Photoelectric detector based on colloidal quantum dots and graphene utilized as photoelectrode and manufacturing method thereof

A technology of colloidal quantum dots and photodetectors, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve the problems of difficult adjustment of response spectrum peak position and low electron mobility, and achieve effective separation , enhance the interaction, improve the effect of sensitivity

Inactive Publication Date: 2012-01-04
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF3 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Organic polymers have been widely used in photodetectors due to their low cost, simple process, high hole mobility, easy modific

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric detector based on colloidal quantum dots and graphene utilized as photoelectrode and manufacturing method thereof
  • Photoelectric detector based on colloidal quantum dots and graphene utilized as photoelectrode and manufacturing method thereof
  • Photoelectric detector based on colloidal quantum dots and graphene utilized as photoelectrode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A photodetector based on colloidal quantum dots and graphene as a photoelectrode, including a photoelectrode based on colloidal quantum dots and graphene, an organic polymer active layer and an electrode;

[0032] The above colloidal quantum dots are narrow bandgap semiconductor colloidal quantum dots PbS;

[0033] The above-mentioned organic polymer active layer is a mixture of P3HT and PCBM, wherein the mass ratio of P3HT and PCBM is 1:1; P3HT and PCBM have good energy level matching, which is conducive to the collection of charges;

[0034] The above-mentioned electrodes are aluminum electrodes, and aluminum is stable in air, and its work function is 4.28eV.

[0035] A method for preparing a photodetector based on colloidal quantum dots and graphene as a photoelectrode, the specific steps are:

[0036] 1) First, wipe the ITO glass repeatedly with absorbent cotton and detergent, rinse it with deionized water, then use deionized water, acetone and isopropanol to ultra...

Embodiment 2

[0041] A photodetector based on colloidal quantum dots and graphene as a photoelectrode, including a photoelectrode based on colloidal quantum dots and graphene, PEDOT:PSS hole transport layer, organic polymer active layer, PCBM electron transport layer and electrodes;

[0042] The above colloidal quantum dots are narrow bandgap semiconductor colloidal quantum dots PbS;

[0043] The above-mentioned organic polymer active layer is a mixture of P3HT and PCBM, wherein the mass ratio of P3HT and PCBM is 1:1; P3HT and PCBM have good energy level matching, which is conducive to the collection of charges;

[0044] The above electrode is an aluminum electrode; its work function is 4.28 eV.

[0045] A method for preparing a photodetector based on colloidal quantum dots and graphene as a photoelectrode, the specific steps are:

[0046] 1) First, wipe the ITO glass repeatedly with absorbent cotton and detergent, rinse it with deionized water, then use deionized water, acetone and isopro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Work functionaaaaaaaaaa
Thicknessaaaaaaaaaa
Resistanceaaaaaaaaaa
Login to view more

Abstract

The invention relates to a photoelectric detector based on colloidal quantum dots and grapheme utilized as a photoelectrode and a manufacturing method thereof and belongs to the fields of photoelectric conversion, new energy materials and technologies. The method comprises the following steps: preparing a graphene film on a clean ITO (indium tin oxide) glass surface by an electrophoresis method, and then preparing a layer of colloidal quantum-dot film on the graphene film; spinning an organic polymer active layer on the photoelectrode; and finally evaporating the photoelectrode to obtain a photoelectric detector. The method for manufacturing the structure of the photoelectric detector provided by the invention is simple and low-priced; spectral bands induced by the detector can be adjusted according to the compositions of the polymers and the spectral band range of the incident sunlight absorbed by the polymers; PbS colloidal quantum dots with different particle sizes can absorb near-infrared light with different wavelengths and different near-infrared spectrums in the incident sunlight can be absorbed by the photoelectric detector with the colloidal quantum dots; and the quantum dots dotted on the graphene film can interact with the graphene, so that photon-generated carriers can be effectively separated and rapidly transmitted, and the photoelectric detection sensitivity is improved.

Description

technical field [0001] The invention relates to a photodetector based on colloidal quantum dots and graphene as a photoelectrode and a preparation method thereof, belonging to the fields of photoelectric conversion, new energy materials and technologies. Background technique [0002] Photodetectors are mainly used for ray measurement and detection, industrial automatic control, photometry, etc. in the visible or near-infrared bands. The detection of mid-infrared (MIR) and far-infrared (FIR) radiation is widely used in remote sensing, thermal Imaging, night vision, space positioning and many other fields have important military and civilian significance. [0003] In our modern life, light-emitting diodes, transistors, and solar cells based on semiconductor heterojunctions are widely used in satellite TV systems and mobile communication systems. However, with the advent of nanotechnology, semiconductor heterojunctions with nanometer dimensions have shown great application pot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/42H01L51/44H01L51/46
CPCY02E10/549Y02P70/50
Inventor 杨盛谊赵娜张丽邹炳锁
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap