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Novel transparent conducting oxide thin film with multi-layer film structure and manufacturing method thereof

An oxide thin film, transparent and conductive technology, which is applied in chemical instruments and methods, coatings, circuits, etc., can solve the problems of slow film growth and no suede structure on the film surface, so as to reduce material costs and achieve good photoelectric performance , the effect of low price

Inactive Publication Date: 2011-08-17
TIANJIN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, ZnO thin films are usually prepared by sputtering. The growth rate of the thin films under this process is very slow, and the film surface does not have an ideal textured structure.

Method used

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  • Novel transparent conducting oxide thin film with multi-layer film structure and manufacturing method thereof
  • Novel transparent conducting oxide thin film with multi-layer film structure and manufacturing method thereof
  • Novel transparent conducting oxide thin film with multi-layer film structure and manufacturing method thereof

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Effect test

Embodiment 1

[0033] The structure of the transparent conductive oxide film with multilayer film structure is: the substrate is ultra-clear glass, the thickness is 3.2mm; the transition layer is SiO 2 , with a thickness of 70nm; the thickness of the ITO film is 500nm; the thickness of the Al-doped ZnO film is 500nm. All layers were deposited at 300°C using Ar and O 2 mixed gas, where O2 The content is 1%. The prepared samples were cleaned with deionized water at room temperature. After drying, the samples were put into 0.5wt% dilute hydrochloric acid for corrosion reaction. The reaction time was 10S, and the solution temperature was constant at 25 degrees Celsius. Finally, they were rinsed with deionized water at room temperature and dried.

Embodiment 2

[0035] The structure of the transparent conductive oxide film with multi-layer film structure is: the substrate is ultra-clear glass, the thickness is 3.2mm; the transition layer is SiN x , x is 0.1, and the thickness is 100nm; the thickness of the ITO film is 10nm; the thickness of the Al-doped ZnO film is 800nm. deposited SiN x The temperature is 500°C, the temperature for depositing the ITO layer is 300°C, and the temperature for depositing the Al-doped ZnO thin film is 200°C to 350°C. Figure 6 The resistivity as a function of AZO layer deposition temperature is shown.

Embodiment 3

[0037] The structure of the transparent conductive oxide film with multi-layer film structure is: the substrate is ultra-clear glass, the thickness is 3.2mm; the transition layer is SiN x , x is 1.5, and the thickness is 10nm; the thickness of the ITO film is 10nm; the thickness of the Ga-doped ZnO film is 1000nm. deposited SiN x The temperature is room temperature, and the deposition temperature of the ITO layer is room temperature. The ZnO-based TCO film layer is deposited with a Ga-doped ZnO film, and the target used is a 0.57wt% Ga-doped ZnO target. Wash the sample with deionized water, put the sample into 0.1mol / L oxalic acid for corrosion reaction after drying, the reaction time is 1 second to 400 seconds, the temperature of the acid solution is 25 degrees Celsius, because the oxalate generated by the reaction is relatively insoluble Therefore, during the cleaning process with deionized water, the temperature is controlled at 60 degrees Celsius, and finally dried. Fig...

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Abstract

The invention discloses a novel transparent conducting oxide thin film with a multi-layer film structure, wherein the thin film provided by the invention is composed of a base plate, a transition layer, an ITO (indium tin oxide) layer and a ZnO-based thin film layer; the base plate is made of super white glass; the transition layer is made from SiO2 or SiNx; the ITO layer is a Sn-doped In2O3 thin film; and the doped elements of the ZnO-based thin film layer is one or more of the elements consisting of Al, Ga or Zr. As doped ZnO-based thin film layer is deposited on the ITO thin film, the transparent conducting oxide thin film of the multi-layer film structure has better photoelectric properties, lower material cost, is more stable under the hydrogen plasma environment, and is very suitable for the field of thin film solar cells; and the invention simultaneously discloses a novel manufacturing method for manufacturing the novel transparent conducting oxide thin film with the multi-layer film structure, a wet-method process in the manufacturing method is utilized, and a suede structure is formed on the surface of the thin film finally.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic power generation, and relates to the development and research of important components of thin-film solar cells, and more specifically to a new type of transparent conductive oxide film (TCO) with a multilayer film structure and a preparation method thereof. Background technique [0002] Although crystalline silicon cells are still the mainstream products in the photovoltaic market, with the development of photovoltaic power generation technology, thin-film solar cells are gradually industrialized. As an indispensable part of thin-film solar cells, transparent conductive oxide films (TCO) Low-cost solar cell research and production occupy a very important position. Because the front electrode of thin-film solar cells uses transparent conductive oxide (TCO) glass, its performance plays a vital role in the conversion efficiency of the cell. Solar cells require that the front electrode has extre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18B32B17/06C23C14/06C23C14/34
CPCY02P70/50
Inventor 竺云李德军
Owner TIANJIN NORMAL UNIVERSITY
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