Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for synthesizing silicon nitride nanorod crystalline material at low temperature by solvothermal method

A nanorod-shaped, solvothermal method, applied in chemical instruments and methods, nitrogen compounds, nanotechnology, etc., can solve the problems of low purity, difficult to repeat the reaction process, poor crystallization of materials, etc., achieve simple experimental equipment, overcome reaction High temperature, good quality effect

Inactive Publication Date: 2011-08-24
NORTHWEST UNIV
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are problems such as poor crystallization of materials, low purity, and difficulty in repeating the reaction process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for synthesizing silicon nitride nanorod crystalline material at low temperature by solvothermal method
  • Method for synthesizing silicon nitride nanorod crystalline material at low temperature by solvothermal method
  • Method for synthesizing silicon nitride nanorod crystalline material at low temperature by solvothermal method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Add 0.3g of silicon powder, 3g of sodium azide and 8g of iodine to a 30ml high-pressure stainless steel reaction kettle, stir evenly with a glass rod; seal the reaction kettle and place it in an oven, heat it to 250°C, keep it at this temperature and continue After heating for 15 hours, cool to room temperature naturally, and collect the product after the reaction. The product is a solid powder; the collected product is washed with absolute ethanol, deionized water, and HNO. 3 And HF (v / v=3:1) mixed solution, washed with distilled water; finally dehydrated product with absolute ethanol. The prepared samples were tested by XRD, FITR, SEM and TEM, and the results showed that the product was a nanorod-shaped silicon nitride crystal.

[0037] figure 2 This is the XRD pattern of the synthesized silicon nitride nanorod crystals in Example 1. by figure 2 It can be seen that the obtained product is silicon nitride with a mixed phase of α and β, and no diffraction peaks of other ...

Embodiment 2

[0039] The process flow of this embodiment is the same as that of Embodiment 1, except that the heating temperature in this embodiment after the reactor is sealed and placed in the oven is 200°C. The sample prepared in this embodiment can achieve the same technical effect as the embodiment 1. Image 6 SEM morphology of the synthesized silicon nitride nanorod crystals in Example 2. by Image 6 It can be clearly seen that the product is a rod-shaped crystal with a diameter of about 200 nanometers. The surface of the crystal rod is smooth and regular, and the thickness is relatively uniform.

Embodiment 3

[0041] The process flow of this embodiment is the same as that of Embodiment 1, except that the heating temperature in this embodiment after the reactor is sealed and placed in the oven is 220°C. The sample prepared in this embodiment can achieve the same technical effect as the embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for synthesizing a silicon nitride nanorod crystalline semiconductor material at low temperature by a solvothermal method, which comprises the following steps of: adding silica fume, sodium azide and iodine into a high-pressure reaction kettle according to the mass ratio of 0.3:3:8, and evenly stirring with a glass rod; sealing the reaction kettle and then putting the reaction kettle in an oven, and heating to 200-250 DEG C, keeping heating for 15 hours at 200-250 DEG C, and then naturally cooling to the room temperature, and collecting a product after the reaction; washing the collected product with anhydrous ethanol, deionized water, a HNO3 and HF mixture and distilled water in sequence; and finally, dehydrating the product with anhydrous ethanol to obtain the silicon nitride nanorod crystalline semiconductor material. The silicon nitride nanorod crystal with the diameter of 100nm, high purity and good quality can be prepared by the method, and the method uses simple experimental devices and is convenient to operate; and the method provided by the invention has low requirements on the control of growth parameters and the like, and is convenient for the industrial mass production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation, in particular to the technical field of wide bandgap semiconductor material synthesis, and specifically relates to a method for synthesizing silicon nitride nanorod crystal material at low temperature by solvothermal method. Background technique [0002] Silicon nitride (Si 3 N 4 ) is an important wide bandgap semiconductor material with a bandgap width of 5.0eV at room temperature. Its unique structure and properties have attracted more and more attention. Si 3 N 4 Compared with traditional silica materials, it has significant advantages. Si 3 N 4 The material has good passivation performance, water vapor permeability resistance and photoelectric performance, and can effectively prevent the diffusion of Na, B and other impurities, so it is widely used in microelectronics and optoelectronic devices, mainly used as passivation layer, insulating layer and sensitive...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B21/068B82Y40/00
Inventor 赵武张志勇冯鹏飞岳刚闫军锋翟春雪
Owner NORTHWEST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com