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Preparation method for transparent graphene conductive film

A transparent conductive film and graphene technology, applied in the field of materials, can solve the problems of film surface pollution and the inability to reuse catalysts, etc., and achieve the effects of high conductivity, no pollution on the surface, and large size.

Active Publication Date: 2012-12-05
HAIAN MINGHUI METAL MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the rolling process is used for transfer, which needs to dissolve and remove the metal catalyst and remove the protective film, which will easily cause the surface pollution of the film and the catalyst cannot be reused.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Step (1). Dip the iron sheet (3cm x 2cm x 0.05cm) with hydrochloric acid with a concentration of 0.5M for 10 seconds, rinse with deionized water, dry it with nitrogen, and put it into the quartz tube of the electric furnace;

[0020] Step (2). The mixed gas of argon and hydrogen is continuously fed into the quartz tube, the flow ratio of argon and hydrogen is 1:2, and the temperature of the electric furnace is raised to 900°C and then kept for 30 minutes;

[0021] Step (3). Feed methane into the quartz tube, the flow ratio of methane and hydrogen is 1:1, close and feed methane gas after 30 minutes;

[0022] Step (4). Turn on the electric furnace, cool the quartz tube to normal temperature, the cooling rate is 20°C / min, then turn off the hydrogen and argon gas, and take out the iron sheet;

[0023] Step (5). The silica glass is cleaned with deionized water, then blown dry with nitrogen, and the surface is uniformly coated with adhesive epoxy resin, and the thickness of t...

Embodiment 2

[0027] Step (1). Dip the copper sheet (3cm x 3cm x 0.04cm) with hydrochloric acid with a concentration of 0.6M for 9 seconds, wash it with deionized water, dry it with nitrogen, and put it into the quartz tube of the electric furnace;

[0028] Step (2). The mixed gas of argon and hydrogen is continuously fed into the quartz tube, the flow ratio of argon and hydrogen is 3:5, and the temperature of the electric furnace is raised to 920° C. and then kept for 25 minutes;

[0029] Step (3). Feed methane into the quartz tube, the flow ratio of methane to hydrogen is 1.2:1, close and feed methane gas after 25 minutes;

[0030] Step (4). Turn on the electric furnace, cool the quartz tube to normal temperature, the cooling rate is 24°C / min, then turn off the hydrogen and argon gas, and take out the copper sheet;

[0031] Step (5). The transparent plastic film is cleaned with deionized water, then dried with nitrogen, and the surface is uniformly coated with adhesive epoxy resin, and th...

Embodiment 3

[0035] Step (1). Dip the nickel sheet (4cm x 3cm x 0.05cm) in hydrochloric acid with a concentration of 0.8M for 8 seconds, wash it with deionized water, dry it with nitrogen, and put it into the quartz tube of the electric furnace;

[0036] Step (2). The mixed gas of argon and hydrogen is continuously fed into the quartz tube, the flow ratio of argon and hydrogen is 4:5, and the temperature of the electric furnace is raised to 950° C. and then kept for 20 minutes;

[0037] Step (3). Feed methane into the quartz tube, the flow ratio of methane to hydrogen is 1.5:1, close and feed methane gas after 24 minutes;

[0038] Step (4). Turn on the electric furnace, cool the quartz tube to normal temperature, the cooling rate is 25°C / min, then turn off hydrogen and argon, and take out the nickel sheet;

[0039] Step (5). The silica glass is cleaned with deionized water, then blown dry with nitrogen, and the surface is evenly coated with an adhesive acrylate resin, and the thickness of ...

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Abstract

The invention relates to a preparation method for a transparent graphene conductive film. At present, a metal catalyst needs to be dissolved and removed in the transparent conductive film preparation process characterized by transferring to a transparent matrix by a large-size graphene conductive film to remove a polymer protection film, thereby bringing big possibility of causing the problem that the film surface is polluted and the catalyst can not be reused. The method disclosed by the invention comprises the following steps of: firstly, taking a transition metal as a catalyst to prepare the graphene by chemical vapor deposition; then, bonding the graphene growing on the surface of the transition metal with the transparent film matrix by a binder; separating the metal and the graphene by external mechanical force; and transferring the separated graphene to the transparent matrix surface to prepare the transparent graphene conductive film. The transparent graphene conductive film prepared with the method has the advantages of big size, no pollution on the surface, excellent optical property and electrics performance and low cost, is flexible and can be used as the alternative material of the transparent indium tin oxide conductive glass.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a preparation method of a graphene transparent conductive film. Background technique [0002] In 2004, researchers at the University of Manchester in the United Kingdom prepared single atomic layer graphene for the first time. The excellent electrical properties of graphene set off a research boom all over the world. Graphene is a single atomic layer two-dimensional material composed of carbon atoms arranged in a hexagonal honeycomb lattice plane space, also known as single atomic layer graphite. Its unique structure determines that it has both high toughness and high rigidity. Chemical Good stability, excellent optical and electrical properties. The visible light absorption rate of monoatomic layer graphene is only 2.3%, and the theoretical surface resistance is 20Ω -1 . Indium tin oxide transparent conductive film (ITO) is widely used in solar cells, touch scre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26
Inventor 赵士超吕燕飞刘海涛霍德璇季振国
Owner HAIAN MINGHUI METAL MATERIAL