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Method for preparing iron thin film

A thin film and sputtering technology, which is applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problems of high cost of high-purity iron target and high cost of industrial production, and achieve high crystal quality, low production cost, high The effect of purity

Active Publication Date: 2012-05-30
XINJIANG TENGXIANG MAGNESIUM PROD CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

When using a high-purity iron target, which is a ferromagnetic sputtering target, the requirements for the sputtering source are relatively high, and an electromagnetic sputtering source or a magnetically enhanced permanent magnet sputtering source is required; The degree of sputtering on the surface of the target is uneven, and the part preferentially sputtered by ions will be exhausted in advance, and the magnetron target needs to be replaced from time to time. However, due to the high cost of high-purity iron targets, the cost of industrial production is relatively high.

Method used

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  • Method for preparing iron thin film
  • Method for preparing iron thin film
  • Method for preparing iron thin film

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preparation example Construction

[0027] The invention discloses a method for preparing an iron thin film, which is characterized in that it comprises:

[0028] Put the substrate into a vacuum of 2 x 10 -5 ~1×10 -4 The growth chamber of the magnetron sputtering apparatus of Pa;

[0029] with Fe 2 o 3 The ceramic target is a sputtering target, and H is introduced into the growth chamber 2 A mixed gas of Ar and Ar is used to sputter an iron thin film on the substrate at a pressure of 0.4-1Pa and a temperature of 400-600°C, and the H 2 The volume ratio of Ar and Ar is 0.9-2:10.

[0030] After placing the substrate into a vacuum of 2 x 10 -5 ~1×10 -4 Before the growth chamber of the magnetron sputtering instrument of Pa, the substrate is preferably cleaned, specifically, the substrate is routinely cleaned with organic solvents, acid and deionized water, and dried with high-purity nitrogen. The vacuum degree is preferably 1×10 -4 Pa. The substrate can be Al 2 o 3 substrate.

[0031] According to the pr...

Embodiment 1

[0045] Preparation of Fe2O3 ceramic target:

[0046] The raw material is Fe with a purity of 99.99%. 2 o 3 Powder 26g, drop an appropriate amount of polyvinyl alcohol with a mass concentration of 2.5% into the powder, fully grind and granulate;

[0047] Fe after the above-mentioned grinding and granulation 2 o 3 Put it into a circular mold and pressurize to obtain a disc-shaped block;

[0048] Will Fe 2 o 3 Put the block into a box-type furnace, first raise the temperature to 500°C, keep it warm for 12 hours, and fully remove the glue; then repeatedly sinter at 950°C for 12 hours each time to obtain the target;

[0049] Polish both sides of the target with sandpaper to remove the diffusion layer between the target and the corundum pad during sintering, and make the surface of the disc target smooth.

Embodiment 2

[0051] First, organic solvent, acid, and deionized water were used to treat Al 2 o 3 The substrate was routinely cleaned, dried with high-purity nitrogen, and the Al 2 o 3 The substrate is fixed on the sample holder and put into the growth chamber;

[0052] Vacuum the growth chamber so that the vacuum degree of the growth chamber backside is better than 1×10 -4 Pa;

[0053] to Al 2 o 3 The substrate is heat-treated at 650°C for 20 minutes;

[0054] Introduce H into the growth chamber 2 mixed gas with Ar, the H 2 The volume ratio with Ar is 15%, the flow rate is 40 ml / min, and the substrate temperature is 500° C., and the gate valve is adjusted to keep the sputtering chamber pressure at 0.5 Pa. Fe prepared in Example 1 2 o 3 The ceramic target is the sputtering target, and the ordinary permanent magnet type sputtering source is the sputtering source for thin film sputtering.

[0055] Such as figure 1 As shown, the XRD measurement results show that all Fe thin films ...

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Abstract

The embodiment of the invention discloses a method for preparing an iron thin film. In the preparation method, Fe2O3 ceramic target is used as a sputtering target, magnetron sputtering deposition equipment is adopted, a mixed gas of Ar and H2 is used as a sputtering and reducing gas, and the iron thin film is prepared by selecting a proper H2 to Ar ratio, a deposition temperature and a growth chamber pressure. As the Fe2O3 target is not a ferromagnetic material, the sputtering source may be a common permanent magnetic sputtering source other than a special sputtering source. Meanwhile, high-purity Fe2O3 is easier to obtain than high-purity elementary iron. In addition, the production cost of the Fe2O3 target is low, which is favorable for industrial production. Experiment results show that the iron thin film prepared by the invention has high crystallization quality and repeatability.

Description

technical field [0001] The invention relates to the technical field of thin films, and more specifically, relates to a method for preparing iron thin films. Background technique [0002] Spintronics is an indispensable branch of the current information science field. Spin devices use the spin of electrons as the information carrier. Compared with traditional magnetic devices and microelectronic devices, they have stronger functions, higher speed, With less power consumption and higher integration, it shows broad application prospects in the fields of magnetic storage and quantum computing. High-efficiency spin sources are key components in spin devices, usually composed of magnetic metals and their alloys, as well as oxide films. Fe is one of the magnetic elements in the transition group. Its simple substance and many alloys and compounds are ferromagnetic materials with good performance. At present, Fe-based spin materials are a hot research topic. [0003] The magnetron ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/14C23C14/35
Inventor 孟健武晓杰刘孝娟吕敏峰邓孝龙
Owner XINJIANG TENGXIANG MAGNESIUM PROD CO LTD