detection device in the infrared, visible light band to ultraviolet band. 2. Background technology

[0002] The currently developed imaging detection devices are mainly CCD and CMOS-APS. The basic working principle of CCD devices is related to the physical mechanism of metal-oxide-silicon (MOS) capacitors. The basic unit of CCD is MOS capacitors, and its working process is mainly signal Charge generation, storage, transfer and detection. CCD is a device that stores and transfers signals in the form of charge packets. Its outstanding feature is that it uses charges as signals, which is different from other devices that use current or voltage as signals. When the CCD is working, the clock pulse voltage is used to generate and control the change of the semiconductor potential well, thereby realizing the storage ...

Claims

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