Cadmium-free CuInGaSe thin film solar cell assembly and preparing method of zinc sulfide buffer layer thin film thereof

Abstract

The invention discloses a preparing method of a cadmium-free CuInGaSe thin film solar cell assembly. The preparing method comprises the following steps of: step one, forming a back electrode and a CuInGaSe light absorption layer on a substrate in sequence, and forming a sample sheet; step two, sputtering a zinc oxide thin film on the surface of the sheet; step three, putting the sample sheet in aselenization chamber to anneal in hydrogen sulfide atmosphere, and converting the zinc oxide thin film into a zinc sulfide buffer layer thin film; and step four, forming a baffle layer and a window later on the zinc sulfide buffer layer thin film in sequence, thus obtaining the cadmium-free CuInGaSe thin film solar cell assembly. The preparing method is relatively high in temperature during the annealing progress, so that crystallization quality of the thin film can be increased. The invention further provides a preparing method of the zinc sulfide buffer layer thin film.

Description

【Technical field】 [0001] The invention relates to a cadmium-free copper indium gallium selenium thin-film solar battery component and a preparation method of the zinc sulfide buffer layer. 【Background technique】 [0002] Copper Indium Gallium Selenide (Cu(In,Ga)Se 2 , referred to as CIGS) thin-film solar cell module is a new type of solar cell module developed in the late 1980s, and its excellent performance has attracted widespread attention. The typical structure of copper indium gallium selenide thin film solar cell module is a multilayer film structure, including: metal gate (Al) / transparent electrode (AZO) / window layer (ZnO) / buffer layer (CdS) / light absorption layer (CIGS) / Back Electrode (Mo) / Glass. [0003] Although the thickness of the buffer layer is only 50nm, it is crucial for CIGS cells. The buffer layer can form a heterojunction with the CIGS absorber layer so as to separate the photogenerated carriers and protect the absorber layer from being damaged...

AI Technical Summary

Problems solved by technology

[0007] In the preparation of CIGS solar cell components, the method of obtaining ZnS thin films is very important. At present, the preparation of ZnS buffer layers as solar cell components mostly adopts the CBD method. This method has the following problems: 1) There is a homogeneous precipitation phenomenon during film deposition , the obtained thin film is not ZnS pure phase, which also mixed with Zn(OH) 2

This ZnS thin film with impurities has poor adhesion and is prone to cracking; 2) in the preparation process of ZnS thin film, if the distribution of solution temperature concentration is uneven and the instability of stirring rate will also cause poor reproducibility, in a large area Film uniformity is more difficult to control during preparation