GaN-based semiconductor laser and manufacturing method thereof

Abstract

The invention relates to a GaN-based semiconductor laser and a manufacturing method thereof, belonging to the field of semiconductor lasers. The device has the structure that a quantum cascade radiation layer is introduced between an n-type optical confinement layer and an n-type waveguide layer of the laser. By applying infrared radiation generated by the quantum cascade radiation layer when the laser works, the ionization of magnesium acceptor impurities in a p-type GaN waveguide layer, a p-type AlGaN optical confinement layer and a p-type GaN covering layer is realized, the carrier concentration of each p-type layer is increased, and the working voltage of the laser is reduced. The average Al component of the quantum cascade radiation layer is close to that of an n-type AlGaN optical confinement layer, thus the optical confinement factor of the laser has no obvious change. Although the voltage drop of the n-type layers can be increased when the laser works, the laser can still work at a lower voltage because the voltage drop of the p-type layers is greatly reduced. By applying the structure of the laser, the series resistance of the laser can be reduced to further reduce the working voltage of the laser and prolong the service life of the laser.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a gallium nitride-based semiconductor laser and a manufacturing method thereof. Background technique [0002] As a third-generation semiconductor, gallium nitride (GaN) and its series of materials (including aluminum nitride, aluminum gallium nitride, indium gallium nitride, and indium nitride) are characterized by their large band gap and wide spectral range (covering from ultraviolet to Infrared full band), high temperature resistance and corrosion resistance, it has great application value in the field of optoelectronic devices and microelectronic devices. GaN-based lasers are very important GaN-based optoelectronic devices. Because the light waves emitted by them are in the blue-violet light band, GaN-based lasers are used in high-density optical information storage, projection display, laser printing, underwater communication, activation of biochemical reagents and It h...

AI Technical Summary

Problems solved by technology

Due to the large ionization energy of acceptor impurities in P-type GaN and P-type AlGaN, for example, the ionization energy of magnesium impurities in GaN is between 0.16eV and 0.20eV, such a large ionization energy makes the ionization rate of magnesium impurities less than 1%, while Increasing the doping concentration of magnesium will cause the decrease of crystal quality and the increase of defect density, so that the ionized magnesium will be compensated by the increased donor, but the hole concentration will decrease.

The hole concentration of the P-type GaN waveguide layer, P-type AlGaN optical confinement layer and P-type GaN cladding layer in GaN-based lasers is relatively low, which makes the resistivity of the p-type part of the laser relatively high, resulting in high operating voltage of the laser. Does not work stably with DC bias

Although the use of AlGaN / GaN superlattice can reduce the operating voltage, it still cannot fundamentally solve the problem of high operating voltage

Images