Manufacturing method of flexible electronic device

A technology of flexible electronic devices and manufacturing methods, which is applied in the direction of electric solid devices, discharge tube/lamp manufacturing, semiconductor/solid device manufacturing, etc., can solve problems such as device failure, difficulty in maintaining a flat shape, and rupture of inorganic thin film materials, and achieve Effects of low thermal expansion coefficient, small surface roughness, and high transition temperature

Active Publication Date: 2012-03-21
SUN YAT SEN UNIV
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Problems solved by technology

[0003] At present, the industry mainly adopts the casting method to realize the mass production of organic thin films, but the surface roughness of the organic thin films obtained by the casting method is relatively large, so the electronic devices fabricated on the surface have a high probability of electric leakage breakdown, and the device array poor uniformity
In order to reduce the surface roughness of the organic substrate, it is often necessary to coat a layer of organic thin film on the surface to make the surface flat, which will increase the complexity of the device process
In addition, the thermal expansion coefficient of the organic substrate is generally greater than that of the inorganic thin film. In the manufacturing process of electronic devices, part of the manufacturing process needs to be carried out at a higher temperature, which will cause the inorganic thin film material in the electronic device to crack and cause device failure.
The thickness of organic thin films is usually small, generally only tens of microns, and the texture is soft, so it is difficult to maintain a fixed flat shape during use, which brings difficulties to the production of electronic devices

Method used

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  • Manufacturing method of flexible electronic device
  • Manufacturing method of flexible electronic device
  • Manufacturing method of flexible electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Fabrication of flexible amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT), the specific process is as follows:

[0025] like figure 1 As shown in (a), a glass substrate 1 coated with an indium tin oxide (ITO) film is used as a substrate coated with a polyimide film. The prepared polyamic acid solution was evenly scraped on the surface of the ITO glass substrate, and then the sample was placed in a vacuum oven for baking. Oven heating conditions: from room temperature to 130°C for 1 hour, heat preservation for 0.1 hour; then heat up for 0.2 hours to 190°C, heat preservation for 0.1 hour; 0.2 hours. After the reaction, a polyimide film 2 containing a thioether structure is obtained on the surface of the ITO glass.

[0026] like figure 1 As shown in (b), a layer of silicon nitride film 3 with a thickness of 200nm is deposited on the surface of the polyimide film with a sulfide structure by using plasma chemical enhanced deposition technology (PECV...

Embodiment 2

[0040] Preparation of flexible zinc oxide (ZnO) nanowire cold cathode, the specific process is as follows:

[0041] like image 3 As shown in (a), a glass substrate 11 coated with indium tin oxide (ITO) is used as the substrate for coating the polyimide film. The prepared polyamic acid solution was evenly scraped on the surface of the ITO glass substrate, and then the sample was placed in a vacuum oven for baking. Oven heating conditions: from room temperature to 130°C for 1 hour, heat preservation for 0.1 hour; then heat up for 0.2 hours to 190°C, heat preservation for 0.1 hour; 0.2 hours. After the reaction, a polyimide film 12 containing a thioether structure is obtained on the surface of the ITO glass.

[0042] like image 3 As shown in (b), the silicon nitride (SiNx) film 13 (which can also be materials such as silicon dioxide or aluminum oxide) with a thickness of 200 nm is deposited on the surface of the polyimide film containing the sulfide structure by PECVD, and ...

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PUM

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Abstract

The invention discloses a manufacturing method of a flexible electronic device. The method comprises the following steps of: coating an organic solution on a hard substrate; baking under vacuum so that the organic solution is solidified to form an organic plastic film which has a smooth surface and is closely attached to the substrate; depositing an insulating film on the surface of the organic plastic film, and manufacturing electronic components; and separating the films from the substrate to obtain the flexible electronic device. The formation of the smooth and closely-attached organic film can reduce the problems of deformation and thermal expansion caused by that the organic film wrinkles and does not match with the stress of the electronic devices during the manufacturing process of the device, so that the flexible electronic device and an array thereof have uniform geometric dimensions and stable performances. The method can be applied to manufacture flexible flat-panel display devices, flexible sensing devices and flexible field electron emission cold cathodes.

Description

technical field [0001] The invention relates to the field of manufacturing electronic devices, in particular to a method capable of manufacturing electronic devices on the surface of a flexible organic plastic film. technical background [0002] Electronic devices and their arrays fabricated on flexible substrates are called flexible electronic devices. Due to the bendable and extensible properties of flexible electronic devices, they have broad application prospects in the field of information technology. Its potential applications include flexible flat panel displays, flexible sensors, flexible nanodevices, etc. At present, the flexible substrates that can be used to manufacture flexible electronic devices mainly include organic thin films, ultra-thin glass and metal foils. Compared with ultra-thin glass and metal foils, organic thin films have the advantages of good toughness, high light transmission and low production cost, so organic thin films have attracted extensiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H01J9/02B82Y40/00
Inventor 佘峻聪祝伟邓少芝许宁生张艺许家瑞林文璇陈军
Owner SUN YAT SEN UNIV
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