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Preparation method of SiC/Al composite material for electronic packaging

A composite material and electronic packaging technology, applied in the field of electronic packaging materials, can solve the problems of non-wetting of SiC particles, limited development and application, high viscosity of molten aluminum liquid, etc., achieve excellent performance, reduce material cost, and improve wettability Effect

Inactive Publication Date: 2011-09-21
XIAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, since the volume fraction of SiC in the SiC / Al composite material for electronic packaging materials is required to be more than 55%, and the molten aluminum has a high viscosity and a large surface tension, it is almost non-wetting with SiC particles, so conventional stirring casting, powder metallurgy, etc. cannot be used. The method of preparation usually requires the help of complex processes and expensive equipment, which greatly increases the cost of the material and limits its development and application.

Method used

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  • Preparation method of SiC/Al composite material for electronic packaging
  • Preparation method of SiC/Al composite material for electronic packaging
  • Preparation method of SiC/Al composite material for electronic packaging

Examples

Experimental program
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Effect test

Embodiment 1

[0029] (1) be that the mass fraction is the polyvinyl alcohol aqueous solution of 4% and the SiO that mass fraction is 30% 2 The sol is mixed at a volume ratio of 1:1 to make a binder;

[0030] (2) Using β-SiC particles with a particle size of 50 μm and β-SiC with a particle size of 10 μm in a mass ratio of 10:1, the binder and β-SiC particles are mixed in a mass ratio of 5:100 Evenly, granulate, put into a cylindrical steel mold and press into a green body under a pressure of 55MPa;

[0031] (3) Place the green body in a drying oven, dry at 120°C for 2 hours, then deglue at 250°C and 450°C for 1 hour, and then put it in a resistance furnace at a rate of 30°C / min Raise the temperature to 1200°C, keep it warm for 1 hour, and then cool down with the furnace to obtain a SiC preform with a porosity of 30%;

[0032] (4) aluminum blocks with a mass purity of 99.7%, magnesium blocks with a mass purity of 99.5%, and silicon blocks with a mass purity of 99% are placed in an induction...

Embodiment 2

[0036] (1) the mass fraction is 2% polyvinyl alcohol aqueous solution and the mass fraction is 40% SiO 2 The sol is mixed at a volume ratio of 1:1 to make a binder;

[0037](2) Using β-SiC particles with a particle size of 50 μm and β-SiC with a particle size of 10 μm in a mass ratio of 10:3, the binder and β-SiC particles are mixed in a mass ratio of 3:100 Mix evenly, granulate, put into a cylindrical steel mold and press into a green body under a pressure of 30MPa;

[0038] (3) Place the green body in a drying oven, dry at 180°C for 1 hour, then deglue at 250°C and 450°C for 1 hour, and then put it in a resistance furnace at a rate of 50°C / min Raise the temperature to 1100°C, keep it warm for 2 hours, and then cool down with the furnace to obtain a SiC preform with a porosity of 42%;

[0039] (4) aluminum blocks with a mass purity of 99.7%, magnesium blocks with a mass purity of 99.5%, and silicon blocks with a mass purity of 99% are placed in an induction furnace at a mas...

Embodiment 3

[0043] (1) be that the polyvinyl alcohol aqueous solution of 5% and the SiO of 38% by mass fraction 2 The sol is mixed at a volume ratio of 1:1.5 to make a binder;

[0044] (2) Using β-SiC particles with a particle size of 50 μm and β-SiC with a particle size of 10 μm in a mass ratio of 10:2, the binder and β-SiC particles are mixed in a mass ratio of 4:100 Evenly, granulate, put into a cylindrical steel mold and press into a green body under a pressure of 80MPa;

[0045] (3) Place the green body in a drying oven, dry at 140°C for 2 hours, then deglue at 250°C and 450°C for 1 hour, and then put it into a resistance furnace at a rate of 10°C / min Raise the temperature to 1150°C, keep it warm for 2 hours, and then cool down with the furnace to obtain a SiC preform with a porosity of 36%;

[0046] (4) aluminum blocks with a mass purity of 99.7%, magnesium blocks with a mass purity of 99.5%, and silicon blocks with a mass purity of 99% are placed in an induction furnace at a mass...

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Abstract

The invention discloses a preparation method of a SiC / Al composite material for electronic packaging, which comprises the following steps: 1) mixing polyvinyl alcohol solution with saturated SiO2 sol for preparing a binder; 2) adding the binder into beta-SiC particles, mixing, granulating, carrying out die pressing, and preparing a green body; 3) drying the green body, carrying out binder removal, increasing the temperature, keeping the temperature, then carrying out furnace cooling, and preparing a SiC preform; 4) preparing an alloy; and 5) placing the preheated SiC preform into the molten alloy for impregnation and preparing the SiC / Al composite material. The preparation process is simple and does not need complex and expensive equipment, and the impregnation process does not need conditions on vacuum, pressure and atmosphere protection. The preparation method is simple, the requirements on the equipment are low, and the thermophysical property of the prepared material can be regulated within a relatively wide range, thereby being capable of meeting the electronic packaging requirements.

Description

technical field [0001] The invention belongs to the field of electronic packaging materials, and in particular relates to a preparation method of a SiC / Al composite material for electronic packaging. Background technique [0002] The development of semiconductor technology is changing with each passing day. Since the first semiconductor integrated circuit came out in 1958, so far, the development of IC chip integration is getting higher and higher, and the power is getting higher and higher, and the increase in integration will inevitably lead to its heating rate. As the temperature rises, the operating temperature of the circuit continues to rise, which leads to an increase in the failure rate of components. Therefore, it is particularly important to research and prepare new packaging materials with high thermal conductivity and good comprehensive performance. [0003] In order to meet the requirements of high-density, miniaturized, and high-power integrated circuits, ideal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22D19/14C22C21/00
Inventor 王晓刚黄俊朱明
Owner XIAN UNIV OF SCI & TECH
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