High-hardness micrometer grinding fluid and preparation method thereof

A technology of abrasive liquid and high hardness, applied in chemical instruments and methods, other chemical processes, etc., can solve problems such as uneven particle size, difficult dispersion of abrasive particles, and imbalance of pH value of abrasive liquid, etc., to achieve a complete wafer structure , good adaptability and balanced mechanical properties

Active Publication Date: 2012-01-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

The preparation of the grinding liquid is difficult, and there are many complicated factors. For example, the abrasive particles for grinding are difficult to disperse evenly in the sol

Method used

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  • High-hardness micrometer grinding fluid and preparation method thereof
  • High-hardness micrometer grinding fluid and preparation method thereof

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Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0032] In the early stage of grinding, if it is necessary to reduce the thickness of the wafer on a large scale, it is most suitable to use an iron disc with a hard texture and a small elastic coefficient as the grinding disc.

[0033] The lapping liquid provided by the present invention for thinning and grinding high-hardness GaN epitaxial substrates adopts single crystal artificial diamond (CBN, cubic boron nitride) micropowder and alumina micropowder, the particle diameter of which is 25-1 μm, and adopts inorganic Salt mixture sodium silicate / sodium hypochlorite / sodium pyrophosphate as dispersant, organic PEG200 as lubricant, ammonia water and propionic acid as pH regulator, deionized water (DI) as solvent. The specifi...

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Abstract

The invention discloses high-hardness micrometer grinding fluid and a preparation method thereof. The grinding fluid is prepared from the following materials in percentage by mass: 0.1 to 2.0 percent of monocrystal artificial diamond micro powder, 0.2 to 5.0 percent of aluminum oxide micro powder, 0.2 to 5.0 percent of inorganic salt mixture, 0.5 to 10 percent of organic matter polyethylene glycol (PEG) 200, 0.01 to 1 percent of ammonia water, 0.01 to 1 percent of propanoic acid and 78 to 98.5 percent of deionized water. The invention also discloses a method for preparing the grinding fluid. When the high-hardness micrometer grinding fluid and the preparation method thereof, which are provided by the invention, are used, high-hardness micrometer grinding material is adopted for blending the grinding fluid, the using effect is ideal, the mechanical properties are balanced, and the requirements of a GaN epitaxy substrate (silicon carbide, sapphire) thinning grinding process are met.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a high-hardness micron grinding liquid and a preparation method thereof. Background technique [0002] Gallium nitride (GaN), as the third-generation wide-bandgap semiconductor material, has a large bandgap (3.4eV), a high breakdown voltage (3.3MV / cm), and a high two-dimensional electron gas concentration (>10 13 cm 2 ), high velocity of saturated electrons (2.8×10 7 cm / s) and other characteristics have received extensive attention internationally. The application of GaN in devices is regarded as the most important event in semiconductors in the 1990s. At present, the high frequency, high voltage, high temperature and high power characteristics of AlGaN / GaN HEMT devices make them have great prospects in microwave power devices. At the same time, GaN has brought semiconductor E light-emitting diodes and lasers to a new level. [0003] GaN is a direct bandga...

Claims

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Application Information

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IPC IPC(8): C09K3/14
Inventor 汪宁陈晓娟罗卫军庞磊刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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