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ZnO-based diluted magnetic semiconductor film with intrinsic ferromagnetism and preparation method thereof

A dilute magnetic semiconductor and ferromagnetic technology, which is applied in the manufacture of semiconductor/solid-state devices, the manufacture/processing of electromagnetic devices, and vacuum evaporation coating, etc. Large-area and large-scale production, improved uniformity and densification, and the effect of promoting disintegration or dissociation

Active Publication Date: 2014-11-05
江苏先进无机材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the ferromagnetism of the transition metal itself or the compound formed with ZnO introduced by doping, it has brought great difficulties to clarify the magnetic origin and practical application of dilute magnetic semiconductors.

Method used

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  • ZnO-based diluted magnetic semiconductor film with intrinsic ferromagnetism and preparation method thereof
  • ZnO-based diluted magnetic semiconductor film with intrinsic ferromagnetism and preparation method thereof
  • ZnO-based diluted magnetic semiconductor film with intrinsic ferromagnetism and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] ZnO films were doped with 3 mol% Er and 2% mol Al (Zn 0.95 Er 0.03 al 0.02 O) as an example:

[0029] (1) Zn was prepared by a standard isostatic solid-state reaction synthesis process 0.95 Er 0.03 al 0.02 O target. Press Zn with electronic balance 0.95 Er 0.03 al 0.02 The stoichiometric ratio of the corresponding elements of O Weigh high-purity (≥99.99%) ZnO (38.6603g), Er 2 o 3 (2.8699g)Al 2 o 3 (0.5098g), after being fully mixed, pre-pressed (50MPa), then cold isostatic pressed (200MPa), and finally placed in a tubular electric furnace and gradually heated to 1000 ° C, and kept for 48 hours.

[0030] (2) The quartz glass substrate is cleaned with N 2 Blow dry and place in the reaction chamber of an inductively coupled plasma-enhanced physical vapor deposition device.

[0031] (3) Pump the background vacuum of the inductively coupled plasma enhanced physical vapor deposition device system to ≤5×10 -5 Pa, heat the substrate to 300°C, then pump the vacuum...

Embodiment 2

[0041] ZnO films were doped with 2% mol Er and 1% mol Al (Zn 0.97 Er 0.02 al 0.01 O) as an example:

[0042] (1) Zn was prepared by a standard isostatic solid-state reaction synthesis process 0.97 Er 0.02 al 0.01 O target. Press Zn with electronic balance 0.97 Er 0.02 al 0.01 The stoichiometric ratio of the corresponding elements of O weighs high-purity (≥99.99%) ZnO (39.4742g), Er 2 o 3 (1.9126g), Al 2 o 3 (0.2549g), after being fully mixed, pre-pressed (50MPa), then cold isostatic pressed (200MPa), and finally placed in a tubular electric furnace and gradually heated to 1100 ° C, and kept for 48 hours.

[0043] (2) Clean the Si substrate with N 2 Blow dry and place in the reaction chamber of an inductively coupled plasma-enhanced physical vapor deposition device. The inductively coupled plasma enhanced physical vapor deposition device system, i.e. ICP-PVD system, such as figure 1 shown.

[0044] (3) Pump the background vacuum of the inductively coupled plasma...

Embodiment 3

[0050] ZnO films were doped with 1% mol Er and 1% mol Al (Zn 0.98 Er 0.01 al 0.01 O) as an example:

[0051] (1) Zn was prepared by a standard isostatic solid-state reaction synthesis process 0.98 Er 0.01 al 0.01 O target. Press Zn with electronic balance 0.98 Er 0.01 al 0.01 The stoichiometric ratio of the corresponding elements of O weighs high-purity (≥99.99%) ZnO (39.8811g), Er 2 o 3 (0.9563g), Al 2 o 3 (0.2549g), after being fully mixed, pre-pressed (50MPa), then cold isostatic pressed (200MPa), and finally placed in a tubular electric furnace and gradually heated to 1200 ° C, and kept for 48 hours.

[0052] (2) Clean the SiC substrate, dry it with N2 and put it into the reaction chamber of the inductively coupled plasma enhanced physical vapor deposition device. The inductively coupled plasma enhanced physical vapor deposition device system, i.e. ICP-PVD system, such as figure 1 shown.

[0053] (3) Inductively coupled plasma enhanced physical vapor deposit...

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Abstract

The invention belongs to the technical field of semiconductor thin film materials and relates to a high-quality, low-resistivity, rare-earth metal ion-doped ZnO dilute magnetic semiconductor thin film with intrinsic ferromagnetism and a preparation method thereof. The chemical composition of the film of the present invention conforms to the general chemical formula Zn1-x-yErxAlyO, 0<x≤0.03, 0<y≤0.02. The present invention uses rare earth metal ions Er and Al donor doping, based on ceramic targets, and adopts ICP-PVD technology to prepare ZnO-based dilute magnetic semiconductor films with intrinsic ferromagnetism. The ICP-PVD technology of the present invention can uniformly dope Er into the ZnO lattice. At the same time, the doping of Al can significantly increase the carrier concentration in the ZnO film and effectively regulate the ferromagnetic exchange between Er2+ ions. The resulting film has room temperature The above intrinsic ferromagnetism and anomalous Hall effect can be widely used in spintronic devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin film materials, and relates to a rare earth metal ion-doped ZnO dilute magnetic semiconductor thin film with high quality, low resistivity and intrinsic ferromagnetism and a preparation method thereof. Background technique [0002] With the development of science and technology, human beings have entered into a highly electronic and information society. The processing, storage and transmission of information will require unprecedented scale and speed. In the semiconductor industry, semiconductor devices dominated by Si materials have been developed for more than half a century. With the continuous shrinking of the feature size of semiconductor devices, the processing technology of a single transistor has gradually reached the dual limits of physics and technology. How to realize the above-mentioned leap in electronic information technology has become one of the major scientific problem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10H01L43/12H01L21/203C23C14/08C23C14/34H10N50/01
Inventor 刘学超陈之战杨建华施尔畏
Owner 江苏先进无机材料研究院