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Method for preparing ZnS/SnS double-layer membrane by vacuum evaporation

A vacuum evaporation, double-layer thin film technology, applied in vacuum evaporation plating, coating, metal material coating process, etc., to achieve the effect of improving efficiency, fast growth, and strong practicability

Pending Publication Date: 2011-02-23
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these attempts have not made breakthroughs in improving the efficiency of SnS thin film solar cells, these studies have provided a lot of reference for later research.

Method used

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  • Method for preparing ZnS/SnS double-layer membrane by vacuum evaporation
  • Method for preparing ZnS/SnS double-layer membrane by vacuum evaporation
  • Method for preparing ZnS/SnS double-layer membrane by vacuum evaporation

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Experimental program
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Embodiment

[0021] Embodiment: The preparation process and steps of this embodiment are as follows:

[0022] (1) Before preparing the samples, the ITO glass used as the substrate was cleaned in ultrasonic for 15 minutes with deionized water, acetone, and absolute ethanol respectively, dried and loaded into the sample holder of the vacuum coating machine.

[0023] (2) The present invention uses the DM-450A vacuum evaporation system of Beijing Beiyi Innovation Vacuum Equipment Company, adopts the SnS powder that purity is 96% and the ZnS powder that purity is 99%, and weight is respectively 50mg and 70mg, puts into two respectively An evaporated molybdenum boat. Adjust the distance between the sample holder and the evaporation source (molybdenum boat), about 20cm. The control parameters during the evaporation process are shown in Table 1.

[0024]

[0025] Table 1 Process parameters controlled during the evaporation process

[0026]

Substrate temperature / ℃

Pres...

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Abstract

The invention relates to a method for preparing a ZnS / SnS double-layer membrane of a solar cell by a vacuum evaporation method, which belongs to the technical field of preparation technology for inorganic membrane elements of solar cells. SnS of a P semiconductor is taken as an absorbing layer, a vacuum evaporation system is used and the double-layer membrane is obtained by continuously evaporating a ZnS membrane and a SnS membrane on different boats. A sample holder is adjusted; the temperature of an indium tin oxide (ITO) glass substrate is controlled to be between 150 and 160 DEG C; the vacuum pressure is between 2*10<-3> and 3*10<-3>Pa; the distance between the substrate and an evaporation source molybdenum boat is about 20 centimeters; the evaporation temperatures of the SnS and the ZnS are controlled to be between 1,000 and 1,200 DEG C; after an evaporation process is finished, annealing is performed in a vacuum tubular annealing furnace; and the annealing temperatures are 300 DEG C, 400 DEG C and 500 DEG C. The method of the invention has simple process and high membrane preparation efficiency; and the prepared membrane has high electrical performance and optical performance and is applied to the solar cells.

Description

technical field [0001] The invention relates to a method for preparing a ZnS / SnS double-layer thin film by a vacuum evaporation method, and belongs to the technical field of preparation technology of solar cell inorganic thin film elements. Background technique [0002] Improving conversion efficiency and reducing costs are the main issues facing the photovoltaic industry. Compared with single-crystal polycrystalline silicon solar cells, thin-film solar cells have the advantages of lower manufacturing costs, simpler and more diverse preparation processes. II-VI compound semiconductor SnS, the lattice structure is a=4.329??, b=11.193??, c=3.980??, Sn and S atoms are linked together by van der Waals force. Due to its natural non-toxicity and excellent bandgap width in the visible light range (indirect bandgap 1.0-1.1, direct bandgap 1.3-1.5), it has attracted people's attention. [0003] SnS thin film is more suitable for absorbing layer in solar cells, and it is naturally P-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/26C23C14/58
Inventor 史伟民武文军聂磊陈洁利张小丽刘晟马磊淤凡枫胡喆黄璐孙杰陈振一周杰
Owner SHANGHAI UNIV