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Method for cleaning electronic-grade polycrystalline silicon production device and process pipe

A technology for production equipment and process pipelines, applied in the direction of liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve problems such as easy residual Na ions, P ions, wall thickness reduction, over-corrosion, etc. Achieve the effect of convenient realization, easy operation and high cleanliness

Active Publication Date: 2012-10-03
SCEGC EQUIP INSTALLATION GRP COMPANY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned conventional cleaning method is characterized by fast reaction speed and simple conditions, but the disadvantage is that it is easy to cause over-corrosion, which makes the effective wall thickness of the base metal thinner, and at the same time, Na ions and P ions are easy to remain on the surface of the passivation film.

Method used

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  • Method for cleaning electronic-grade polycrystalline silicon production device and process pipe

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] In this example, if figure 1 As shown, the polysilicon production equipment with an annual output of 1250 tons is cleaned, and the cleaning process is as follows:

[0069] Step 1, degreasing cleaning, the degreasing cleaning process is as follows:

[0070] 101. Coarse degreasing cleaning: Under normal temperature, use trichlorethylene cleaning agent to clean the metal objects to be cleaned, and the cleaning time is 2 hours.

[0071] 102. Hot air drying: After rough degreasing and cleaning, use hot air drying equipment to dry the cleaned polysilicon production equipment with hot air at a temperature of 40°C.

[0072] And after drying the cleaned polysilicon production equipment, it is necessary to use oil-absorbing filter paper to detect whether there is oil stain on the inner surface of the cleaned polysilicon production equipment: when it is detected that there is no oil stain on the inner surface, go to step 103; otherwise, go to step 103; Enter step 101, repeat rou...

Embodiment 2

[0089]In this embodiment, the polysilicon production equipment with an annual output of 3,000 tons is cleaned. The cleaning process is different from that in Example 1: when performing rough degreasing cleaning in step 101, the cleaning time is 3 hours; in step 102, hot air drying is used. Dry equipment with hot air at a temperature of 50°C to dry the polysilicon production equipment to be cleaned; in step 103, use fatty alcohol polyoxyethylene ether solution and wash at a temperature of 50°C for 3 hours; in step 3, use B Sodium diamine tetraacetate solution and rust removal and cleaning at 50°C, the rust removal and cleaning time is 8 hours; and during the actual rust removal and cleaning process, the ethylenediamine tetramine for rust removal and cleaning is detected every 30 minutes The concentration of iron ions in the sodium acetate solution, and record the results of each test simultaneously; in step 4, use citric acid solution and rinse the cleaned polysilicon production...

Embodiment 3

[0092] In this embodiment, the polysilicon production equipment with an annual output of 500 tons is cleaned. The cleaning process is different from that in Example 1: when performing rough degreasing cleaning in step 101, the cleaning time is 2.5 hours; in step 102, hot air drying is used. The drying equipment uses hot air at 45°C to dry the cleaned polysilicon production equipment; in step 103, aliphatic alcohol polyoxyethylene ether solution is used for cleaning at a temperature of 45°C, and the cleaning time is 4 hours; in step 3, B Sodium diamine tetraacetate solution and rust removal and cleaning are carried out at 45°C, and the rust removal and cleaning time is 9 hours; and during the actual rust removal and cleaning process, the ethylenediaminetetrafluoroethylene for rust removal and cleaning is detected every 40 minutes. The concentration of iron ions in the sodium acetate solution, and record the results of each test simultaneously; in step 4, use citric acid solution...

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Abstract

The invention discloses a method for cleaning an electronic-grade polycrystalline silicon production device and process pipe, comprising the steps of: 1, decreasing and cleaning; 2, water washing; 3, complexation rust cleaning: carrying out rust cleaning by utilizing a complexation cleaning agent; 4, rinsing; 5, ammonia water washing: washing at a temperature of 55-60 DEG C by utilizing an ammonia solution; 6, passivation: carrying out the passivation at a temperature of 80-90DEG C by utilizing a hydrogen peroxide solution; 7, ultrapure water washing: washing by utilizing ultrapure water withresistivity not more than 12megohm.cm; 8, drying treatment: drying by utilizing compressed-air drying equipment; and 9, encapsulating. The cleaning method disclosed by the invention has the advantages of reasonable design, simple steps, simpleness and convenience for operation and realization, good cleaning effect and no over etching and hydrogen embrittlement forming and can solve the problems of the over etching, easiness in having residual Na and P ions on the surface of a passivation film and the like in a conventional cleaning method.

Description

technical field [0001] The invention belongs to the technical field of industrial equipment and pipeline cleaning, and in particular relates to a cleaning method for electronic-grade polysilicon production equipment and process pipelines. Background technique [0002] With the development and progress of society, human beings pay more and more attention to energy. As the cornerstone material of new energy, the demand for polysilicon, especially the demand for electronic grade polysilicon, is also increasing. Polysilicon is the main raw material for manufacturing polished silicon wafers, solar cells and high-purity silicon products, and is the most basic raw material for the information industry and new energy industry. As the most pure electronic grade polysilicon in polysilicon products (purity is 11 nines, that is, its purity is 99.999999999%), the production process is only mastered by a few developed countries in the world. The production process of electronic grade pol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/00B08B9/032
Inventor 吴常明张斌王卫东闫晓辉马彦谭克林
Owner SCEGC EQUIP INSTALLATION GRP COMPANY
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