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Method for preparing plumbum magnesium niobate-plumbum titanate ferroelectric film

A ferroelectric thin film, lead magnesium niobate technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of inferior crystalline quality and performance of the thin film, achieve good ferroelectric performance and simple preparation process , The effect of low preparation cost

Inactive Publication Date: 2012-07-11
SHANGHAI NORMAL UNIVERSITY
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  • Description
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  • Application Information

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Problems solved by technology

Some researchers have prepared PMN-PT ferroelectric thin films on silicon substrates, but the crystalline quality and performance of the thin films are significantly inferior to those prepared on oxide single crystal substrates.

Method used

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  • Method for preparing plumbum magnesium niobate-plumbum titanate ferroelectric film
  • Method for preparing plumbum magnesium niobate-plumbum titanate ferroelectric film
  • Method for preparing plumbum magnesium niobate-plumbum titanate ferroelectric film

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Embodiment Construction

[0041] Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail:

[0042]figure 1 are the substrate temperatures are room temperature 200 o C. 450 o C. 500 o C. 550 o C. 600 o C. 650 o X-ray diffraction pattern of PMN-PT film grown at C. It can be seen from the figure that when the substrate temperature is lower than 450 o At C, the film contains a small amount of pyrochlore phase and is basically amorphous. When the substrate temperature reaches 500 - 600 o At C, a PMN-PT film with a (110) preferred orientation and a pure perovskite structure appears, and the preferred orientation degree can reach 71%. When the substrate temperature is 500 o At C, the (110) diffraction peak of the PMN-PT film grown on the LNO / Si substrate is almost consistent with the bulk peak, which indicates that the stress has been basically released. Compared with the bulk peak, 550 o C and 600...

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Abstract

The invention belongs to the field of ferroelectric film materials and relates to a method for preparing a plumbum magnesium niobate-plumbum titanate (PMN-PT) ferroelectric film. The method comprises the following steps of: firstly, preparing a PMN-PT ceramic target; secondly, cleaning a silicon (Si) substrate; thirdly, preparing a LaNiO3 conductive buffer layer; and finally, preparing the PMN-PTferroelectric film. The method for preparing the PMN-PT ferroelectric film has the advantages of simple process, high repeatability, capacity of preparing the large-area PMN-PT film with pure perovskite structure preferred orientation on a cheap silicon substrate with an actual application value, compatibility with a Si integrated process, low preparation cost and contribution to mass production of devices. The prepared film has the advantages of high ferroelectric properties and suitability for ferroelectric-semiconductor integrated devices.

Description

technical field [0001] The invention belongs to the field of ferroelectric thin film materials, in particular to a preparation method of lead magnesium niobate-lead titanate ferroelectric thin film. Background technique [0002] Perovskite oxide Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -PbTiO 3 (PMN-PT) single crystal has excellent dielectric, piezoelectric, electro-optic and pyroelectric properties, and is widely used in ferroelectric memories, piezoelectric transducers, sensors, drivers, optical switches, infrared detection and imaging devices. However, bulk materials have disadvantages such as complex thinning process, low yield, high manufacturing cost, and low integration, which limit the application range of devices. The thin film not only inherits the advantages of easy preparation and doping modification of bulk materials, but also has the advantages of thin sensitive element, high sensitivity, fast response speed, and easy integration with microelectronics technology. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/06C23C14/02
Inventor 唐艳学田玥孙大志石旺舟
Owner SHANGHAI NORMAL UNIVERSITY
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