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Photoethcing self assembly preparation method of patterned BiFeO3 film

A patterning and self-assembly technology, applied in spin-exchange coupled multilayer films, substrate/intermediate layers, nanotechnology, etc., to achieve the effects of simple preparation process, clear edge outline, and broad application prospects

Inactive Publication Date: 2011-08-24
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the preparation of BiFeO by liquid phase deposition method combined with photolithographic self-assembly technology 3 The research report of patterned thin film has not been seen yet, so it is of great research value

Method used

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  • Photoethcing self assembly preparation method of patterned BiFeO3 film
  • Photoethcing self assembly preparation method of patterned BiFeO3 film
  • Photoethcing self assembly preparation method of patterned BiFeO3 film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) Choose a common glass slide as the base, cut the glass substrate into a rectangle of 20mm×10mm, and use commercially available detergent, acetone, and ethanol to ultrasonically clean it for 10 minutes to remove grease and other impurities on the surface of the glass substrate. After each ultrasonic cleaning, the substrates were rinsed with copious amounts of distilled water and finally dried with nitrogen gas. Place the clean substrate in a UV irradiator for 15 minutes to make the surface of the substrate reach "atomic cleanliness".

[0031] (2) Place the substrate irradiated by ultraviolet light in a newly prepared 1vol% octadecyltrichlorosilane (OTS)-toluene solution, and soak it for 30 minutes at room temperature to form a layer of OTS on the surface of the substrate. Monolayer. After soaking, wash with acetone for 2 min, blow dry with nitrogen, and then bake at 120 °C for 5 min to remove residual organic matter and promote chemical adsorption of OTS-SAMs. Then...

Embodiment 2

[0037] (1) Choose a common glass slide as the base, cut the glass substrate into a rectangle of 20mm×10mm, and use commercially available detergent, acetone, and ethanol to ultrasonically clean it for 10 minutes to remove grease and other impurities on the surface of the glass substrate. After each ultrasonic cleaning, the substrates were rinsed with copious amounts of distilled water and finally dried with nitrogen gas. Place the clean substrate in a UV irradiator for 10 minutes to make the surface of the substrate reach "atomic cleanliness".

[0038] (2) Place the substrate irradiated by ultraviolet light in a newly prepared 1vol% octadecyltrichlorosilane (OTS)-toluene solution, and soak it for 20 minutes at room temperature to form a layer of OTS on the surface of the substrate. Monolayer. After soaking, wash with acetone for 3 min, blow dry with nitrogen, and then bake at 110 °C for 4 min to remove residual organic matter and promote chemical adsorption of OTS-SAMs. Then...

Embodiment 3

[0042] (1) Choose a common glass slide as the base, cut the glass substrate into a rectangle of 20mm×10mm, and use commercially available detergent, acetone, and ethanol to ultrasonically clean it for 10 minutes to remove grease and other impurities on the surface of the glass substrate. After each ultrasonic cleaning, the substrates were rinsed with copious amounts of distilled water and finally dried with nitrogen gas. Place the clean substrate in a UV irradiator for 20 minutes to make the surface of the substrate reach "atomic cleanliness".

[0043] (2) Place the substrate irradiated by ultraviolet light in a newly prepared 1vol% octadecyltrichlorosilane (OTS)-toluene solution, and soak it for 40 minutes at room temperature to form a layer of OTS on the surface of the substrate. Monolayer. After soaking, wash with acetone for 3 min, blow dry with nitrogen, and then bake at 130 °C for 3 min to remove residual organic matter and promote chemical adsorption of OTS-SAMs. Then...

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Abstract

The invention discloses a photoethcing self assembly preparation method of a patterned BiFeO3 film. The method comprises the following steps: (1) selecting a common slide glass as a substrate, cutting the glass substrate, performing ultrasonic cleaning, drying, and irradiation in an ultraviolet light irradiation instrument, respectively; (2) immersing the glass substrate irradiated by ultravioletlight in OTS-toluene solution to form an OTS monomolecular film on the surface of the substrate, after the immersing, cleaning the substrate with acetone, blow-drying, stoving, irradiating the substrate, with a photomask covering thereon, under ultraviolet light to obtain a patterned functional self-assembled film; (3) preparing BiFeO3 precursor solution, placing an OTS-SAMs matrix of the patterned functional self-assembled film in the prepared precursor solution, performing deposition, supersonic wave concussion cleaning and annealing to obtain the photoetching self-assembled patterned BiFeO3 film. The method provided by the invention combines liquid phase deposition method and photoetching self-assembled monolayers technology to obtain the patterned BiFeO3 film. The film has the following advantages: the edge contour is clear, and the film is firmly bonded to the substrate.

Description

technical field [0001] The invention relates to a magnetic sensor and BiFeO used in a capacitance-inductance integrated device 3 thin films, especially a patterned BiFeO 3 Photolithographic self-assembly preparation method of thin film. Background technique [0002] In recent years, a new type of ferromagnetic electric material BiFeO 3 aroused great interest. BiFeO 3 With a trigonal twisted perovskite structure, it is one of the few single-phase ferromagnetic materials with both ferroelectricity and magnetism at room temperature. It can generate a magnetic field from an electric field, and a magnetic field can also induce electrical polarization, a property known as the magnetoelectric effect. This mutual control of magnetism and electricity has extremely important application prospects in information storage, spintronic devices, magnetic sensors, and capacitive-inductive integrated devices. Two kinds of structural order at the same time at room temperature, that is, f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/32B82Y40/00
Inventor 谈国强王艳任宣儒宋亚玉
Owner SHAANXI UNIV OF SCI & TECH
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